公开(公告)号：US20220328616A1

公开(公告)日：2022-10-13

申请号：US17853290

申请日：2022-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20220157823A1

公开(公告)日：2022-05-19

申请号：US17592555

申请日：2022-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Jeong-gyu SONG ,  Younsoo KIM ,  Jooho LEE

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US20210115564A1

公开(公告)日：2021-04-22

申请号：US16827862

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun PARK ,  Jooho LEE ,  Yongsung KIM ,  Jeonggyu SONG

IPC: C23C16/56 ,  H01L27/11585 ,  H01L27/11502 ,  C23C16/455 ,  C23C14/58 ,  C23C14/08 ,  C23C16/40 ,  C01G27/02

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.

公开(公告)号：US20200273698A1

公开(公告)日：2020-08-27

申请号：US16520990

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Yongsung KIM ,  Jeongil BANG ,  Jooho LEE ,  Junghwa KIM ,  Haeryong KIM ,  Myoungho JEONG

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

公开(公告)号：US20170069436A1

公开(公告)日：2017-03-09

申请号：US15066780

申请日：2016-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooho LEE ,  Yongsung KIM ,  Changseung LEE

IPC: H01G11/86 ,  C23C16/50 ,  C23C16/40 ,  C23C16/455 ,  H01G11/36 ,  C23C16/26

CPC classification number: H01G11/86 ,  H01G11/26 ,  H01G11/36 ,  H01G11/46 ,  H01G11/70 ,  Y02E60/13

Abstract: Example embodiments relate to a method of fabricating a graphene nano-mesh by selectively growing an oxide layer on a defect site of a graphene layer and etching the oxide layer to form the graphene nano-mesh. The method includes forming a graphene layer on a catalyst layer, forming an oxide layer on a defect site of the graphene layer, forming the graphene nano-mesh including a plurality of openings by etching the oxide layer, and transferring, after removing the catalyst layer, the graphene nano-mesh onto a substrate.

Abstract translation: 示例性实施例涉及通过选择性地生长石墨烯层的缺陷部位上的氧化物层并蚀刻氧化物层以形成石墨烯纳米网来制造石墨烯纳米网的方法。 该方法包括在催化剂层上形成石墨烯层，在石墨烯层的缺陷部位形成氧化层，通过蚀刻氧化层形成包括多个开口的石墨烯纳米网，并且在除去催化剂层之后转移 ，石墨烯纳米网到基底上。

公开(公告)号：US20250076925A1

公开(公告)日：2025-03-06

申请号：US18954022

申请日：2024-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho LEE ,  Jaeyong SIM ,  Yongjun CHOI

IPC: G06F1/16 ,  H05K1/02 ,  H05K1/14

Abstract: An electronic device includes: a frame including a side wall and at least partially forming an antenna; a bracket provided within the frame; a first printed circuit board provided on the bracket and including at least one grounding portion; a second printed circuit board provided within the frame; and a screw, where the second printed circuit board includes: a first portion coupled to the first printed circuit board; an extension portion extending from the first portion between the side wall of the frame and the bracket; a second portion extending from the extension portion between the first printed circuit board and the bracket; and a conductive trace extending from the first portion to the second portion through the extension portion, and where the conductive trace is electrically connected to the at least one grounding portion of the first printed circuit board in the second portion.

公开(公告)号：US20250006778A1

公开(公告)日：2025-01-02

申请号：US18510973

申请日：2023-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong KIM ,  Eunae CHO ,  Beomseok KIM ,  Jeeeun YANG ,  Jooho LEE

IPC: H01G4/08 ,  H01G4/008 ,  H10B12/00

Abstract: A capacitor includes a first electrode, a second electrode spaced apart from the first electrode, a dielectric layer arranged between the first electrode and the second electrode, and an interface layer arranged between the second electrode and the dielectric layer, wherein the interface layer includes a first element, a second element, and a third element, the first element includes aluminum (Al), the second element includes gallium (Ga), and the third element includes oxygen (O).

公开(公告)号：US20240213306A1

公开(公告)日：2024-06-27

申请号：US18363045

申请日：2023-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghyun KIM ,  Sungchan KANG ,  Haeryong KIM ,  Jeonggyu SONG ,  Cheheung KIM ,  Jooho LEE

IPC: H01G4/33 ,  H01G4/008 ,  H01G4/12 ,  H01L27/06

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/1236 ,  H01G4/33 ,  H01L27/0629 ,  H01L28/65

Abstract: Provided are a capacitor and a semiconductor device including the same. The capacitor includes a first electrode, a dielectric layer over the first electrode, a second electrode between the first electrode and the dielectric layer, and a third electrode over the dielectric layer and in contact with the dielectric layer such that the dielectric layer is between the second electrode and the third electrode. A thermal expansion coefficient of the first electrode may be greater than a thermal expansion coefficient of the dielectric layer, and a work function of the second electrode may be higher than a work function of the first electrode.

公开(公告)号：US20240088203A1

公开(公告)日：2024-03-14

申请号：US18512648

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Younsoo KIM ,  Jooho LEE ,  Narae HAN

IPC: H10B12/00

CPC classification number: H01L28/56 ,  H01L28/60 ,  H10B12/315 ,  H10B12/34

Abstract: Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.

公开(公告)号：US20230320078A1

公开(公告)日：2023-10-05

申请号：US18331493

申请日：2023-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Yongsung KIM ,  Jooho LEE

IPC: H10B12/00 ,  G11C11/22 ,  H01L29/51 ,  G01G7/00 ,  G01G7/06 ,  G11C19/00 ,  G11C19/18

CPC classification number: H10B12/37 ,  H01L28/56 ,  G11C11/221 ,  G11C11/223 ,  G11C11/2275 ,  H01L29/516 ,  G01G7/00 ,  G01G7/06 ,  G11C19/005 ,  G11C19/18 ,  H10B12/33

Abstract: A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation:





V
MAX

=


(

1
+



❘
"\[LeftBracketingBar]"


Z
2


❘
"\[RightBracketingBar]"




❘
"\[LeftBracketingBar]"


Z
1


❘
"\[RightBracketingBar]"




)

⁢

t
F

⁢

E
FM






where VMAX is a capacitance boosting operating voltage, Z1 is impedance of the ferroelectric film, Z2 is impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization.