Abstract:
The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.
Abstract:
An optical system for a lithography machine includes: a main mirror element and a manipulator device for positioning and/or orienting said main mirror element. The optical system also includes an optically active surface for reflecting radiation. The optical system further includes an actuator matrix positioned between the main mirror element and the optically active surface. The actuator matrix is configured to deform the optically active surface to influence the reflective properties of the optically active surface. A gap is present between the actuator matrix and a front side of the main mirror element so that the actuator matrix is spaced apart from the main mirror element.
Abstract:
A method for generating a predetermined three-dimensional contour of a component and/or a wafer comprises: (a) determining a deviation of an existing three-dimensional contour of the component and/or the wafer from the predetermined three-dimensional contour; (b) calculating at least one three-dimensional arrangement of laser pulses having one or more parameter sets defining the laser pulses for correcting the determined existing deviation of the three-dimensional contour from the predetermined three-dimensional contour; and (c) applying the calculated at least one three-dimensional arrangement of laser pulses on the component and/or the wafer for generating the predetermined three-dimensional contour.
Abstract:
The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.
Abstract:
An optical system for a lithography machine includes: a main mirror element and a manipulator device for positioning and/or orienting said main mirror element. The optical system also includes an optically active surface for reflecting radiation. The optical system further includes an actuator matrix positioned between the main mirror element and the optically active surface. The actuator matrix is configured to deform the optically active surface to influence the reflective properties of the optically active surface. A gap is present between the actuator matrix and a front side of the main mirror element so that the actuator matrix is spaced apart from the main mirror element.
Abstract:
A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured in such a way that a defined image field curvature of the projection objective is set in such a way that an object surface that is curved convexly with respect to the projection objective can be imaged into a planar image surface. What can be achieved given a suitable setting of the object surface curvature is that a gravitation-dictated bending of a mask does not have a disturbing effect on the imaging quality.
Abstract:
A method for generating a predetermined three-dimensional contour of a component and/or a wafer comprises: (a) determining a deviation of an existing three-dimensional contour of the component and/or the wafer from the predetermined three-dimensional contour; (b) calculating at least one three-dimensional arrangement of laser pulses having one or more parameter sets defining the laser pulses for correcting the determined existing deviation of the three-dimensional contour from the predetermined three-dimensional contour; and (c) applying the calculated at least one three-dimensional arrangement of laser pulses on the component and/or the wafer for generating the predetermined three-dimensional contour.