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1.发明公开公开(公告)号：US20240113264A1
公开(公告)日：2024-04-04
申请号：US18375194
申请日：2023-09-29
发明人： Junhee Choi , Kiho Kong , Joosung Kim , Eunsung Lee , Joohun Han
CPC分类号： H01L33/502 , H01L25/167 , H01L2933/0041
摘要： A light emitting device includes a light emitting rod in which a porous first type semiconductor layer, an active layer, and a second type semiconductor layer are sequentially arranged, and a wavelength conversion cluster is embedded in the porous first type semiconductor layer and configured to convert a first light generated in the active layer into a second light having a different wavelength.
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公开(公告)号：US10413275B2
公开(公告)日：2019-09-17
申请号：US14732894
申请日：2015-06-08
发明人： Eunsung Lee , Youngil Kim , Jong Keun Song , Minseog Choi
摘要： Disclosed herein is an ultrasound probe including a transducer array configured to generate ultrasonic waves, an integrated circuit disposed on a back surface of the transducer array by using an adhesive member, a printed circuit board connected to the integrated circuit and configured to output a signal to the integrated circuit, and a pad bridge disposed on front surfaces of the printed circuit board and the integrated circuit by using the adhesive member and configured to electrically connect the printed circuit board with the integrated circuit. An area of a region of the ultrasound probe contacting the human body may be reduced without reducing the size of the transducer array, and the integrated circuit and the printed circuit board may be integrally connected by using the adhesive member.
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公开(公告)号：US20230143907A1
公开(公告)日：2023-05-11
申请号：US17720872
申请日：2022-04-14
发明人： Junhee Choi , Kiho Kong , Nakhyun Kim , Joosung Kim , Younghwan Park , Junghun Park , Dongchul Shin , Eunsung Lee , Joohun Han
CPC分类号： H01L33/04 , H01L27/156 , H01L33/24 , H01L33/44
摘要： Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.
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公开(公告)号：US12026376B2
公开(公告)日：2024-07-02
申请号：US17953756
申请日：2022-09-27
发明人： Eunsung Lee , Changhoon Shin
IPC分类号： G06F3/06
CPC分类号： G06F3/0619 , G06F3/0652 , G06F3/0679
摘要： A method and a device are provided. The device includes a first memory, a second memory having a storage characteristic different from that of the first memory, and a processor operatively connected to at least one of the first memory and the second memory. The processor is configured to generate a logical storage area in a data area of the first memory, store designated data in the generated logical storage area, and enter a recovery mode to store the data stored in the logical storage area in the second memory, format the first memory, and move the data stored in the second memory to the data area of the first memory.
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公开(公告)号：US11776988B2
公开(公告)日：2023-10-03
申请号：US17227981
申请日：2021-04-12
发明人： Junhee Choi , Kiho Kong , Nakhyun Kim , Dongho Kim , Junghun Park , Jinjoo Park , Eunsung Lee , Joohun Han
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.
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公开(公告)号：US11114616B2
公开(公告)日：2021-09-07
申请号：US16550476
申请日：2019-08-26
发明人： Eunsung Lee , Duseop Yoon , Joungeun Yoo
摘要： Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.
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7.发明公开公开(公告)号：US20240072014A1
公开(公告)日：2024-02-29
申请号：US18106855
申请日：2023-02-07
发明人： Kiho KONG , Junhee Chol , Eunsung Lee
IPC分类号： H01L25/075 , H01L33/00 , H01L33/10 , H01L33/14 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/005 , H01L33/10 , H01L33/145 , H01L33/62 , H01L2933/0066
摘要： An ultra-high pixel per inch (ppi) micro-light-emitting diode (LED) display includes a micro-LED layer including a plurality of micro-LEDs, a backplane layer including a switching device connected to the micro-LED layer, and a field shielding member provided between the plurality of micro-LEDs and the switching device, the field shielding member configured to shield the switching device from a field applied to the switching device from the plurality of micro-LEDs during an operation of the micro-LED display, where the micro-LED layer and the backplane layer form a single body in a sequentially stacked structure.
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公开(公告)号：US20230402493A1
公开(公告)日：2023-12-14
申请号：US18456069
申请日：2023-08-25
发明人： Junhee CHOI , Kiho Kong , Nakhyun Kim , Dongho Kim , Junghun Park , Jinjoo Park , Eunsung Lee , Joohun Han
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.
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公开(公告)号：US10292680B2
公开(公告)日：2019-05-21
申请号：US14694489
申请日：2015-04-23
申请人： SAMSUNG ELECTRONICS CO., LTD. , Kyungpook National University Industry-Academic Cooperation Foundation
发明人： Youngil Kim , Jong Keun Song , Baehyung Kim , Yongrae Roh , Eunsung Lee , Kyungil Cho , Minseog Choi
摘要： An ultrasonic probe includes a capacitive micromachined ultrasonic transducer (cMUT) array configured to generate ultrasonic waves, an integrated circuit to which the cMUT array is bonded, and a flexible printed circuit board having one end connected to the integrated circuit to output signals to the integrated circuit, the integrated circuit including pads provided on the integrated circuit and an anisotropic conductive film (ACF) provided on the pads, and the one end of the flexible printed circuit board being connected to the ACF to thereby connect the flexible printed circuit board to the integrated circuit.
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公开(公告)号：US11634793B2
公开(公告)日：2023-04-25
申请号：US16776729
申请日：2020-01-30
发明人： Eunsung Lee , Duseop Yoon , Joungeun Yoo , Dohyang Kim
摘要： A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.
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