公开(公告)号：US10108451B2

公开(公告)日：2018-10-23

申请号：US15823460

申请日：2017-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjoo Park ,  Sehwan Park ,  Minjeong Kang ,  Jinhee Choi

IPC: G06F9/46 ,  G06F9/48 ,  G06F3/0483

Abstract: A method and an electronic device are provided in which, in response to a first user input, a stack of partially overlaid visual elements is displayed in response to the first user input. Each visual element corresponds to an application that is running in the electronic device and includes an index item representing the corresponding application. A second user input for selecting a visual element from the stack of partially overlaid visual elements is received through the touchscreen. An execution screen of an application corresponding to the selected visual element is displayed.

公开(公告)号：US20180047406A1

公开(公告)日：2018-02-15

申请号：US15797910

申请日：2017-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sehwan Park

IPC: G10L21/00 ,  H04M1/725 ,  G10L15/22 ,  H04W12/06

CPC classification number: G10L21/00 ,  G10L15/22 ,  G10L2015/223 ,  H04M1/7253 ,  H04M2250/74 ,  H04W12/003 ,  H04W12/00504 ,  H04W12/06

Abstract: A method of connecting a service between a device and at least one other device is provided. The method includes recording, by the device, a user voice input in a state where a voice command button has been input, outputting first information based on the recorded user voice when an input of the voice command button is cancelled, receiving, by the device, second information corresponding to the first information, recognizing a service type according to the first information and the second information, connecting the device to a subject device in an operation mode of the device determined according to the recognized service type, and performing a service with the connected subject device.

公开(公告)号：US20180046498A1

公开(公告)日：2018-02-15

申请号：US15790485

申请日：2017-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjoo PARK ,  Sehwan Park ,  Minjeong Kang ,  Jinhee Choi

IPC: G06F9/48 ,  G06F3/0483

Abstract: A method and an electronic device are provided in which, in response to a first user input, a stack of partially overlaid visual elements is displayed in response to the first user input. Each visual element corresponds to an application that is running in the electronic device and includes an index item representing the corresponding application. A second user input for selecting a visual element from the stack of partially overlaid visual elements is received through the touchscreen. An execution screen of an application corresponding to the selected visual element is displayed.

公开(公告)号：US20240020187A1

公开(公告)日：2024-01-18

申请号：US18374717

申请日：2023-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wandong KIM ,  Jinyoung Kim ,  Sehwan Park ,  Hyun Seo ,  Sangwan Nam

IPC: G06F11/07 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

CPC classification number: G06F11/0727 ,  G06F11/0757 ,  G06F11/076 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C11/56

Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.

公开(公告)号：US11862273B2

公开(公告)日：2024-01-02

申请号：US18068337

申请日：2022-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sehwan Park ,  Jinyoung Kim ,  Youngdeok Seo ,  Dongmin Shin ,  Joonsuc Jang ,  Sungmin Joe

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/18 ,  G11C16/10 ,  G11C29/12 ,  G11C16/26

CPC classification number: G11C29/42 ,  G11C16/102 ,  G11C16/26 ,  G11C29/12015 ,  G11C29/18 ,  G11C29/4401 ,  G11C2029/1202 ,  G11C2029/1204 ,  G11C2029/1802

Abstract: A storage device includes a nonvolatile memory device and a memory controller to control the nonvolatile memory device. The nonvolatile memory device includes a memory cell array. The memory cell array includes a normal cell region, a parity cell region and a redundancy cell region. First bit-lines are connected to the normal cell region and the parity cell region and second bit-lines are connected to the redundancy cell region. The memory controller includes an error correction code (ECC) engine to generate parity data. The memory controller stores user data in the normal cell region, controls the nonvolatile memory device to perform a column repair on first defective bit-lines among the first bit-lines, assigns additional column addresses to the first defective bit-lines and the second bit-lines and stores at least a portion of the parity data in a region corresponding to the additionally assigned column addresses.

公开(公告)号：US11817153B2

公开(公告)日：2023-11-14

申请号：US17503197

申请日：2021-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Kim ,  Sehwan Park ,  Ilhan Park ,  Youngdeok Seo ,  Dongmin Shin

IPC: G11C16/16 ,  G11C16/08 ,  G11C16/04 ,  G11C16/26 ,  G11C16/24

CPC classification number: G11C16/16 ,  G11C16/0433 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26

Abstract: A memory device may include a memory block and a control circuit. The memory block may include a first sub-block and a second sub-block that are connected between a common source line and a plurality of bit lines and may be vertically stacked. The control circuit may be configured to select any one of the common source line and the plurality of bit lines as a transmission path of an erase voltage based on positions of the first sub-block and the second sub-block, and perform erase operations on the first sub-block and the second sub-block in units of sub-blocks.

公开(公告)号：US11670387B2

公开(公告)日：2023-06-06

申请号：US17328487

申请日：2021-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdeok Seo ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin

IPC: G11C16/34 ,  G11C16/26 ,  G06N20/10 ,  G11C16/08 ,  G11C16/10 ,  G06F18/214

CPC classification number: G11C16/3481 ,  G06F18/214 ,  G06N20/10 ,  G11C16/08 ,  G11C16/102 ,  G11C16/26 ,  G11C16/3404

Abstract: A non-volatile memory device includes a memory cell array including memory cells, a page buffer circuit including page buffers respectively connected to bit lines, a buffer memory, and a control logic configured to control a read operation on the memory cells. In the read operation, the control logic obtains valley search detection information including read target block information and word line information by performing a valley search sensing operation on a distribution of threshold voltages of the memory cells, obtains a plurality of read levels using a read information model by inputting the valley search detection information into the read information model, and performs a main sensing operation for the read operation.

公开(公告)号：US11610639B2

公开(公告)日：2023-03-21

申请号：US17336378

申请日：2021-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunhyang Park ,  Jinyoung Kim ,  Jisang Lee ,  Sehwan Park ,  Ilhan Park

IPC: G11C16/26 ,  G11C29/42 ,  G11C29/44 ,  G11C16/34 ,  G11C16/04 ,  G11C29/12

Abstract: A reading method for a non-volatile memory device, includes performing a normal read operation using a default read level in response to a first read command; and performing a read operation using a multiple on-chip valley search (OVS) sensing operation in response to a second read command, when read data read in the normal read operation are uncorrectable.

公开(公告)号：US11475972B2

公开(公告)日：2022-10-18

申请号：US17368460

申请日：2021-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwi Yang ,  Ilhan Park ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C7/10 ,  H03K19/21

Abstract: A controller includes control pins, a buffer memory, an error correction circuit, and a processor driving a read level search unit for a read operation of at least one non-volatile memory device, in which the read level search unit receives fail bit information of a sector error-corrected in the first page from the at least one non-volatile memory device when the error correction of the first read data is not possible, and searches for an optimal read level or set a soft decision offset using the fail bit information.

公开(公告)号：US20220254419A1

公开(公告)日：2022-08-11

申请号：US17450871

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinyoung Kim ,  Sehwan Park ,  Youngdeok Seo ,  Dongmin Shin

IPC: G11C16/30 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

Abstract: A memory system includes a non-volatile memory device including a machine learning (ML) module and a peripheral power management integrated circuit (IC), and a memory controller configured to command the non-volatile memory device to enter an idle mode by providing an external power command to the non-volatile memory device. The machine learning (ML) module configures a neural network and trains the neural network via machine learning, and the peripheral power management IC is configured to generate an internal power command that is different from the external power command based on the external power command and monitoring information corresponding to the ML module.