公开(公告)号：US20230343646A1

公开(公告)日：2023-10-26

申请号：US17799389

申请日：2021-02-05

Applicant: Kyoritsu Chemical & Co., Ltd. ,  HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke KURITA ,  Yasunobu MATSUMOTO ,  Takeshi SAKAMOTO ,  Iku SANO

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/268 ,  H01L21/67 ,  H01L21/56

CPC classification number: H01L21/78 ,  H01L21/6836 ,  H01L21/268 ,  H01L21/6715 ,  H01L21/56

Abstract: A workpiece cutting method includes: a first step of pasting an expandable sheet on a workpiece; a second step of irradiating, after the first step, the workpiece with laser light to form a modified region and expanding the expandable sheet to divide the workpiece into a plurality of chips, and meanwhile, to form a gap disposed between the plurality of chips and extending to a side surface of the workpiece; a third step of irradiating the expandable sheet with an ultraviolet light after the first step; a fourth step of filling, after the second step and the third step, the gap with resin from an outer edge part of the workpiece including the side surface; a fifth step of curing the resin after the fourth step; and a sixth step of taking out the chips from above the expandable sheet after the fifth step.

公开(公告)号：US20230095941A1

公开(公告)日：2023-03-30

申请号：US17910075

申请日：2021-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Iku SANO ,  Takeshi SAKAMOTO

IPC: B23K26/53 ,  B23K26/03 ,  B23K26/06 ,  B23K26/0622

Abstract: A laser processing device includes an irradiation unit configured to irradiate an object with laser light, an image capturing part configured to capture an image of the object with light having transparency to the object, a display unit configured to display information, and a control unit configured to control at least the irradiation unit, the image capturing part, and the display unit. The control unit performs a first process of irradiating the object with the laser light by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object, a second process of, after the first process, capturing an image of the object by control of the image capturing part and acquiring information indicating a formation state of the modified spot and/or the fracture.

公开(公告)号：US20230154774A1

公开(公告)日：2023-05-18

申请号：US17916837

申请日：2021-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Takafumi OGIWARA ,  Iku SANO

IPC: H01L21/67 ,  H01L21/66 ,  B23K26/53

CPC classification number: H01L21/67253 ,  H01L22/12 ,  H01L22/24 ,  B23K26/53

Abstract: An inspection device includes: a laser irradiation unit; an imaging unit; and a control unit. The control unit is configured to execute a processing process of controlling the laser irradiation unit according to a recipe set such that a plurality of modified regions are formed inside a wafer by irradiating the wafer with a laser beam and a full-cut state where cracks extending from the modified regions have reached a back surface and a surface is attained; an identification process of identifying a state of the crack on the back surface extending from the modified region, and a state of at least one of the modified regions and the cracks inside the wafer, based on a signal; and a determination process of determining whether or not a dicing force applied to the wafer according to the recipe is proper, based on information identified in the identification process.

公开(公告)号：US20230113051A1

公开(公告)日：2023-04-13

申请号：US17908293

申请日：2021-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Takafumi OGIWARA ,  Iku SANO

IPC: H01L21/67 ,  H01L21/66

Abstract: This inspection device includes: a laser irradiation unit that irradiates a wafer having a back surface and a front surface with a laser beam from the back surface side of the wafer; an imaging unit that outputs light having permeability to the wafer and detects the light propagating through the wafer; and a control part configured to perform a first process of controlling the laser irradiation unit so that a modified region is formed inside the wafer by irradiating the wafer with the laser beam and a second process of deriving a position of the modified region on the basis of a signal output from the imaging unit that detects the light and deriving a thickness of the wafer on the basis of the derived position of the modified region and a set recipe.

公开(公告)号：US20230245906A1

公开(公告)日：2023-08-03

申请号：US17910049

申请日：2021-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Iku SANO

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/78 ,  H01L21/268

CPC classification number: H01L21/67288 ,  H01L22/12 ,  H01L21/78 ,  H01L21/268 ,  H01L21/67092

Abstract: A laser processing device comprising: an irradiation unit configured to irradiate an object with laser light; an image capturing part configured to capture an image of the object; and a control unit configured to control at least the irradiation unit and the image capturing part, wherein the control unit performs a first process of irradiating the object with the laser light by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object, a second process of, after the first process, capturing an image of the object with light having transparency to the object and acquiring information indicating a formation state of the modified spot and/or the fracture, by control of the image capturing part.

公开(公告)号：US20230158609A1

公开(公告)日：2023-05-25

申请号：US17916844

申请日：2021-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Iku SANO ,  Takeshi SAKAMOTO ,  Katsuhiro KOREMATSU

IPC: B23K26/53 ,  B23K26/03 ,  H01L21/268

CPC classification number: B23K26/53 ,  B23K26/032 ,  H01L21/268 ,  B23K2103/56

Abstract: A laser processing device includes a control unit, and the control unit executes a first process of controlling a laser irradiation unit according to a first processing condition set such that a modified region and a modified region are formed inside a wafer; a second process of identifying a state related to each of the modified regions, and of determining whether or not the first processing condition is proper; a third process of controlling the laser irradiation unit according to a second processing condition set such that the modified regions are formed and a modified region is formed between the modified regions in a thickness direction of the wafer inside the wafer; and a fourth process of identifying a state related to each of the modified regions, and of determining whether or not the second processing condition is proper.

公开(公告)号：US20230120386A1

公开(公告)日：2023-04-20

申请号：US17910060

申请日：2021-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Iku SANO

IPC: B23K26/53 ,  B23K26/03 ,  B23K26/06 ,  B23K26/0622

Abstract: A laser processing device includes an irradiation unit configured to irradiate an object with laser light, an image capturing part configured to capture an image of the object, and a control unit configured to control at least the irradiation unit and the image capturing part. A plurality of lines is set in the object. The control unit performs a first process of irradiating the object with the laser light for each of the plurality of lines by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object.

公开(公告)号：US20230335421A1

公开(公告)日：2023-10-19

申请号：US17908288

申请日：2021-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Takafumi OGIWARA ,  Iku SANO

IPC: H01L21/67 ,  G01N21/95 ,  B23K26/03 ,  B23K26/53

CPC classification number: H01L21/67253 ,  G01N21/9501 ,  B23K26/032 ,  B23K26/53 ,  H01L21/67092 ,  B23K2103/56

Abstract: An inspection device includes a laser irradiation unit irradiating a wafer with laser light, a display displaying information, and a control unit. The control unit is constituted to execute deriving of an estimated processing result including information a modified region and a crack extending from the modified region formed on the wafer when the wafer is irradiated with the laser light by the laser irradiation unit on the basis of set recipes (processing conditions), and controlling the display so as to display an estimated processing result image depicting both a graphic image of the wafer and a graphic image of the modified region and the crack in the wafer in consideration of positions of the modified region and the crack in the wafer derived as the estimated processing result.

公开(公告)号：US20220331909A1

公开(公告)日：2022-10-20

申请号：US17642998

申请日：2020-09-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Iku SANO ,  Takeshi SAKAMOTO

IPC: B23K26/53 ,  B23K26/03

Abstract: A laser processing device includes a stage; a laser irradiation unit configured to irradiate the wafer with laser light; an image capturing unit configured to detect light propagated through a semiconductor substrate; and a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, deriving a position of a tip of an upper crack on a rear surface side, which is a crack extending from the modified region to the rear surface side of the semiconductor substrate, on the basis of a signal output from the image capturing unit having detected the light, and determining whether or not a crack reaching state has been realized on the basis of the position of the tip of the upper crack on the rear surface side.

公开(公告)号：US20220331908A1

公开(公告)日：2022-10-20

申请号：US17642990

申请日：2020-09-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Iku SANO ,  Takeshi SAKAMOTO

IPC: B23K26/53 ,  B23K26/03

Abstract: A laser processing device includes a stage; a laser irradiation unit; an image capturing unit; a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, determining whether or not a crack extending from the modified region is in a crack reaching state where the crack has reached a front surface side of the semiconductor substrate on the basis of a signal output from the image capturing unit, and deriving information related to adjustment of irradiation conditions of the laser irradiation unit on the basis of determination results.