公开(公告)号：US12265709B2

公开(公告)日：2025-04-01

申请号：US17982106

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiman Kwon ,  Dongho Kim ,  Jaehyeon Park ,  Geonhee Back ,  Dongwook Lee ,  Daehyun Cho

IPC: G06F3/06

Abstract: Provided is an apparatus and method for improving the entry speed of a large-memory consuming application in an electric device which detect an execution of an application, check if the application is a large-memory consuming application which uses a large amount of memory, and if the application is the large-memory consuming application, execute pre-process thread reclaim, select a process corresponding to a reclaiming target among processes currently resident in the memory, reclaim part of the memory being used by the selected process without terminating the selected process, and thereby improve the entry speed of a large-memory consuming application.

公开(公告)号：US12271295B2

公开(公告)日：2025-04-08

申请号：US18119134

申请日：2023-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongho Kim ,  Jiman Kwon ,  Jaehyeon Park ,  Geonhee Back ,  Dongwook Lee ,  Daehyun Cho

IPC: G06F12/02

Abstract: A method of controlling a memory and an electronic device performing the method are provided. The electronic device includes a memory configured to store instructions executable by the processor; and at least one processor configured to execute the instructions to: determine a use state of the electronic device corresponding to an available area of the memory, determine a temperature of the electronic device, determine a memory parameter based on the use state and the temperature, and convert a used area of the memory into the available area based on the memory parameter.