公开(公告)号：US20170330726A1

公开(公告)日：2017-11-16

申请号：US15593486

申请日：2017-05-12

Applicant: Entegris, Inc.

Inventor： Barry Lewis Chambers ,  Biing-Tsair Tien ,  Joseph D. Sweeney ,  Ying Tang ,  Oleg Byl ,  Steven E. Bishop ,  Sharad N. Yedave

IPC: H01J37/317 ,  C09D5/24 ,  C09D1/00 ,  H01J37/32 ,  H01L21/67 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C09D1/00 ,  C09D5/24 ,  H01J37/026 ,  H01J37/3244 ,  H01J2237/006 ,  H01J2237/022 ,  H01L21/265 ,  H01L21/67213

Abstract: Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and other fluorinated hydrocarbons of CxFy (x≧1, y≧1) general formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and O3, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H2, NH3, N2H4, B2H6, AsH3, PH3, SiH4, Si2H6, H2S, H2Se, CH4 and other hydrocarbons of CxHy (x≧1, y≧1) general formula and GeH4.

公开(公告)号：US20150357152A1

公开(公告)日：2015-12-10

申请号：US14827783

申请日：2015-08-17

Applicant: Entegris, Inc.

Inventor： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, equilibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性质，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流动通道沉积物检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：US12140272B2

公开(公告)日：2024-11-12

申请号：US18102259

申请日：2023-01-27

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  John Robert Morris ,  Nathan Ballard Jones ,  Diego Troya

IPC: F17C11/00 ,  B01J20/20 ,  C01B6/10 ,  C01B32/20 ,  F17C5/00

Abstract: Described are systems and methods of storing adsorbing diborane on carbon adsorption medium. The invention discloses a vessel for storing diborane. The vessel includes: a vessel interior; microporous carbon adsorbent in the vessel interior; diborane in the vessel interior at least partially adsorbed on the microporous adsorbent. The microporous adsorbent includes slit pores between graphite layers at a graphite layer spacing that increases an activation energy required for diborane degradation relative to an activation energy of degradation of non-adsorbed gaseous diborane at ambient pressure, and at the same temperature.

公开(公告)号：US11682540B2

公开(公告)日：2023-06-20

申请号：US17466362

申请日：2021-09-03

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20230094492A1

公开(公告)日：2023-03-30

申请号：US17952996

申请日：2022-09-26

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Joe R. Despres ,  Ed A. Sturm

IPC: F17C11/00 ,  B01D53/04 ,  B01J20/20 ,  F17C7/00

Abstract: Described are storage and dispensing systems, and related methods, for storing and selectively dispensing high purity reagent gas from a storage vessel in which the reagent gas is held in sorptive relationship to pyrolyzed carbon adsorption particles.

公开(公告)号：US20220349528A1

公开(公告)日：2022-11-03

申请号：US17732446

申请日：2022-04-28

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Douglas Edwards ,  Jessica Verbisky

IPC: F17C13/04 ,  F17C13/02

Abstract: A storage vessel to contain reagent material. The storage vessel includes a vessel with a bottom, a top, an outlet at the top, sidewalls extending from the bottom to the top, a valve at the outlet, and an interior defined by the bottom, the top, and the sidewalls, the interior including a volume, and an extension tube having a first end engaged with the valve and a second end located toward a center of the interior volume from the first end such that, regardless of orientation of the vessel, the second end is above at least 25 percent of a volume of the interior volume.

公开(公告)号：US11299802B2

公开(公告)日：2022-04-12

申请号：US17055885

申请日：2019-03-15

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during an ion implantation procedure.

公开(公告)号：US11139145B2

公开(公告)日：2021-10-05

申请号：US16904286

申请日：2020-06-17

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20170250084A1

公开(公告)日：2017-08-31

申请号：US15507859

申请日：2015-08-19

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01L21/265 ,  H01J37/244 ,  H01L31/18 ,  H01J37/317

CPC classification number: H01L21/2658 ,  H01J37/08 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/006 ,  H01L31/18

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US20160107136A1

公开(公告)日：2016-04-21

申请号：US14940278

申请日：2015-11-13

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward E. Jones ,  Chiranjeevi Pydi ,  Joseph D. Sweeney

IPC: B01J8/02 ,  C01B35/06

CPC classification number: B01J8/0285 ,  B01J8/0465 ,  B01J2208/00017 ,  B01J2208/00389 ,  B01J2208/00433 ,  B01J2208/00539 ,  C01B35/061

Abstract: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

Abstract translation: 描述了一种装置，其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域，以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。 该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。 反应气体和反应性固体的反应可以在第一反应区进行，反应气体和中间产物的反应在第二反应区中进行。 在具体实施方案中，反应气体和中间产物的反应是可逆的，并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区，以抑制形成反应性固体的反应。