公开(公告)号：US12013631B2

公开(公告)日：2024-06-18

申请号：US18073794

申请日：2022-12-02

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido

IPC: G03F1/26 ,  G03F1/50 ,  G03F1/54 ,  G03F7/20

CPC classification number: G03F1/26 ,  G03F1/50 ,  G03F1/54 ,  G03F7/20

Abstract: A mask blank including a light shielding film pattern having high ArF light fastness.
The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.

公开(公告)号：US11543744B2

公开(公告)日：2023-01-03

申请号：US17397642

申请日：2021-08-09

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido

IPC: G03F1/26 ,  G03F7/20 ,  G03F1/54 ,  G03F1/50

Abstract: A mask blank including a light shielding film pattern having high ArF light fastness.
The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.

公开(公告)号：US11226549B2

公开(公告)日：2022-01-18

申请号：US15754927

申请日：2016-06-20

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Hiroaki Shishido

IPC: G03F1/26 ,  G03F1/48 ,  G03F1/80 ,  G03F1/84 ,  H01L21/027

Abstract: Provided is a mask blank for a phase shift mask having an etching stopper film, which satisfies the characteristics: higher durability to dry etching with fluorine-based gas that is used during the shift pattern formation as compared to that of a transparent substrate; high resistance to chemical cleaning; and high transmittance of exposure light.
The mask blank includes a light shielding film on a main surface of a transparent substrate, having a structure where an etching stopper film, a phase shift film, and a light shielding film are laminated in this order on the transparent substrate; wherein the phase shift film includes a material containing silicon and oxygen; and the etching stopper film includes a material containing silicon, aluminum, and oxygen.

公开(公告)号：US11054735B2

公开(公告)日：2021-07-06

申请号：US16318216

申请日：2017-06-22

Applicant: HOYA CORPORATION

Inventor： Takenori Kajiwara ,  Ryo Ohkubo ,  Hiroaki Shishido ,  Osamu Nozawa

IPC: G03F1/32 ,  G03F1/74 ,  G03F1/26 ,  G03F1/80 ,  H01L21/033

Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.

公开(公告)号：US10942441B2

公开(公告)日：2021-03-09

申请号：US16596008

申请日：2019-10-08

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Takenori Kajiwara ,  Hiroaki Shishido

IPC: G03F1/32 ,  G03F1/54

Abstract: A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.

公开(公告)号：US10444620B2

公开(公告)日：2019-10-15

申请号：US15897330

申请日：2018-02-15

Applicant: HOYA CORPORATION

Inventor： Atsushi Matsumoto ,  Hiroaki Shishido ,  Takashi Uchida

IPC: G03F1/32 ,  G03F1/58 ,  G03F7/20

Abstract: To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank has a structure in which a phase-shift film, an etching stopper film, a light-shielding film, and a hard mask film are laminated in said order on a transparent substrate, and at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, and satisfies the conditions of Formula (1) below: CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084   Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.

公开(公告)号：US09933698B2

公开(公告)日：2018-04-03

申请号：US15121124

申请日：2014-12-09

Applicant: HOYA CORPORATION

Inventor： Atsushi Matsumoto ,  Hiroaki Shishido ,  Takashi Uchida

IPC: G03F1/26 ,  G03F1/32 ,  G03F1/58 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/58 ,  G03F7/2053

Abstract: To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank 10 comprises a phase-shift film 2 and a light-shielding film 4 on a transparent substrate 1, the phase-shift film 2 is made of a material with ArF light fastness, and at least one layer in the light-shielding film 4 is made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below: CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084  Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.

公开(公告)号：US09726972B2

公开(公告)日：2017-08-08

申请号：US14904452

申请日：2014-08-15

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido ,  Ryo Ohkubo ,  Osamu Nozawa

IPC: G03F1/32 ,  G03F1/80 ,  G03F1/58 ,  H01L21/027 ,  C23F4/00

CPC classification number: G03F1/80 ,  C23F4/00 ,  G03F1/32 ,  G03F1/58 ,  H01L21/027

Abstract: A mask blank wherein damage to a light semitransmissive film due to dry etching for removing a light shielding film is inhibited. Mask blank 100 has a light semitransmissive film 2 and light shielding film 4 laminated on a main surface of a transparent substrate 1. Film 2 can be dry etched with a fluorine-based gas. Film 4 has laminated lower layer 41 and upper layer 42. Lower layer 41 contained tantalum and id substantially free from hafnium, zirconium, and oxygen. Upper layer 42 contains tantalum and one or more of hafnium and zirconium and is substantially free from oxygen excluding the surface layer of the upper layer 42. Between the light semitransmissive film 2 and lower layer 41 is an etching stopper film 3 having etch selectivity with respect to the lower layer 41 in dry etching with an etching gas containing the chlorine-based gas and no oxygen gas.

公开(公告)号：US09436079B2

公开(公告)日：2016-09-06

申请号：US14627426

申请日：2015-02-20

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Hiroaki Shishido ,  Kazuya Sakai

IPC: G03F1/32 ,  C23C14/00 ,  C23C14/06 ,  G03F1/54 ,  G03F7/20 ,  G03F1/26 ,  B82Y30/00

CPC classification number: G03F1/32 ,  B82Y30/00 ,  C23C14/0036 ,  C23C14/0641 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2041 ,  Y10S977/755

Abstract: Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.

公开(公告)号：US09075314B2

公开(公告)日：2015-07-07

申请号：US13944251

申请日：2013-07-17

Applicant: HOYA CORPORATION

Inventor： Hiroyuki Iwashita ,  Hiroaki Shishido ,  Atsushi Kominato ,  Masahiro Hashimoto ,  Morio Hosoya

IPC: G03F1/26 ,  G03F1/46 ,  G03F1/50 ,  G03F1/58 ,  G03F1/22 ,  G03F1/54 ,  H01L21/027

CPC classification number: G03F1/22 ,  G03F1/46 ,  G03F1/54 ,  G03F1/80 ,  H01L21/0274

Abstract: A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.

Abstract translation: 一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料。 该坯料包括其上设置有多层结构的薄膜的透光基板。 该薄膜具有依次层叠有背面防反射层，遮光层和前表面防反射层的遮光膜。 遮光层包含铬和氮，铬含量大于50原子％。 前表面抗反射层和背面防反射层各自具有由包含铬，氮，氧和碳的材料制成的非晶结构。 前表面抗反射层和背面防反射层的铬含量比例为40原子％以下。 背面防反射层的氮含量和氧含量的第一个总和小于前表面抗反射层的氮含量和氧含量的第二和。