- 专利标题: Ti-based amorphous alloy and phase change memory device applying the same
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申请号: US16550476申请日: 2019-08-26
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公开(公告)号: US11114616B2公开(公告)日: 2021-09-07
- 发明人: Eunsung Lee , Duseop Yoon , Joungeun Yoo
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2019-0023290 20190227
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24
摘要:
Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.
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