公开(公告)号：US09847478B2

公开(公告)日：2017-12-19

申请号：US13416183

申请日：2012-03-09

申请人： Ting-Chang Chang ,  Yong-En Syu ,  Fu-Yen Jian ,  Shih-Chieh Chang ,  Ying-Lang Wang

发明人： Ting-Chang Chang ,  Yong-En Syu ,  Fu-Yen Jian ,  Shih-Chieh Chang ,  Ying-Lang Wang

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/145 ,  H01L45/1608

摘要： Methods and apparatuses for a resistive random access memory (RRAM) device are disclosed. The RRAM device comprises a bottom electrode, a resistive switching layer disposed on the bottom electrode, and a top electrode disposed on the resistive switching layer. The resistive switching layer is made of a composite of a metal, Si, and O. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.

公开(公告)号：US09419155B2

公开(公告)日：2016-08-16

申请号：US13343922

申请日：2012-01-05

申请人： Shih-Chieh Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

发明人： Shih-Chieh Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

IPC分类号： H01L31/0232 ,  H01L31/101 ,  H01L31/18

CPC分类号： H01L31/0232 ,  H01L31/02327 ,  H01L31/101 ,  H01L31/18

摘要： This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 μm.

摘要翻译： 该描述涉及使用具有多个外延层的基板形成的感测产品。 至少第一外延层具有与第二外延层的组成不同的组成。 感测产品可选地包括第二外延层中的至少一个辐射感测元件以及可选地在第二外延层上的互连结构。 通过去除衬底和除第二外延层之外的所有外延层形成传感产物。 第二外延层的光入射表面具有小于约0.15μm的总厚度变化。

公开(公告)号：US08796851B2

公开(公告)日：2014-08-05

申请号：US13343940

申请日：2012-01-05

申请人： Chiang-Ming Chuang ,  Chun Che Huang ,  Shih-Chieh Chang

发明人： Chiang-Ming Chuang ,  Chun Che Huang ,  Shih-Chieh Chang

IPC分类号： H01L23/48

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/05124 ,  H01L2224/05186 ,  H01L2224/05624 ,  H01L2924/01013 ,  H01L2924/0132 ,  H01L2924/12042 ,  H01L2924/01029 ,  H01L2924/00

摘要： The description relates to a bonding pad for a semiconductor device deposited. The first region comprising aluminum deposited at a high temperature having a large grain size. The second region comprising aluminum deposited at a lower temperature having a smaller grain size.

摘要翻译： 该描述涉及沉积的用于半导体器件的焊盘。 第一区域包括在高温下沉积的具有大的晶粒尺寸的铝。 第二区域包括在较低温度下沉积的具有较小晶粒尺寸的铝。

公开(公告)号：US08759928B2

公开(公告)日：2014-06-24

申请号：US13439628

申请日：2012-04-04

申请人： Shih-Chieh Chang ,  Jian-Shin Tsai ,  Chih-Chang Huang ,  Ing-Ju Lee ,  Chi-Cheng Hung ,  Jun-Nan Nian ,  Chih-Chung Chang

发明人： Shih-Chieh Chang ,  Jian-Shin Tsai ,  Chih-Chang Huang ,  Ing-Ju Lee ,  Chi-Cheng Hung ,  Jun-Nan Nian ,  Chih-Chung Chang

IPC分类号： H01L31/02 ,  H01L27/14

CPC分类号： H01L31/1804 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/103 ,  Y02E10/547

摘要： A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.

摘要翻译： 提供了一种用于减少互补金属氧化物半导体背面照明图像传感器中的串扰的系统和方法。 一个实施例包括在金属化层的基板的相对侧上的像素区域周围形成网格。 栅格可以由诸如具有富含（110）的晶体取向的钨的材料形成。 该方向有助于防止在格栅图案化过程中发生的缺陷。

公开(公告)号：US08469644B2

公开(公告)日：2013-06-25

申请号：US13076004

申请日：2011-03-30

申请人： Shih-Chieh Chang

发明人： Shih-Chieh Chang

IPC分类号： F16B13/04

CPC分类号： B62K21/18

摘要： A stem fastening structure includes a cap, a bolt and a packing member. The cap abuts against a top of a stem and corresponds to a top edge of a middle hole of a front fork. The bolt passes through the cap and penetrates into the middle hole. The packing member has a loop portion for the bolt screwing therethrough. Two sides of the loop portion extend upward and diverge from the other to form two bottom cone portions. Two positioning portions respectively and vertically extend upward from the two positioning portioning. Two top cone portions respectively extend upward from the two positioning portions, and approach the other. A top of each top cone portions abuts against the cap. Thereby, when the bolt drives the loop portion to move toward the cap, the positioning portions abut against the middle hole, so that the stem is fastened to the front fork.

摘要翻译： 杆紧固结构包括盖，螺栓和填料构件。 帽子抵靠杆的顶部并且对应于前叉的中间孔的顶部边缘。 螺栓穿过盖子并穿透中孔。 包装件具有用于螺栓拧入其中的环部分。 环形部分的两侧向上延伸并且从另一侧分开形成两个底部锥形部分。 两个定位部分分别从两个定位分段向上垂直延伸。 两个顶锥部分别从两个定位部分向上延伸，并相互接近。 每个顶部锥形部分的顶部抵靠盖子。 因此，当螺栓驱动环部朝向盖移动时，定位部抵靠中间孔，使得杆固定在前叉上。

公开(公告)号：US20120248438A1

公开(公告)日：2012-10-04

申请号：US13236661

申请日：2011-09-20

申请人： Chiao-Ling Lung ,  Yu-Shih Su ,  Shih-Chieh Chang ,  Yiyu Shi

发明人： Chiao-Ling Lung ,  Yu-Shih Su ,  Shih-Chieh Chang ,  Yiyu Shi

IPC分类号： H01L23/58 ,  H01L21/66

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L2224/16146 ,  H01L2225/06544

摘要： A fault-tolerant unit and a fault-tolerant method for through-silicon via (TSV) are provided. The fault-tolerant unit includes TSV structures TSV1˜TSVn, nodes N11˜N1n, nodes N21˜N2n and a switching module. The TSV structure TSVi is connected between the node N11 of the first chip and the node N2i of the second chip, wherein 1≦i≦n. The switching module is connected between the nodes N21˜N2n of the second chip and a test path of the second chip. In normal operation state, the switching module disconnects the test path and the nodes N21˜N2n when the TSV structures TSV1˜TSVn are valid. The switching module connects the node N2i to at least another one of the nodes N21˜N2n when the TSV structure TSVi is faulty in the normal operation state. In test status, the switching module connects the test path to the nodes N21˜N2n.

摘要翻译： 提供了一种容错单元和通过硅通孔（TSV）的容错方法。 容错单元包括TSV结构TSV1〜TSVn，节点N11〜N1n，节点N21〜Nn以及交换模块。 TSV结构TSVi连接在第一芯片的节点N11和第二芯片的节点N2i之间，其中1＆nlE; i＆nlE; n。 切换模块连接在第二芯片的节点N21〜Nn2和第二芯片的测试路径之间。 在正常工作状态下，当TSV结构TSV1〜TSVn有效时，切换模块断开测试路径和节点N21〜N2。 当TSV结构TSVi在正常操作状态下故障时，切换模块将节点N2i连接到节点N21〜Nnn中的至少另一个。 在测试状态下，交换模块将测试路径连接到节点N21〜N2n。

公开(公告)号：US08247322B2

公开(公告)日：2012-08-21

申请号：US11680981

申请日：2007-03-01

申请人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen ,  Jung-Chih Tsao ,  Yu-Sheng Wang

发明人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen ,  Jung-Chih Tsao ,  Yu-Sheng Wang

IPC分类号： H01L21/44

CPC分类号： H01L21/76831 ,  H01L21/7684

摘要： A method for forming a semiconductor structure includes forming a dielectric layer over a substrate. A first non-conductive barrier layer is formed over the dielectric layer. At least one opening is formed through the first non-conductive barrier layer and within the dielectric layer. A second non-conductive barrier layer is formed over the first non-conductive barrier layer and within the opening. At least a portion of the second non-conductive barrier layer is removed, thereby at least partially exposing a top surface of the first non-conductive barrier layer and a bottom surface of the opening, with the second non-conductive barrier layer remaining on sidewalls of the opening. A seed layer and conductive layer is then formed and a single polishing operation removes the seed layer and conductive layer.

摘要翻译： 形成半导体结构的方法包括在衬底上形成电介质层。 在电介质层上形成第一非导电阻挡层。 通过第一非导电阻挡层和介电层内形成至少一个开口。 在第一非导电阻挡层上并在开口内形成第二非导电阻挡层。 去除第二非导电阻挡层的至少一部分，从而至少部分地暴露第一非导电阻挡层的顶表面和开口的底表面，而第二非导电阻挡层保留在侧壁上 的开幕。 然后形成种子层和导电层，并且单次抛光操作去除种子层和导电层。

公开(公告)号：US07803257B2

公开(公告)日：2010-09-28

申请号：US10971836

申请日：2004-10-22

申请人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen ,  Shih-Ho Lin ,  Chun-Chang Chen

发明人： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen ,  Shih-Ho Lin ,  Chun-Chang Chen

IPC分类号： C25D17/14 ,  C25D17/12

CPC分类号： H01L21/2885 ,  C25D17/001 ,  C25D17/12 ,  Y10T29/49208 ,  Y10T29/53204

摘要： A current-leveling electrode for improving electroplating and electrochemical polishing uniformity in the electrochemical plating or electropolishing of metals on a substrate is disclosed. The current-leveling electrode includes a base electrode and at least one sub-electrode carried by the base electrode. The at least one sub-electrode has a width which is less than a width of the base electrode to impart a generally tapered, stepped or convex configuration to the current-leveling electrode.

摘要翻译： 公开了一种用于改善电化学电镀中的电镀和电化学抛光均匀性的电流调节电极或对基底上的金属的电解抛光。 电流调平电极包括基极和由基极承载的至少一个子电极。 所述至少一个子电极的宽度小于所述基极的宽度，以赋予所述电流调平电极大致锥形，阶梯形或凸形的构造。

公开(公告)号：US20080280063A1

公开(公告)日：2008-11-13

申请号：US11798202

申请日：2007-05-11

申请人： Shih-Chieh Chang

发明人： Shih-Chieh Chang

IPC分类号： B05D7/14

CPC分类号： C25D5/022 ,  C25D7/00

摘要： In a method of coloring patterns or texts on a surface of an aluminum alloy material, an insulating layer is formed on the surface of the aluminum alloy material, and then the patterns or texts, which are partially insulated and partially conductive, are formed by way of laser engraving. Next, the conductive portion of the patterns or texts is treated by way of electro-deposition coating so that a cladding layer having a color different from that of the aluminum alloy material may be formed on the patterns or texts, different colors may appear, and the flatness of the surface may be kept.

摘要翻译： 在铝合金材料的表面上着色图案或文字的方法中，在铝合金材料的表面上形成绝缘层，然后形成部分绝缘和部分导电的图案或文本 的激光雕刻。 接下来，通过电沉积涂层处理图形或文本的导电部分，使得可以在图案或文本上形成具有与铝合金材料不同的颜色的包覆层，可能出现不同的颜色，以及 可以保持表面的平坦度。

公开(公告)号：US20150193075A1

公开(公告)日：2015-07-09

申请号：US14250394

申请日：2014-04-11

申请人： Shih-Chieh Chang ,  Tsang-Chih Wu

发明人： Shih-Chieh Chang ,  Tsang-Chih Wu

IPC分类号： G06F3/041

CPC分类号： G06F3/0418

摘要： A touch apparatus and a touch method thereof are provided. At first, whether the touch apparatus is under the influence of the noise interference is determined according to a plurality of differences between a plurality of sensing values of adjacent touch sensing periods within a recent predetermined period. Then, a touch detection operating frequency of the touch apparatus is adjusted when the touch apparatus is under the influence of noise interference.

摘要翻译： 提供了一种触摸装置及其触摸方法。 首先，根据在最近的预定时间段内的相邻触摸感测周期的多个感测值之间的多个差异来确定触摸装置是否受到噪声干扰的影响。 然后，当触摸装置受到噪声干扰的影响时，调整触摸装置的触摸检测操作频率。