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公开(公告)号：US10444620B2
公开(公告)日：2019-10-15
申请号：US15897330
申请日：2018-02-15
申请人： HOYA CORPORATION
摘要： To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank has a structure in which a phase-shift film, an etching stopper film, a light-shielding film, and a hard mask film are laminated in said order on a transparent substrate, and at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, and satisfies the conditions of Formula (1) below: CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084 Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.
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公开(公告)号：US09933698B2
公开(公告)日：2018-04-03
申请号：US15121124
申请日：2014-12-09
申请人： HOYA CORPORATION
CPC分类号： G03F1/32 , G03F1/58 , G03F7/2053
摘要： To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank 10 comprises a phase-shift film 2 and a light-shielding film 4 on a transparent substrate 1, the phase-shift film 2 is made of a material with ArF light fastness, and at least one layer in the light-shielding film 4 is made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below: CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084 Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.
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公开(公告)号：US11119399B2
公开(公告)日：2021-09-14
申请号：US15760265
申请日：2016-09-08
申请人： HOYA CORPORATION
摘要： According to the present invention, provided is a mask blank (10), in which: a light shielding film (4) has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film (4) is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film (2) has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A). CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084 Expression (1) 0.04×AS−0.06×AM>1 Expression (A)
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公开(公告)号：US10088744B2
公开(公告)日：2018-10-02
申请号：US15122486
申请日：2015-02-24
申请人： HOYA CORPORATION
发明人： Hiroaki Shishido , Osamu Nozawa , Takashi Uchida
IPC分类号： G03F1/30 , G03F1/58 , G03F1/80 , C23C14/06 , C23C14/34 , C23C14/58 , G03F7/20 , G03F7/34 , H01L21/033
摘要： A mask blank having a structure in which, on a transparent substrate, a light shielding film and a hard mask film are laminated in the stated order from the transparent substrate side. The hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure of three layers wherein a lower layer, an intermediate layer, and an upper layer are laminated in the stated order from the transparent substrate side. The upper layer has a lowest content of chromium in the light shielding film, the intermediate layer has a highest content of chromium in the light shielding film. It contains at least one metallic element selected from indium, tin, and molybdenum.
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公开(公告)号：US11435662B2
公开(公告)日：2022-09-06
申请号：US17391593
申请日：2021-08-02
申请人： HOYA CORPORATION
发明人： Ryo Ohkubo , Hiroaki Shishido , Takashi Uchida
IPC分类号： G03F1/32
摘要： In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.
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公开(公告)号：US11119400B2
公开(公告)日：2021-09-14
申请号：US16603127
申请日：2018-04-02
申请人： HOYA CORPORATION
发明人： Ryo Ohkubo , Hiroaki Shishido , Takashi Uchida
IPC分类号： G03F1/32
摘要： In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.
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公开(公告)号：US11899356B2
公开(公告)日：2024-02-13
申请号：US17958088
申请日：2022-09-30
申请人： HOYA CORPORATION
发明人： Kazuhiro Hamamoto , Takashi Uchida
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.
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公开(公告)号：US11500281B2
公开(公告)日：2022-11-15
申请号：US17008949
申请日：2020-09-01
申请人： HOYA CORPORATION
发明人： Kazuhiro Hamamoto , Takashi Uchida
IPC分类号： G03F1/24
摘要： A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.
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公开(公告)号：US09939723B2
公开(公告)日：2018-04-10
申请号：US15122453
申请日：2015-02-24
申请人： HOYA CORPORATION
发明人： Hiroaki Shishido , Osamu Nozawa , Takashi Uchida
CPC分类号： G03F1/32 , G03F1/58 , G03F1/80 , G03F7/20 , G03F7/34 , H01L21/3081 , H01L21/3086
摘要： A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.
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