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31.发明授权公开(公告)号：US09557636B2
公开(公告)日：2017-01-31
申请号：US14479411
申请日：2014-09-08
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
摘要： A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
摘要翻译： 公开了一种掩模，其制造方法及其使用方法。 在一个示例中，掩模包括沉积在衬底上的衬底和反射多层涂层。 反射多层涂层通过定位基板而形成，使得在基板的法线和着陆在基板上的颗粒之间形成角度α，并使基板围绕与颗粒的着陆方向平行的轴线旋转。 在一个实例中，反射多层涂层包括沉积在第一层上的第一层和第二层。 反射多层涂层的相缺陷区域包括在第一位置处的第一层中的第一变形，以及在第二位置处的第二层中的第二变形，第二位置从第一位置横向移位。
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公开(公告)号：US09529272B2
公开(公告)日：2016-12-27
申请号：US14210652
申请日：2014-03-14
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
CPC分类号： G03F7/70091 , G03F1/22 , G03F7/70125 , G03F7/70283 , G03F7/70308 , G03F7/70325
摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. These different states of the EUV mask are assigned to adjacent polygons and adjacent assist polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights reflected from main polygons and reflected lights from assist polygons are removed. The diffracted lights and the not removed non-diffracted lights reflected from main polygons are collected and directed to expose a target by a projection optics box.
摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的这些不同状态被分配给相邻的多边形和相邻的辅助多边形。 EUV掩模由部分相干σ小于0.3的近轴上照明（ONI）曝光，产生衍射光和非衍射光。 从主多边形反射的大部分非衍射光和来自辅助多边形的反射光都被去除。 从主多边形反射的衍射光和未去除的非衍射光被收集并引导以通过投影光学盒露出靶。
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公开(公告)号：US09412647B2
公开(公告)日：2016-08-09
申请号：US14024103
申请日：2013-09-11
发明人： Yen-Cheng Lu , Chih-Tsung Shih , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： H01L21/76 , H01L23/52 , H01L21/768 , H01L21/033 , H01L21/311
CPC分类号： H01L21/76811 , H01L21/0337 , H01L21/31111 , H01L21/31122 , H01L21/31144 , H01L21/76816 , H01L2924/0002 , H01L2924/00
摘要： A method includes defining a metal pattern layer over a first dielectric layer. The first dielectric layer is disposed over an etch stop layer and the etch stop layer is disposed over a second dielectric layer. A spacer layer is grown over the metal pattern layer and the first dielectric layer. A metal trench is formed with a metal width in the first dielectric layer. A via hole is formed with a via width in the second dielectric layer.
摘要翻译： 一种方法包括在第一电介质层上界定金属图案层。 第一介电层设置在蚀刻停止层上，并且蚀刻停止层设置在第二介电层上。 间隔层生长在金属图案层和第一介电层上。 在第一电介质层中形成有金属宽度的金属沟槽。 在第二电介质层中形成通孔宽度。
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公开(公告)号：US09285671B2
公开(公告)日：2016-03-15
申请号：US14152680
申请日：2014-01-10
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A mask, or photomask, is used in lithography systems and processes. The mask includes a first polygon of a first state and a second polygon of a second state. The mask also includes a field of the first state and a third polygon of the second state, and in the field. The first and second states are different, and the first and second polygons are located outside of the field.
摘要翻译： 掩模或光掩模用于光刻系统和工艺。 掩模包括第一状态的第一多边形和第二状态的第二多边形。 掩模还包括第一状态的场和第二状态的第三多边形，以及场中。 第一和第二状态是不同的，并且第一和第二多边形位于场外。
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35.发明授权Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity 有权极紫外光刻工艺和掩膜，减少阴影效果和增强强度公开(公告)号：US09261774B2
公开(公告)日：2016-02-16
申请号：US14221555
申请日：2014-03-21
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
CPC分类号： G03F1/24 , G03F1/22 , G03F1/26 , G03F1/36 , G03F1/76 , G03F7/2002 , G03F7/2004
摘要： The present disclosure provides one embodiment of an extreme ultraviolet (EUV) mask. The EUV mask includes a first state and a second state different from each other; a first main polygon and a second main polygon adjacent to the first main polygon; a plurality of sub-resolution assist polygons; and a field. Each of the first and second main polygons, the sub-resolution assist polygons, and the field has an associated state. The state assigned to the first main polygon is different from the state assigned to the second main polygon. The plurality of assist polygons are assigned a same state, which is different from a state assigned to the field.
摘要翻译： 本公开提供了一种极紫外（EUV）掩模的实施方案。 EUV掩模包括彼此不同的第一状态和第二状态; 与第一主多边形相邻的第一主多边形和第二主多边形; 多个分解辅助多边形; 和一个领域。 第一和第二主多边形，子分辨率辅助多边形和场中的每一个具有相关联的状态。 分配给第一主多边形的状态与分配给第二主多边形的状态不同。 多个辅助多边形被分配与分配给该场的状态不同的相同状态。
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公开(公告)号：US09229326B2
公开(公告)日：2016-01-05
申请号：US14212708
申请日：2014-03-14
发明人： Yen-Cheng Lu , Shu-Hao Chang , Shinn-Sheng Yu , Jui-Ching Wu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F7/20 , H01L21/311 , H01L21/268
CPC分类号： G03F7/20 , G03F7/40 , H01L21/0332 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/31058 , H01L21/31138 , H01L21/31144 , H01L21/76816 , H01L29/66795
摘要： Provided is a method of forming a pattern for an integrated circuit. The method includes forming a first layer over a substrate, wherein the first layer's etch rate is sensitive to a radiation, such as an extreme ultraviolet (EUV) radiation or an electron beam (e-beam). The method further includes forming a resist layer over the first layer and exposing the resist layer to the radiation for patterning. During the exposure, various portions of the first layer change their etch rate in response to an energy dose of the radiation received therein. The method further includes developing the resist layer, etching the first layer, and etching the substrate to form a pattern. The radiation-sensitivity of the first layer serves to reduce critical dimension variance of the pattern.
摘要翻译： 提供一种形成集成电路图案的方法。 该方法包括在衬底上形成第一层，其中第一层的蚀刻速率对诸如极紫外（EUV）辐射或电子束（e-beam）的辐射敏感。 该方法还包括在第一层上形成抗蚀剂层，并将抗蚀剂层暴露于用于图案化的辐射。 在曝光期间，响应于其中接收的辐射的能量剂量，第一层的各个部分改变其蚀刻速率。 该方法还包括显影抗蚀剂层，蚀刻第一层，以及蚀刻基板以形成图案。 第一层的辐射敏感性用于减小图案的临界尺寸变化。
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公开(公告)号：US09146459B2
公开(公告)日：2015-09-29
申请号：US14087508
申请日：2013-11-22
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
CPC分类号： G03F1/24 , G03F1/48 , G03F1/52 , G03F7/2002 , G03F7/2022 , G03F7/70466 , G03F7/70625 , G03F7/70941
摘要： A low EUV reflectivity mask includes a low thermal expansion material (LTEM) layer, a low EUV reflectivity (LEUVR) multilayer over the LTEM layer in a first region, a high EUV reflectivity (HEUVR) multilayer over the LTEM layer in a second region and a patterned absorption layer over the LEUVR multilayer and the HEUVR multilayer.
摘要翻译： 低EUV反射率掩模包括第一区域中的LTEM层上的低热膨胀材料（LTEM）层，低EUV反射率（LEUVR）多层，在第二区域中的LTEM层上的高EUV反射率（HEUVR）多层，以及 在LEUVR多层和HEUVR多层上的图案化吸收层。
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公开(公告)号：US09116435B2
公开(公告)日：2015-08-25
申请号：US14491560
申请日：2014-09-19
发明人： Shinn-Sheng Yu , Yen-Cheng Lu , Anthony Yen
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/48 , G03F1/58 , G03F7/7015 , G03F7/70191
摘要： An EUV mask includes a low thermal expansion material (LTEM) substrate, a reflective multilayer (ML) above one surface of the LTEM substrate, and a conductive layer above an opposite surface of the LTEM substrate. A capping layer is provided above the reflective ML, a buffer layer is provided above the capping layer, and an absorption stack is provided above the buffer layer. The absorption stack comprises multiple layers. A multiple patterning process is performed on the absorption stack to form multiple reflective states.
摘要翻译： EUV掩模包括在LTEM基板的一个表面上方的低热膨胀材料（LTEM）基板，反射多层（ML）以及在LTEM基板的相对表面上方的导电层。 在反射ML上方设置覆盖层，在覆盖层上设置缓冲层，在缓冲层上设置吸收层。 吸收层包括多层。 对吸收堆叠进行多重图案化处理以形成多个反射状态。
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39.发明授权公开(公告)号：US09091947B2
公开(公告)日：2015-07-28
申请号：US13946741
申请日：2013-07-19
发明人： Yen-Cheng Lu , Chih-Tsung Shih , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
摘要： Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A removing process is provided to form an absorber with a top surface lower than a top surface of the capping layer.
摘要翻译： 提供EUV光掩模的实施例和形成EUV光掩模的方法。 该方法包括提供衬底，反射层，覆盖层，硬掩模层，以及在其中形成开口。 然后将吸收层填充在硬掩模层的开口中和上表面上。 提供去除方法以形成具有比顶盖表面的顶表面低的顶表面的吸收体。
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40.发明申请公开(公告)号：US20150116685A1
公开(公告)日：2015-04-30
申请号：US14289474
申请日：2014-05-28
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , G03F1/0046 , G03F1/24 , G03F1/26 , G03F7/70091 , G03F7/70116 , G03F7/70125 , G03F7/70283 , G03F7/70308
摘要： The present disclosure provides a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a binary phase mask (BPM) to a lithography system, wherein the BPM includes two phase states and defines an integrated circuit (IC) pattern thereon; setting an illuminator of the lithography system in an illumination mode according to the IC pattern; configuring a pupil filter in the lithography system according to the illumination mode; and performing a lithography exposure process to a target with the BPM and the pupil filter by the lithography system in the illumination mode.
摘要翻译： 本公开提供了一种用于极紫外光刻（EUVL）方法。 该方法包括将二进制相位掩模（BPM）加载到光刻系统，其中BPM包括两个相位状态并且在其上限定集成电路（IC）图案; 根据IC图案在照明模式下设置光刻系统的照明器; 根据照明模式在光刻系统中配置光瞳滤光器; 以及在照明模式下通过光刻系统对BPM和瞳孔滤光器进行光刻曝光处理。
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