Reflective film coated substrate, mask blank, reflective mask, and semiconductor device manufacturing method

    公开(公告)号:US11899356B2

    公开(公告)日:2024-02-13

    申请号:US17958088

    申请日:2022-09-30

    CPC classification number: G03F1/24

    Abstract: A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.

    Reflective film coated substrate, mask blank, reflective mask, and semiconductor device manufacturing method

    公开(公告)号:US11500281B2

    公开(公告)日:2022-11-15

    申请号:US17008949

    申请日:2020-09-01

    Abstract: A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.

    Method for manufacturing reflective mask blank, and method for manufacturing reflective mask

    公开(公告)号:US11131921B2

    公开(公告)日:2021-09-28

    申请号:US16054295

    申请日:2018-08-03

    Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.

    Reflective mask blank, method of manufacturing same, reflective mask and method of manufacturing semiconductor device

    公开(公告)号:US09726969B2

    公开(公告)日:2017-08-08

    申请号:US14787532

    申请日:2014-08-29

    CPC classification number: G03F1/24 G03F1/84 G03F7/2004

    Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70−BA30)/(BD70−BD30)≧60(%/nm) and maximum height (Rmax)≦4.5 nm.

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