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公开(公告)号:US12265709B2
公开(公告)日:2025-04-01
申请号:US17982106
申请日:2022-11-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jiman Kwon , Dongho Kim , Jaehyeon Park , Geonhee Back , Dongwook Lee , Daehyun Cho
IPC: G06F3/06
Abstract: Provided is an apparatus and method for improving the entry speed of a large-memory consuming application in an electric device which detect an execution of an application, check if the application is a large-memory consuming application which uses a large amount of memory, and if the application is the large-memory consuming application, execute pre-process thread reclaim, select a process corresponding to a reclaiming target among processes currently resident in the memory, reclaim part of the memory being used by the selected process without terminating the selected process, and thereby improve the entry speed of a large-memory consuming application.
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公开(公告)号:US12107193B2
公开(公告)日:2024-10-01
申请号:US17195121
申请日:2021-03-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dongho Kim , Junhee Choi
CPC classification number: H01L33/44 , H01L25/0753 , H01L27/1214 , H01L33/06 , H01L33/24 , H01L33/38 , H01L33/62
Abstract: A nanorod type micro-light emitting diode (LED) includes a nanorod stack structure including a multi-quantum well layer and emitting light from a side surface, and a functional material layer covering the side surface of the nanorod stack structure and increasing a total internal reflection angle of the nanorod stack structure. The functional material layer has a refractive index between a refractive index of the nanorod stack structure and a refractive index of air, and includes a plurality of material layers having a refractive index distribution in which a refractive index decreases as a distance from the side surface increases.
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33.
公开(公告)号:US20240266465A1
公开(公告)日:2024-08-08
申请号:US18636979
申请日:2024-04-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joohun HAN , Junhee Choi , Nakhyun Kim , Dongho Kim , Jinjoo Park
CPC classification number: H01L33/145 , H01L27/156 , H01L33/0062 , H01L33/0095 , H01L33/30
Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.
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34.
公开(公告)号:US11990563B2
公开(公告)日:2024-05-21
申请号:US17197326
申请日:2021-03-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joohun Han , Junhee Choi , Nakhyun Kim , Dongho Kim , Jinjoo Park
CPC classification number: H01L33/145 , H01L27/156 , H01L33/0062 , H01L33/0095 , H01L33/30
Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.
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公开(公告)号:US20230402493A1
公开(公告)日:2023-12-14
申请号:US18456069
申请日:2023-08-25
Applicant: Samsung Electronics Co., LTD.
Inventor: Junhee CHOI , Kiho Kong , Nakhyun Kim , Dongho Kim , Junghun Park , Jinjoo Park , Eunsung Lee , Joohun Han
IPC: H01L27/15
CPC classification number: H01L27/156
Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.
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公开(公告)号:US11776913B2
公开(公告)日:2023-10-03
申请号:US17360730
申请日:2021-06-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hwanpil Park , Dongho Kim
IPC: H01L23/48 , H01L23/538 , H01L23/492
CPC classification number: H01L23/5384 , H01L23/492 , H01L23/5386
Abstract: A semiconductor package including: a first wiring structure; a semiconductor chip disposed on the first wiring structure; a second wiring structure disposed on the semiconductor chip and including a cavity; and a filling member between the first wiring structure and the second wiring structure and in the cavity, wherein an uppermost end of the filling member and an uppermost end of the second wiring structure are located at the same level.
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公开(公告)号:US11699642B2
公开(公告)日:2023-07-11
申请号:US16739931
申请日:2020-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dongho Kim
IPC: H01L23/31 , H01L23/498 , H01L23/00
CPC classification number: H01L23/49816 , H01L23/3114 , H01L23/49861 , H01L24/13
Abstract: A semiconductor package is provided. The semiconductor package includes a redistribution layer, a semiconductor chip, solder balls, an interposer, an encapsulant layer, and an underfill layer. The semiconductor chip is electrically connected to the redistribution layer, and disposed on an upper surface of the redistribution layer. The solder balls are disposed on the upper surface of the redistribution layer spaced apart from the semiconductor chip and are electrically connected to the redistribution layer. The interposer is electrically connected to the solder balls, and is disposed on an upper surface of the solder balls. The encapsulant layer encapsulates the semiconductor chip and side surfaces of the redistribution layer under the interposer. The underfill layer fills a space between a lower surface of the interposer and an upper surface of the encapsulant layer. The encapsulant layer includes a side surface encapsulant region surrounding the side surfaces of the redistribution layer.
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公开(公告)号:US20220285188A1
公开(公告)日:2022-09-08
申请号:US17506154
申请日:2021-10-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunjoon KIM , Seogwoo Hong , Kyungwook Hwang , Junsik Hwang , Dongho Kim , Joonyong Park
IPC: H01L21/673 , H01L33/20 , H01L33/62 , B65G47/90
Abstract: Provided is a display transfer structure including a substrate including a plurality of wells, and a plurality of light emitting elements disposed in the plurality of wells, wherein the plurality of light emitting elements have a rotationally asymmetric planar shape, and wherein the plurality of wells respectively have a planar shape different from a planar shape of each of the plurality of light emitting elements.
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公开(公告)号:US20200091100A1
公开(公告)日:2020-03-19
申请号:US16418036
申请日:2019-05-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jung-Hoon Han , Dong-Wan Kim , Dongho Kim , Jaewon Seo
Abstract: A semiconductor device includes a semiconductor substrate including a chip region and an edge region around the chip region, a lower insulating layer on the semiconductor substrate, a chip pad on the lower insulating layer on the chip region, an upper insulating layer provided on the lower insulating layer to cover the chip pad, the upper and different insulating layers including different materials, and a redistribution chip pad on the chip region and connected to the chip pad. The upper insulating layer includes a first portion on the chip region having a first thickness, a second portion on the edge region having a second thickness, and a third portion on the edge region, the third portion extending from the second portion, spaced from the first portion, and having a decreasing thickness away from the second portion. The second thickness is smaller than the first thickness.
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公开(公告)号:US10012539B2
公开(公告)日:2018-07-03
申请号:US15208953
申请日:2016-07-13
Applicant: SAMSUNG ELECTRONICS CO., LTD. , IMEC VZW
Inventor: Dongho Kim , Jeonghwan Song
CPC classification number: G01J3/1895 , G01J2003/1847 , G02B5/1861 , G02B6/02076 , G02B6/124 , G02B6/29316 , G02B6/29328 , G02B6/29356 , G02B6/29389
Abstract: Provided are a Bragg grating and a spectroscopy device including the same. The Bragg grating is disposed at each of opposite ends of a resonator for reflecting light of a certain wavelength band and includes a core member extending from a waveguide of the resonator in a lengthwise direction of the waveguide; a plurality of first refractive members protruding from the core member and spaced apart from each other along the lengthwise direction; and a second refractive member filling spaces between the first refractive members and having a refractive index different from a refractive index of the first refractive members.
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