Abstract:
Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates to ultrathin, flexible glass targets. The improved processes provide graphene materials with less defects in the structure.
Abstract:
Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract:
Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.
Abstract:
Methods of forming a laminate comprising a sheet of semiconductor material utilize a system. The system comprises a fibrous sheet, a guide member for guiding the fibrous sheet, and a melt of a semiconductor material. The sheet of semiconductor material and a laminate comprising the fibrous sheet and the sheet of semiconductor material are also included.
Abstract:
Provided herein is a glass article comprising: an ion-exchanged glass layer comprising a first major surface and a second major surface; and at least one negatively doped graphene layer having a first major surface and a second major surface; the negatively doped graphene layer first major surface located opposite at least a portion of at least one of the first major surface and the second major surface of the ion-exchanged glass layer, the negatively doped graphene layer having a carrier density of at least about 1013 cm−2. Also provided herein are devices comprising the glass article and methods of making the glass article.
Abstract:
A method of modifying a deformable substrate that includes depositing a sessile liquid droplet on a first surface of a deformable substrate, the sessile liquid droplet forming a deformed region in the first surface of the deformable substrate, the deformed region having a recess and a perimeter rim, the recess extending toward a second surface of the deformable substrate, and the perimeter rim extending away from the second surface of the deformable substrate and curing the deformable substrate, thereby increasing an elastic modulus of the deformable substrate such that upon removal of the sessile liquid droplet, the deformed region remains in the first surface of the deformable substrate.
Abstract:
A method of manufacturing a glass article comprises: (A) forming a first layer of catalyst metal on a glass substrate; (B) heating the glass substrate; (C) forming a second layer of an alloy of a first metal and a second metal on the first layer; (D) heating the glass substrate, thereby forming a glass article comprising: (i) the glass substrate; (ii) an oxide of the first metal covalently bonded thereto; and (iii) a metallic region bonded to the oxide, the metallic region comprising the catalyst, first, and second metals. In embodiments, the method further comprises (E) forming a third layer of a primary metal on the metallic region; and (F) heating the glass article thereby forming the glass article comprising: (i) the oxide of the first metal covalently bonded the glass substrate; and (ii) a new metallic region bonded to the oxide comprising the catalyst, first, second, and primary metals.
Abstract:
Described herein are articles and methods of making articles, for example glass articles, comprising a thin sheet and a carrier, wherein the thin sheet and carrier are bonded together using a modification (coating) layer, for example a coating layer comprising a cationic surfactant or a coating layer comprising an organic salt, and associated deposition methods. The modification layer bonds the thin sheet and carrier together with sufficient bond strength to prevent delamination of the thin sheet and the carrier during high temperature (? 500° C.) processing while also preventing formation of a permanent bond between the sheets during such processing.
Abstract:
A method of forming a graphene device includes: providing a glass substrate with a blocking layer disposed thereon to form a stack; providing a first electrode and a second electrode; increasing the temperature of the stack to at least 100° C.; applying an external electric field (VP) to the first electrode such that at least one metal ion of the glass substrate migrates toward the first electrode to create a depletion region in the glass substrate adjacent the second electrode; decreasing the temperature of the stack to room temperature while applying the external electric field to the first electrode; and after reaching room temperature, setting the external electric field to zero to create a frozen voltage region adjacent the second electrode.
Abstract:
A method is provided for manufacturing an article comprising a transparent conductive material, wherein a transparent conductive material (e.g., indium tin oxide) is deposited onto a substrate (e.g., fused silica) by physical vapor deposition, then annealed at high temperature (i.e., at least 450° C.) in a nitrogen atmosphere. The resulting article comprises a transparent conductive material that reduces the trade-off between low resistivity (or sheet resistance) and high near infrared transmission. For example, the transparent conductive material thus obtained may possess a transmission of at least 80% at 1550 nm while having a resistivity of less than or equal to about 5×10−4 Ohm-cm and a Haacke figure of merit of at least about 40×10−4Ω−1. Also provided is a method for modulating the resistivity and/or the near infrared transmission of a transparent conductive material by annealing the transparent conductive material at a high temperature under nitrogen atmosphere.