Apparatus and method for enhancing launch speed of large-memory consuming app

    公开(公告)号:US12265709B2

    公开(公告)日:2025-04-01

    申请号:US17982106

    申请日:2022-11-07

    Abstract: Provided is an apparatus and method for improving the entry speed of a large-memory consuming application in an electric device which detect an execution of an application, check if the application is a large-memory consuming application which uses a large amount of memory, and if the application is the large-memory consuming application, execute pre-process thread reclaim, select a process corresponding to a reclaiming target among processes currently resident in the memory, reclaim part of the memory being used by the selected process without terminating the selected process, and thereby improve the entry speed of a large-memory consuming application.

    MICRO LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230402493A1

    公开(公告)日:2023-12-14

    申请号:US18456069

    申请日:2023-08-25

    CPC classification number: H01L27/156

    Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

    Semiconductor package including redistributed layer and method for fabrication therefor

    公开(公告)号:US11699642B2

    公开(公告)日:2023-07-11

    申请号:US16739931

    申请日:2020-01-10

    Inventor: Dongho Kim

    CPC classification number: H01L23/49816 H01L23/3114 H01L23/49861 H01L24/13

    Abstract: A semiconductor package is provided. The semiconductor package includes a redistribution layer, a semiconductor chip, solder balls, an interposer, an encapsulant layer, and an underfill layer. The semiconductor chip is electrically connected to the redistribution layer, and disposed on an upper surface of the redistribution layer. The solder balls are disposed on the upper surface of the redistribution layer spaced apart from the semiconductor chip and are electrically connected to the redistribution layer. The interposer is electrically connected to the solder balls, and is disposed on an upper surface of the solder balls. The encapsulant layer encapsulates the semiconductor chip and side surfaces of the redistribution layer under the interposer. The underfill layer fills a space between a lower surface of the interposer and an upper surface of the encapsulant layer. The encapsulant layer includes a side surface encapsulant region surrounding the side surfaces of the redistribution layer.

    SEMICONDUCTOR DEVICE
    39.
    发明申请

    公开(公告)号:US20200091100A1

    公开(公告)日:2020-03-19

    申请号:US16418036

    申请日:2019-05-21

    Abstract: A semiconductor device includes a semiconductor substrate including a chip region and an edge region around the chip region, a lower insulating layer on the semiconductor substrate, a chip pad on the lower insulating layer on the chip region, an upper insulating layer provided on the lower insulating layer to cover the chip pad, the upper and different insulating layers including different materials, and a redistribution chip pad on the chip region and connected to the chip pad. The upper insulating layer includes a first portion on the chip region having a first thickness, a second portion on the edge region having a second thickness, and a third portion on the edge region, the third portion extending from the second portion, spaced from the first portion, and having a decreasing thickness away from the second portion. The second thickness is smaller than the first thickness.

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