公开(公告)号：US20230399749A1

公开(公告)日：2023-12-14

申请号：US18455941

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun PARK ,  Jooho LEE ,  Yongsung KIM ,  Jeonggyu SONG

IPC: C23C16/56 ,  C23C16/455 ,  C23C14/58 ,  C23C16/40 ,  C01G27/02 ,  C23C14/08 ,  H10B51/00 ,  H10B53/00

CPC classification number: C23C16/56 ,  C23C16/45525 ,  C23C14/5806 ,  C23C16/40 ,  C01G27/02 ,  C23C14/08 ,  H10B51/00 ,  H10B53/00 ,  C01P2004/24 ,  C01P2002/72 ,  C01P2006/40 ,  C01P2002/76

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.

公开(公告)号：US20210115564A1

公开(公告)日：2021-04-22

申请号：US16827862

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun PARK ,  Jooho LEE ,  Yongsung KIM ,  Jeonggyu SONG

IPC: C23C16/56 ,  H01L27/11585 ,  H01L27/11502 ,  C23C16/455 ,  C23C14/58 ,  C23C14/08 ,  C23C16/40 ,  C01G27/02

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.

公开(公告)号：US20250016978A1

公开(公告)日：2025-01-09

申请号：US18613471

申请日：2024-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Min PARK ,  Ji-Sung KIM ,  Hae Ryong KIM ,  Bo-Eun PARK ,  Han Jin LIM ,  Hyung Suk JUNG

IPC: H10B12/00

Abstract: A capacitor structure is provided. The capacitor structure comprises an upper electrode, a lower electrode including a lower electrode film and a lower interface electrode film, a capacitor dielectric film between the lower electrode and the upper electrode, and an interface blocking film between the lower electrode and the capacitor dielectric film, the interface blocking film being in contact with the capacitor dielectric film and the lower interface electrode film, wherein the interface blocking film includes a first metal oxide containing a first metal element, the lower interface electrode film includes a second conductive metal oxide containing a second metal element different from the first metal element, the capacitor dielectric film does not include the first metal oxide, and a thickness of the lower interface electrode film is greater than that of the interface blocking film.