公开(公告)号：US20250021019A1

公开(公告)日：2025-01-16

申请号：US18902197

申请日：2024-09-30

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/00 ,  G03F9/00 ,  G06T7/33

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US11874605B2

公开(公告)日：2024-01-16

申请号：US16921880

申请日：2020-07-06

Applicant: KLA Corporation

Inventor： Michael E. Adel ,  Inna Tarshish-Shapir ,  Shiming Wei ,  Mark Ghinovker

IPC: H01L21/66 ,  G03F7/00 ,  G06F30/00

CPC classification number: G03F7/70491 ,  G03F7/70616 ,  G06F30/00 ,  H01L22/30

Abstract: Metrology target design methods and verification targets are provided. Methods comprise using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may comprise overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also comprise modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

公开(公告)号：US11862524B2

公开(公告)日：2024-01-02

申请号：US17487842

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: H01L21/66 ,  H01L23/544

CPC classification number: H01L22/30 ,  H01L23/544 ,  H01L22/12

Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.

公开(公告)号：US11809090B2

公开(公告)日：2023-11-07

申请号：US16996254

申请日：2020-08-18

Applicant: KLA Corporation

Inventor： Anna Golotsvan ,  Inna Steely-Tarshish ,  Mark Ghinovker ,  Rawi Dirawi

IPC: G01N21/47 ,  G03F7/00 ,  G01N23/2251

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G01N23/2251 ,  G03F7/70608 ,  G03F7/70683 ,  G01N2223/07

Abstract: A metrology target includes a first set of pattern elements compatible with a first metrology mode along one or more directions, and a second set of pattern elements compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements.

公开(公告)号：US20230324810A1

公开(公告)日：2023-10-12

申请号：US18204662

申请日：2023-06-01

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

公开(公告)号：US11774863B2

公开(公告)日：2023-10-03

申请号：US17612907

申请日：2021-10-21

Applicant: KLA CORPORATION

Inventor： Mark Ghinovker ,  Yoel Feler

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/70525

Abstract: A method for semiconductor metrology includes depositing a first film layer on a semiconductor substrate and a second film layer overlying the first film layer. The first and second film layers are patterned to define a plurality of overlay targets comprising first target features formed in the first film layer having respective first locations, which are spaced apart by first nominal distances, and second target features formed in the second film layer having respective second locations, which are spaced apart by second nominal distances, which are different from the first nominal distances. An image of the semiconductor substrate is processed to measure respective displacements between the first and second target locations in each of the overlay targets, and to estimate both an actual overlay error between the patterning of the first and second film layers and a measurement error of the imaging assembly.

公开(公告)号：US20230129618A1

公开(公告)日：2023-04-27

申请号：US17612907

申请日：2021-10-21

Applicant: KLA CORPORATION

Inventor： Mark Ghinovker ,  Yoel Feler

IPC: G03F7/20 ,  G03F7/00

Abstract: A method for semiconductor metrology includes depositing a first film layer on a semiconductor substrate and a second film layer overlying the first film layer. The first and second film layers are patterned to define a plurality of overlay targets comprising first target features formed in the first film layer having respective first locations, which are spaced apart by first nominal distances, and second target features formed in the second film layer having respective second locations, which are spaced apart by second nominal distances, which are different from the first nominal distances. An image of the semiconductor substrate is processed to measure respective displacements between the first and second target locations in each of the overlay targets, and to estimate both an actual overlay error between the patterning of the first and second film layers and a measurement error of the imaging assembly.

公开(公告)号：US20220413394A1

公开(公告)日：2022-12-29

申请号：US17487725

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95

Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

公开(公告)号：US11476144B2

公开(公告)日：2022-10-18

申请号：US16609873

申请日：2019-09-30

Applicant: KLA CORPORATION

Inventor： Mark Ghinovker

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/66

Abstract: Metrology targets and methods are provided, which comprise at least two overlapping structures configured to be measurable in a mutually exclusive manner at least at two different corresponding optical conditions. The targets may be single cell targets which are measured at different optical conditions which enable independent measurements of the different layers of the target. Accordingly, the targets may be designed to be very small, and be located in-die for providing accurate metrology measured of complex devices.

公开(公告)号：US20220013468A1

公开(公告)日：2022-01-13

申请号：US16964714

申请日：2020-06-25

Applicant: KLA CORPORATION

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Raviv Yohanan ,  Mark Ghinovker

IPC: H01L23/544 ,  G01B21/22

Abstract: A target and method for using the same in the measurement of misregistration between at least a first layer and a second layer formed on a wafer in the manufacture of functional semiconductor devices on the wafer, the functional semiconductor devices including functional device structures (FDSTs), the target including a plurality of measurement structures (MSTs), the plurality of MSTs being part of the first layer and the second layer and a plurality of device-like structures (DLSTs), the plurality of DLSTs being part of at least one of the first layer and the second layer, the DLSTs sharing at least one characteristic with the FDSTs and the MSTs not sharing the at least one characteristic with the FDSTs.