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    METHOD FOR CORRECTING ERRORS IN PHOTOLITHOGRAPHIC MASKS WHILE AVOIDING DAMAGE TO REAR-SIDE COATINGS
    1.
    发明公开
    METHOD FOR CORRECTING ERRORS IN PHOTOLITHOGRAPHIC MASKS WHILE AVOIDING DAMAGE TO REAR-SIDE COATINGS 审中-公开

    公开(公告)号：US20240280892A1

    公开(公告)日：2024-08-22

    申请号：US18443486

    申请日：2024-02-16

    Applicant: Carl Zeiss SMS Ltd.

    Inventor： Vladimir Dmitriev ,  Avi Cohen ,  Kujan Gorhad ,  Hani Zeidan

    IPC: G03F1/36 ,  G03F1/72 ,  G03F7/00

    CPC classification number: G03F1/36 ,  G03F1/72 ,  G03F7/70508

    Abstract: The present invention relates to a method for correcting placement errors in a photolithographic mask comprising a substrate and structures formed on the substrate, the method involving at least one local density change, preferably a plurality of local density changes, each of which defines a pixel, being introduced into the substrate by use of a laser beam in order to correct placement errors of the structures, wherein in an examination step, an incidence surface of the mask, via which the laser beam radiates into the substrate, is examined for contaminations and, in regions in which a contamination of the incidence surface has been ascertained in the examination step, no laser irradiation or a laser irradiation with at least one changed laser beam parameter takes place, the laser beam parameter(s) being changed such that no damage to the incidence surface or near-surface regions occurs in the case of an interaction between laser beam and contamination.

    Method and apparatus for compensating defects of a mask blank
    3.
    发明授权
    Method and apparatus for compensating defects of a mask blank 有权

    公开(公告)号：US11385539B2

    公开(公告)日：2022-07-12

    申请号：US16747818

    申请日：2020-01-21

    Applicant: Carl Zeiss SMS Ltd.

    Inventor： Joachim Welte

    IPC: G03F1/84 ,  G01N21/88 ,  G01N21/95 ,  G03F7/20 ,  G06T7/00

    Abstract: Method for compensating at least one defect of a mask blank, wherein the method includes the following steps: (a) obtaining data in respect of a position of the at least one defect of the mask blank; (b) obtaining design data for pattern elements which should be produced on the mask blank; (c) determining whether the at least one defect is arranged relative to a pattern element to be produced in such a way that it has substantially no effect when exposing a wafer using the mask blank that is provided with the pattern element to be produced; and (d) otherwise, displacing the at least one defect on the mask blank in such a way that it has substantially no effect when exposing the wafer using the mask blank that is provided with the pattern element to be produced.

    SURFACE DEFECT REPAIR BY IRRADIATION
    8.
    发明申请
    SURFACE DEFECT REPAIR BY IRRADIATION 有权
    表面缺损修复由辐射

    公开(公告)号：US20160004151A1

    公开(公告)日：2016-01-07

    申请号：US14767263

    申请日：2014-02-17

    Applicant: CARL ZEISS SMS LTD

    Inventor： Sergey Oshemkov

    IPC: G03F1/72

    CPC classification number: G03F1/72 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

    Abstract: A method for repairing a defect on a substrate surface includes placing on the defect a nanoparticle that includes a conductive material. A region of the substrate surface in which the nanoparticle is placed is irradiated, the region being larger than the nanoparticle. An energy density of the irradiation is below a modification threshold for the substrate surface.

    Abstract translation: 用于修复衬底表面上的缺陷的方法包括在缺陷上放置包括导电材料的纳米颗粒。 照射放置纳米颗粒的基板表面的区域，该区域大于纳米颗粒。 照射的能量密度低于衬底表面的修改阈值。

    ML REFLECTIVITY MODIFICATION
    9.
    发明申请
    ML REFLECTIVITY MODIFICATION 有权

    公开(公告)号：US20240402591A1

    公开(公告)日：2024-12-05

    申请号：US18731149

    申请日：2024-05-31

    Applicant: Carl Zeiss SMS Ltd.

    Inventor： Vladimir Dmitriev ,  Sergey Oshemkov ,  Alexander Gusarov ,  Avi Cohen

    IPC: G03F1/74 ,  G03F1/24

    Abstract: The present disclosure relates to a method for correcting a reflective lithography mask, wherein the mask comprises a substrate and a reflective multilayer stack, the method comprising: applying a first electromagnetic radiation to the mask to evoke a first material change within the mask which modifies a reflectivity of the mask. The present disclosure further relates to an apparatus for correcting a reflective lithography mask and a reflective lithography mask.

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