公开(公告)号：US5592259A

公开(公告)日：1997-01-07

申请号：US573760

申请日：1995-12-18

申请人： Satoru Anzai ,  Masaya Komatsu

发明人： Satoru Anzai ,  Masaya Komatsu

IPC分类号： G03F7/20 ,  G03B27/52

CPC分类号： G03F7/703 ,  G03F7/70241

摘要： A photomask is provided having a stepped portion formed on at least one of a first and second areas corresponding to a stepped structure within an exposure area on the sensitive substrate onto which the pattern is to be exposed to make different height positions of the first and second areas of the pattern forming surface of the transparent substrate in the optical axis direction of the projection optical system. Also provides is an exposure method involving the step of shifting an image forming surface of a projection optical system in an optical axis direction corresponding to a stepped structure of an exposure area on a sensitive substrate. The image forming surface of the projection optical system coincides with the exposure area surface when exposing the pattern on an original substrate onto the sensitive substrate through the projection optical system. A projection exposure apparatus is also provided including a projection optical system for projecting and forming an image of a pattern on the original substrate on the sensitive substrate, and a stage for retaining the sensitive substrate so that the surface of the sensitive substrate is disposed close to the image forming surface. The exposure apparatus also has an image surface compensating member for shifting the image forming surface in the optical axis direction corresponding to the stepped structure.

摘要翻译： 提供一种光掩模，其具有形成在与敏感基板上的曝光区域内的阶梯状结构对应的第一和第二区域中的至少一个上的阶梯部分，图案将暴露在其上以使第一和第二部分的不同高度位置 在投影光学系统的光轴方向上的透明基板的图案形成面的区域。 还提供了一种曝光方法，其涉及将投影光学系统的图像形成表面沿对应于敏感基板上的曝光区域的阶梯状结构的光轴方向移位的步骤。 当通过投影光学系统将原始基板上的图案曝光到敏感基板上时，投影光学系统的图像形成表面与曝光区域表面重合。 还提供了一种投影曝光装置，包括投影光学系统，用于在敏感基板上的原始基板上投射和形成图案的图像;以及台，用于保持敏感基板，使得敏感基板的表面设置成靠近 图像形成表面。 曝光装置还具有用于使图像形成面沿与阶梯状结构对应的光轴方向移动的图像面补偿部件。

公开(公告)号：US5461455A

公开(公告)日：1995-10-24

申请号：US110466

申请日：1993-08-23

申请人： Paul W. Coteus ,  Douglas S. Goodman

发明人： Paul W. Coteus ,  Douglas S. Goodman

IPC分类号： G03F7/20 ,  G03F7/24 ,  H01L21/027 ,  G03C5/00 ,  G03B27/42

CPC分类号： G03F7/703 ,  G03F7/24 ,  G03F7/70241

摘要： An image projection system for all surfaces of a three dimensional object such as a polyhedron in which direct and angle reflected image patterns are projected from superpositioned non-overlapping mask patterns mounted on different levels where the separation of the levels is related to the size of the object. The apparatus and process permits simultaneous photolithigraphic printing of conductors on the top and all sides of a cube shaped stack of integrated circuit chips.

摘要翻译： 用于三维物体（例如多面体）的所有表面的图像投影系统，其中直接和角度反射的图像图案从安装在不同层面上的叠加的非重叠掩模图案投影，其中水平的分离与 目的。 该设备和工艺允许在集成电路芯片的立方体堆叠的顶部和所有侧面上的导体的同时光刻印刷。

公开(公告)号：US5456798A

公开(公告)日：1995-10-10

申请号：US354775

申请日：1994-12-12

申请人： Tukasa Koumura ,  Kiyoshi Saeki

发明人： Tukasa Koumura ,  Kiyoshi Saeki

IPC分类号： G02B27/46 ,  B81C99/00 ,  G02B3/00 ,  G03F1/00 ,  G03F7/20 ,  H01L21/30 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00

CPC分类号： G02B3/00 ,  G03F7/703 ,  G03F7/70416

摘要： In order to perform micromachining of a precision smooth curved surface on a workpiece, light emitted from a mercury lamp is transmitted through a photomask, Fourier transform lens, aperture material, and inverse Fourier transform lens, after which it is beamed upon the workpiece material to be surface-machined and a positive photoresist layer which is formed on the surface of the workpiece material. By means of the foregoing structure, the high-frequency optical components which are included in the light emitted from the mercury lamp and which may cause roughening of curved-surface machining are made to converge at a location away from the optical axis and are removed by means of an aperture provided thereupon, with the only the residual low-frequency optical components being transmitted through the aperture, and so the intensity profile of the light which is beamed upon the positive photoresist layer is smoothed and a smooth-surface curved surface is transcribed to the positive photoresist layer.

摘要翻译： 为了在工件上进行精密光滑曲面的微机械加工，从水银灯发出的光通过光掩模，傅立叶变换透镜，孔径材料和傅立叶逆变换透镜传输，然后将其发射到工件材料上 被表面加工和形成在工件材料表面上的正性光致抗蚀剂层。 通过上述结构，将包含在从汞灯发出的光中并且可能导致曲面加工的粗糙化的高频光学部件在远离光轴的位置处会聚，并且被除去 设置在其上的孔的装置，只剩余的低频光学部件通过孔径传播，因此光束在正性光致抗蚀剂层上的光的强度分布被平滑化并且光滑表面曲面被转录 到正性光致抗蚀剂层。

公开(公告)号：US5184176A

公开(公告)日：1993-02-02

申请号：US769445

申请日：1991-10-01

申请人： Yasuyuki Unno ,  Seiji Orii ,  Masami Yonekawa

发明人： Yasuyuki Unno ,  Seiji Orii ,  Masami Yonekawa

IPC分类号： G03F7/20 ,  G03F7/207

CPC分类号： G03F7/70708 ,  G03F7/70258 ,  G03F7/703 ,  G03F7/707 ,  G03F7/70875 ,  G03F7/70883 ,  G03F7/70891

摘要： A projective exposure apparatus for imaging a pattern formed on an original onto a substrate at a predetermined magnification to form a pattern image on the substrate includes an original support member, a substrate support member, and a projection lens disposed between these support members for imaging the pattern onto the substrate. In the projection exposure apparatus, a partial deviation of positions of portions of the pattern image from regular positions are obtained in at least one of the directions along and perpendicular to a surface of the pattern image, and the partial deviation is eliminated by deforming at least one of the original and the substrate based on the thus obtained result.

公开(公告)号：US5094536A

公开(公告)日：1992-03-10

申请号：US609816

申请日：1990-11-05

申请人： Bruce G. MacDonald ,  Robert O. Hunter, Jr. ,  Adlai H. Smith

发明人： Bruce G. MacDonald ,  Robert O. Hunter, Jr. ,  Adlai H. Smith

IPC分类号： B23Q1/03 ,  G03F7/20 ,  H01L21/00 ,  H01L21/68 ,  H01L21/687

CPC分类号： H01L21/67288 ,  B23Q1/032 ,  G03F7/703 ,  G03F7/707 ,  H01L21/681 ,  H01L21/6875

摘要： The deformable wafter chuck system includes a base with a recess having a diameter slightly smaller than the diameter of the wafer to be held. The base may have one or more orifices or channels running therethrough for distributing a vacuum to secure the wafer to the chuck, or it may have a plurality of clips attached at the rim of the chuck for holding the wafer. Attached to the chuck within the recess is a plurality of distortive actuators, such as piezoelectric crystals, which cause the wafer to be selectively deformed to assume arbitrary shapes, cancelling the warpage of the wafer to permit reduced distortion of the projected pattern. An interferometer system is included to combine light reflected from the wafer surface with a portion of incoming light modulated by a mask or reticle, thereby forming an interference pattern. The interference pattern is sued by a computer to determine warpage-induced distortions to activate the actuators to provide realtime correction of wafer flatness and also permits adjustment of depth of focus by varying heights of portions of the wafer.

摘要翻译： 可变形的夹头卡盘系统包括具有凹部的基部，凹部的直径略小于要保持的晶片的直径。 底座可以具有一个或多个穿过其中的孔或通道，用于分配真空以将晶片固定到卡盘，或者其可以具有附接在卡盘的边缘处的多个夹子用于保持晶片。 在凹部内的卡盘附近是多个变形致动器，例如压电晶体，其使得晶片选择性地变形成任意形状，消除了晶片的翘曲，从而减小了投影图案的变形。 包括干涉仪系统以将从晶片表面反射的光与由掩模或掩模版调制的入射光的一部分组合，从而形成干涉图案。 干扰图案由计算机起诉以确定翘曲引起的失真以激活致动器以提供晶片平坦度的实时校正，并且还允许通过改变晶片部分的高度来调节焦深。

公开(公告)号：US4688932A

公开(公告)日：1987-08-25

申请号：US827015

申请日：1986-02-07

申请人： Akiyoshi Suzuki

发明人： Akiyoshi Suzuki

IPC分类号： G03F7/20 ,  G03B27/48 ,  G03B27/50 ,  G03B27/70

CPC分类号： G03F7/70075 ,  G03F7/703 ,  G03F7/70358 ,  G03F7/70366

摘要： An exposure apparatus for use in the manufacture of semiconductor devices, for transferring an integrated circuit pattern of a reticle onto a semiconductor wafer by use of a projection lens optical system. A portion of the pattern of the reticle is irradiated with a light beam, and the light beam is scanningly deflected so that the whole of the pattern of the reticle is scanned with the light beam, whereby the pattern of the reticle is transferred onto the wafer. For compensation of a curvature of field of the projection lens optical system, the wafer is displaced in the direction of an optical axis of the projection lens optical system in accordance with the position of scan, on the reticle, whereby a high resolving power is assured over the entire surface of the reticle pattern. This allows enlargement of the pattern area of the reticle.

摘要翻译： 一种用于制造半导体器件的曝光装置，用于通过使用投影透镜光学系统将掩模版的集成电路图案转印到半导体晶片上。 掩模版的图案的一部分用光束照射，并且光束被扫描偏转，从而以光束扫描掩模版的整体图案，由此将掩模版的图案转印到晶片上 。 为了补偿投影透镜光学系统的曲率，晶片根据扫描位置在投影透镜光学系统的光轴方向上位于光罩上，由此确保高分辨能力 在标线图案的整个表面上。 这样可以扩大掩模版的图案区域。

公开(公告)号：US09568838B2

公开(公告)日：2017-02-14

申请号：US14967448

申请日：2015-12-14

申请人： CARL ZEISS SMT GmbH

发明人： Bernd Geh

IPC分类号： G03B27/42 ,  G03F7/20

CPC分类号： G03F7/702 ,  G03F7/703 ,  G03F7/70783

摘要： A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured in such a way that a defined image field curvature of the projection objective is set in such a way that an object surface that is curved convexly with respect to the projection objective can be imaged into a planar image surface. What can be achieved given a suitable setting of the object surface curvature is that a gravitation-dictated bending of a mask does not have a disturbing effect on the imaging quality.

摘要翻译： 用于将布置在投影物体的物体表面中的图案成像成具有缩小成像刻度的投影物镜的图像表面的投影物镜具有沿着投影物镜的光轴布置的多个光学元件， 使得投影物镜的定义的图像场曲率被设置为使得相对于投影物体凸出地弯曲的物体表面可以被成像为平面图像表面的方式。 给定对象表面曲率的适当设置可以实现什么是掩模的重力指定弯曲对成像质量没有干扰的影响。

公开(公告)号：US20160306272A1

公开(公告)日：2016-10-20

申请号：US15194072

申请日：2016-06-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yen-Cheng Lu ,  Jeng-Horng Chen ,  Shinn-Sheng Yu ,  Anthony Yen

IPC分类号： G03F1/24 ,  G03F7/20

CPC分类号： G03F7/70283 ,  G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F7/2004 ,  G03F7/70091 ,  G03F7/70158 ,  G03F7/703

摘要： An extreme ultraviolet lithography (EUVL) system is disclosed. The system includes an extreme ultraviolet (EUV) mask with three states having respective reflection coefficient is r1, r2 and r3, wherein r3 is a pre-specified value that is a function of r1 and r2. The system also includes a nearly on-axis illumination (ONI) with partial coherence a less than 0.3 to expose the EUV mask to produce diffracted light and non-diffracted light. The system further includes a projection optics box (PUB) to remove a portion of the non-diffracted light and to collect and direct the diffracted light and the remaining non-diffracted light to expose a target.

摘要翻译： 公开了一种极紫外光刻（EUVL）系统。 该系统包括具有各自反射系数的三种状态的极紫外（EUV）掩模为r1，r2和r3，其中r3是作为r1和r2的函数的预定值。 该系统还包括具有小于0.3的部分相干性的近轴上照明（ONI），以暴露EUV掩模以产生衍射光和非衍射光。 该系统还包括用于去除非衍射光的一部分并且收集并引导衍射光和剩余的非衍射光以暴露目标的投影光学盒（PUB）。

公开(公告)号：US09383195B2

公开(公告)日：2016-07-05

申请号：US12741733

申请日：2008-11-03

申请人： Wilhelmus Johannes Maria De Laat ,  Cheng-Qun Gui ,  Peter Theodorus Maria Giesen ,  Marcus Theodoor Wilhelmus Van Der Heijden ,  Erwin Rinaldo Meinders ,  Mária Péter

发明人： Wilhelmus Johannes Maria De Laat ,  Cheng-Qun Gui ,  Peter Theodorus Maria Giesen ,  Marcus Theodoor Wilhelmus Van Der Heijden ,  Erwin Rinaldo Meinders ,  Mária Péter

IPC分类号： G03F7/20 ,  G01B11/30 ,  G01N21/956

CPC分类号： G01B11/306 ,  G01N2021/95676 ,  G03F7/703 ,  G03F7/70783 ,  G03F7/7085

摘要： A method of obtaining information indicative of the topography of a surface of a flexible substrate, the method including directing a beam of radiation at the surface of the flexible substrate; and detecting changes in intensity distribution, or angle of reflection, of the beam of radiation after the beam of radiation has been reflected from the surface of the substrate to obtain information indicative of the topography of the surface of the flexible substrate.

摘要翻译： 一种获得指示柔性基板的表面的形貌的信息的方法，所述方法包括在柔性基板的表面处引导辐射束; 并且检测在辐射束之后的辐射束的强度分布或反射角度的变化已经从衬底的表面反射，以获得指示柔性衬底的表面的形貌的信息。

公开(公告)号：US09261792B2

公开(公告)日：2016-02-16

申请号：US14341443

申请日：2014-07-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Hsuan Liu ,  Jen-Pan Wang

IPC分类号： G03F7/20 ,  G03F1/52 ,  G03F1/24

CPC分类号： G03F1/52 ,  G03F1/24 ,  G03F1/50 ,  G03F1/76 ,  G03F7/70058 ,  G03F7/70283 ,  G03F7/703

摘要： Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.

摘要翻译： 公开了各种非平面反射光刻掩模，使用这种光刻掩模的系统和方法。 一个实施例是包括透明基板，反射材料和掩模版图案的光刻掩模。 透明基板包括弯曲表面。 反射材料与透明基板的弯曲表面相邻，并且反射材料和透明基板之间的界面是反射表面。 标线图案位于透明基板的第二表面上。 标线图案的反射率小于反射材料的反射率。 公开了形成类似光刻掩模和使用类似光刻掩模的方法。