公开(公告)号：US20150334847A1

公开(公告)日：2015-11-19

申请号：US14811813

申请日：2015-07-28

Applicant: QUALCOMM Incorporated

Inventor： Changhan Yun ,  Francesco Carobolante ,  Chengjie Zuo ,  Jonghae Kim ,  Mario Francisco Velez ,  Lawrence D. Smith ,  Matthew M. Nowak

IPC: H05K3/10 ,  H05K3/00 ,  H05K3/30

CPC classification number: H05K1/165 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/19105 ,  H05K1/0231 ,  H05K1/0243 ,  H05K1/0262 ,  H05K3/0091 ,  H05K3/10 ,  H05K3/30 ,  H05K7/1092 ,  Y10T29/4913 ,  Y10T29/49131 ,  Y10T29/49147 ,  Y10T29/49156

Abstract: A two-stage power delivery network includes a voltage regulator and an interposer. The interposer includes a packaging substrate having an embedded inductor. The embedded inductor includes a set of traces and a set of through substrate vias at opposing ends of the traces. The interposer is coupled to the voltage regulator. The two-stage power delivery network also includes a semiconductor die supported by the packaging substrate. The two-stage power delivery network also includes a capacitor that is supported by the packaging substrate. The capacitor is operable to provide a decoupling capacitance associated with the semiconductor die and a capacitance to reduce a switching noise of the voltage regulator.

Abstract translation: 两级供电网络包括电压调节器和插入器。 插入器包括具有嵌入式电感器的封装衬底。 嵌入式电感器包括一组迹线和一组在迹线的相对端处的通过衬底通孔。 插入器耦合到电压调节器。 两级供电网络还包括由封装基板支撑的半导体管芯。 两级供电网络还包括由包装基板支撑的电容器。 电容器可操作以提供与半导体管芯相关联的去耦电容和电容，以降低电压调节器的开关噪声。

公开(公告)号：US09101068B2

公开(公告)日：2015-08-04

申请号：US13830033

申请日：2013-03-14

Applicant: QUALCOMM Incorporated

Inventor： Changhan Yun ,  Francesco Carobolante ,  Chengjie Zuo ,  Jonghae Kim ,  Mario Francisco Velez ,  Lawrence D. Smith ,  Matthew M. Nowak

IPC: H05K7/00 ,  H05K7/10 ,  H05K1/02 ,  H05K1/16 ,  H01L23/498

CPC classification number: H05K1/165 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/19105 ,  H05K1/0231 ,  H05K1/0243 ,  H05K1/0262 ,  H05K3/0091 ,  H05K3/10 ,  H05K3/30 ,  H05K7/1092 ,  Y10T29/4913 ,  Y10T29/49131 ,  Y10T29/49147 ,  Y10T29/49156

Abstract: A two-stage power delivery network includes a voltage regulator and an interposer. The interposer includes a packaging substrate having an embedded inductor. The embedded inductor includes a set of traces and a set of through substrate vias at opposing ends of the traces. The interposer is coupled to the voltage regulator. The two-stage power delivery network also includes a semiconductor die supported by the packaging substrate. The two-stage power delivery network also includes a capacitor that is supported by the packaging substrate. The capacitor is operable to provide a decoupling capacitance associated with the semiconductor die and a capacitance to reduce a switching noise of the voltage regulator.

Abstract translation: 两级供电网络包括电压调节器和插入器。 插入器包括具有嵌入式电感器的封装衬底。 嵌入式电感器包括一组迹线和一组在迹线的相对端处的通过衬底通孔。 插入器耦合到电压调节器。 两级供电网络还包括由封装基板支撑的半导体管芯。 两级供电网络还包括由包装基板支撑的电容器。 电容器可操作以提供与半导体管芯相关联的去耦电容和电容，以降低电压调节器的开关噪声。

公开(公告)号：US20140327510A1

公开(公告)日：2014-11-06

申请号：US13887788

申请日：2013-05-06

Applicant: QUALCOMM INCORPORATED

Inventor： Daeik D. Kim ,  David F. Berdy ,  Chengjie Zuo ,  Mario Francisco Velez ,  Changhan Yun ,  Robert P. Mikulka ,  Jonghae Kim ,  Je-Hsiung Lan

IPC: H05K9/00 ,  H05K3/10 ,  H05K3/00 ,  H01F5/00 ,  H05K1/11

CPC classification number: H05K9/002 ,  H01F17/0006 ,  H01F27/362 ,  H01F2017/002 ,  H05K1/115 ,  H05K3/0017 ,  H05K3/107

Abstract: An electronic device includes a structure. The structure includes a first set of through glass vias (TGVs) and a second set of TGVs. The first set of TGVs includes a first via and the second set of TGVs includes a second via. The first via has a different cross-sectional shape than the second via.

Abstract translation: 一种电子设备包括一种结构。 该结构包括第一组直通玻璃通孔（TGV）和第二组TGV。 第一组TGV包括第一通孔，第二组TGV包括第二通孔。 第一通孔具有与第二通孔不同的横截面形状。

公开(公告)号：US20140268616A1

公开(公告)日：2014-09-18

申请号：US13833632

申请日：2013-03-15

Applicant: QUALCOMM INCORPORATED

Inventor： Je-Hsiung Lan ,  Chengjie Zuo ,  Changhan Yun ,  David F. Berdy ,  Daeik D. Kim ,  Robert P. Mikulka ,  Mario Francisco Velez ,  Jonghae Kim

IPC: H01L49/02 ,  G06F17/50

CPC classification number: H01L28/40 ,  G06F17/5068 ,  H01L23/15 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L27/016 ,  H01L27/12 ,  H01L28/10 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a particular embodiment, a device includes a substrate, a via that extends at least partially through the substrate, and a capacitor. A dielectric of the capacitor is located between the via and a plate of the capacitor, and the plate of the capacitor is external to the substrate and within the device.

Abstract translation: 在特定实施例中，器件包括衬底，至少部分延伸穿过衬底的通孔和电容器。 电容器的电介质位于电容器的通孔和板之间，并且电容器的板在衬底外部和器件内部。

公开(公告)号：US20140167273A1

公开(公告)日：2014-06-19

申请号：US13719984

申请日：2012-12-19

Applicant: QUALCOMM INCORPORATED

Inventor： Jonghae Kim ,  Chengjie Zuo ,  Changhan Yun ,  Mario Francisco Velez ,  Ravindra V. Shenoy ,  Matthew M. Nowak ,  Francesco Carobolante ,  Kyu-Pyung Hwang ,  Dong Wook Kim ,  Young K. Song

IPC: H01L23/482 ,  H01L23/00

CPC classification number: H01L21/6836 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/1517 ,  H01L2924/181 ,  H05K1/185 ,  H05K3/4602 ,  H05K2201/10015 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

Abstract: One feature pertains to a multi-layer package substrate of an integrated circuit package that comprises a discrete circuit component (DCC) having at least one electrode. The DCC is embedded within an insulator layer, and a via coupling component electrically couples to the electrode. A first portion of the via coupling component extends beyond a first edge of the electrode, and a plurality of vias each having a first end couple to the first via coupling component. At least a first via of the plurality of vias couples to the first portion of the via coupling component that extends beyond the first edge of the electrode. Moreover, the plurality of vias each have a second end that electrically couple to a first outer metal layer, and at least a second portion of the via coupling component is positioned within a first inner metal layer.

Abstract translation: 一个特征涉及集成电路封装的多层封装衬底，其包括具有至少一个电极的分立电路部件（DCC）。 DCC嵌入在绝缘体层内，并且通孔耦合部件电耦合到电极。 通孔耦合部件的第一部分延伸超过电极的第一边缘，并且多个通孔各自具有耦合到第一通路耦合部件的第一端。 多个通孔中的至少第一通孔耦合到延伸超出电极的第一边缘的通孔连接部件的第一部分。 此外，多个通孔各自具有电耦合到第一外部金属层的第二端，并且通孔连接部件的至少第二部分位于第一内部金属层内。

公开(公告)号：US20140139969A1

公开(公告)日：2014-05-22

申请号：US13684072

申请日：2012-11-21

Applicant: QUALCOMM INCORPORATED

Inventor： Kyu-Pyung Hwang ,  Youngsville K. Song ,  Changhan Yun ,  Dong Wook Kim

IPC: H01G4/002

CPC classification number: H01G4/002 ,  H01G4/012 ,  H01G4/33 ,  H01L23/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/19105 ,  Y10T29/417 ,  H01L2924/00

Abstract: Some novel features pertain to a capacitor structure that includes a first conductive layer, a second conductive layer and a non-conductive layer. The first conductive layer has a first overlapping portion and a second overlapping portion. The second conductive layer has a third overlapping portion, a fourth overlapping portion, and a non-overlapping portion. The third overlapping portion overlaps with the first overlapping portion of the first conductive layer. The fourth overlapping portion overlaps with the second overlapping portion of the first conductive layer. The non-overlapping portion is free of any overlap (e.g., vertical overlap) with the first conductive layer. The non-conductive layer separates the first and second conductive layers. The non-conductive layer electrically insulates the third overlapping portion and the fourth overlapping portion from the first conductive layer.

Abstract translation: 一些新颖的特征涉及包括第一导电层，第二导电层和非导电层的电容器结构。 第一导电层具有第一重叠部分和第二重叠部分。 第二导电层具有第三重叠部分，第四重叠部分和非重叠部分。 第三重叠部分与第一导电层的第一重叠部分重叠。 第四重叠部分与第一导电层的第二重叠部分重叠。 非重叠部分与第一导电层没有任何重叠（例如，垂直重叠）。 非导电层分离第一和第二导电层。 非导电层将第三重叠部分和第四重叠部分与第一导电层电绝缘。