公开(公告)号：US20200176415A1

公开(公告)日：2020-06-04

申请号：US16633240

申请日：2018-07-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Ryuji SUGIURA ,  Yuta KONDOH ,  Naoki UCHIYAMA

IPC: H01L23/00 ,  H01L27/06 ,  H01L21/268 ,  H01L21/78

Abstract: A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.

公开(公告)号：US20170216973A1

公开(公告)日：2017-08-03

申请号：US15314182

申请日：2015-03-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Yasunori IGASAKI ,  Mamiko MATSUNAGA

IPC: B23K26/53 ,  B23K26/067 ,  B23K26/066

Abstract: A laser processing device includes: a laser light source emitting laser light; a converging optical system converging the laser light at an object to be processed; a reflective spatial light modulator modulating the laser light such that the laser light is caused to branch into 0th order light and ±nth order light (n is a natural number) including at least first processing light and second processing light, and the first processing light is converged at a first converging point and the second processing light is converged at a second converging point; and a light blocking part blocking light to be converged at an outside with respect to the first processing light and the second processing light of the 0th order light and the ±nth order light to be converged at the object.

公开(公告)号：US20130168831A1

公开(公告)日：2013-07-04

申请号：US13757111

申请日：2013-02-01

Applicant: Hamamatsu Photonics K.K.

Inventor： Takeshi SAKAMOTO ,  Kenichi Muramatsu

IPC: H01L23/544

CPC classification number: H01L23/544 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  C03B33/0222 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.

公开(公告)号：US20250105011A1

公开(公告)日：2025-03-27

申请号：US18726138

申请日：2022-08-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Yo SUGIMOTO ,  Takafumi OGIWARA ,  Takashi KURITA ,  Ryo YOSHIMURA

IPC: H01L21/268

Abstract: A laser processing method including: a first step of preparing a wafer having a first region and a second region; a second step of irradiating the street with a predetermined first laser beam; and a third step of irradiating the street with a predetermined second laser beam after the second step, the first laser beam being a laser beam having processing energy for removing a part of the insulating film in the first region to leave the other part, completely removing the metal structure in the second region, and removing a part of the insulating film in the second region to leave the other part, and the second laser beam being a laser beam having processing energy for completely removing the insulating film in the first region and the insulating film in the second region after the second step.

公开(公告)号：US20250100085A1

公开(公告)日：2025-03-27

申请号：US18727716

申请日：2022-10-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yo SUGIMOTO ,  Yuta KONDOH ,  Takeshi SAKAMOTO

IPC: B23K26/53 ,  B23K26/03 ,  B23K26/04 ,  B23K26/38 ,  B23K101/40

Abstract: There is provided a processing condition acquisition method for acquiring conditions of laser processing for forming a weakened region in a functional element layer by irradiating an object with laser light from a first surface side, the object including a substrate including a first surface and a second surface opposite to the first surface, and the functional element layer provided on the second surface of the substrate, the method including: a first step of performing first processing as the laser processing a plurality of times at different positions in the first surface while changing a converging position of the laser light in a Z direction intersecting the first surface within a range including an interface between the substrate and the functional element layer.

公开(公告)号：US20240082959A1

公开(公告)日：2024-03-14

申请号：US18268652

申请日：2021-12-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yo SUGIMOTO ,  Takeshi SAKAMOTO ,  Takafumi OGIWARA ,  Naoki UCHIYAMA ,  Takashi KURITA ,  Ryo YOSHIMURA

IPC: B23K26/53 ,  B23K26/03 ,  B23K26/364 ,  H01L21/268

CPC classification number: B23K26/53 ,  B23K26/032 ,  B23K26/364 ,  H01L21/268 ,  B23K2103/56

Abstract: A laser processing apparatus includes a support unit that supports a wafer including a plurality of functional elements disposed adjacent to each other via a street, an irradiation unit that irradiates the street with laser light, and a control unit that controls the irradiation unit based on information about the streets so that a first region and a second region of the street are simultaneously irradiated with the laser light, and a power of the laser light for removing a surface layer of the street in the first region is higher than a power for removing the surface layer of the street in the first region. The information about the street includes information that a processing threshold value indicating a difficulty of laser processing in the first region is lower than a processing threshold value in the second region.

公开(公告)号：US20230245906A1

公开(公告)日：2023-08-03

申请号：US17910049

申请日：2021-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Iku SANO

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/78 ,  H01L21/268

CPC classification number: H01L21/67288 ,  H01L22/12 ,  H01L21/78 ,  H01L21/268 ,  H01L21/67092

Abstract: A laser processing device comprising: an irradiation unit configured to irradiate an object with laser light; an image capturing part configured to capture an image of the object; and a control unit configured to control at least the irradiation unit and the image capturing part, wherein the control unit performs a first process of irradiating the object with the laser light by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object, a second process of, after the first process, capturing an image of the object with light having transparency to the object and acquiring information indicating a formation state of the modified spot and/or the fracture, by control of the image capturing part.

公开(公告)号：US20230158609A1

公开(公告)日：2023-05-25

申请号：US17916844

申请日：2021-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Iku SANO ,  Takeshi SAKAMOTO ,  Katsuhiro KOREMATSU

IPC: B23K26/53 ,  B23K26/03 ,  H01L21/268

CPC classification number: B23K26/53 ,  B23K26/032 ,  H01L21/268 ,  B23K2103/56

Abstract: A laser processing device includes a control unit, and the control unit executes a first process of controlling a laser irradiation unit according to a first processing condition set such that a modified region and a modified region are formed inside a wafer; a second process of identifying a state related to each of the modified regions, and of determining whether or not the first processing condition is proper; a third process of controlling the laser irradiation unit according to a second processing condition set such that the modified regions are formed and a modified region is formed between the modified regions in a thickness direction of the wafer inside the wafer; and a fourth process of identifying a state related to each of the modified regions, and of determining whether or not the second processing condition is proper.

公开(公告)号：US20230120386A1

公开(公告)日：2023-04-20

申请号：US17910060

申请日：2021-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Iku SANO

IPC: B23K26/53 ,  B23K26/03 ,  B23K26/06 ,  B23K26/0622

Abstract: A laser processing device includes an irradiation unit configured to irradiate an object with laser light, an image capturing part configured to capture an image of the object, and a control unit configured to control at least the irradiation unit and the image capturing part. A plurality of lines is set in the object. The control unit performs a first process of irradiating the object with the laser light for each of the plurality of lines by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object.

公开(公告)号：US20220410311A1

公开(公告)日：2022-12-29

申请号：US17781146

申请日：2020-12-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takafumi OGIWARA ,  Tsubasa HIROSE ,  Takeshi SAKAMOTO

IPC: B23K26/06

Abstract: A laser processing device comprising: a light source configured to output laser light; a spatial light modulator configured to display a modulation pattern for modulating the laser light output from the light source; a condenser lens configured to condense the laser light modulated by the spatial light modulator, on an object; and a control unit configured to control the spatial light modulator to adjust the modulation pattern in accordance with a traveling direction of a condensing point of the laser light with respect to the object.