公开(公告)号：US10980511B2

公开(公告)日：2021-04-20

申请号：US15421854

申请日：2017-02-01

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Gregory Corteville

IPC: A61B8/14 ,  A61B8/00 ,  A61B8/13 ,  A61B8/08 ,  G03B27/42 ,  G03B27/52 ,  B06B1/02 ,  G01S7/00 ,  G01S7/52 ,  G01S15/89 ,  A61N7/02 ,  A61N7/00

Abstract: Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality.

公开(公告)号：US10856844B2

公开(公告)日：2020-12-08

申请号：US16401249

申请日：2019-05-02

Applicant: Butterfly Network, Inc.

Inventor： Keith G. Fife ,  Jianwei Liu

IPC: H01L29/84 ,  A61B8/00 ,  H01L41/293 ,  H01L41/113

Abstract: Vertical packaging configurations for ultrasound chips are described. Vertical packaging may involve use of integrated interconnects other than wires for wire bonding. Examples of such integrated interconnects include edge-contact vias, through silicon vias and conductive pillars. Edge-contact vias are vias defined in a trench formed in the ultrasound chip. Multiple vias may be provided for each trench, thus increasing the density of vias. Such vias enable electric access to the ultrasound transducers. Through silicon vias are formed through the silicon handle and provide access from the bottom surface of the ultrasound chip. Conductive pillars, including copper pillars, are disposed around the perimeter of an ultrasound chip and provide access to the ultrasound transducers from the top surface of the chip. Use of these types of packaging techniques can enable a substantial reduction in the dimensions of an ultrasound device.

公开(公告)号：US10856840B2

公开(公告)日：2020-12-08

申请号：US15415434

申请日：2017-01-25

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Christopher Thomas McNulty ,  Jaime Scott Zahorian ,  Paul Francis Cristman ,  Matthew de Jonge ,  Keith G. Fife

IPC: A61B8/00 ,  A61B8/14 ,  A61B8/12 ,  B06B1/02 ,  B06B1/06

Abstract: A universal ultrasound device having an ultrasound includes a semiconductor die; a plurality of ultrasonic transducers integrated on the semiconductor die, the plurality of ultrasonic transducers configured to operate a first mode associated with a first frequency range and a second mode associated with a second frequency range, wherein the first frequency range is at least partially non-overlapping with the second frequency range; and control circuitry configured to: control the plurality of ultrasonic transducers to generate and/or detect ultrasound signals having frequencies in the first frequency range, in response to receiving an indication to operate the ultrasound probe in the first mode; and control the plurality of ultrasonic transducers to generate and/or detect ultrasound signals having frequencies in the second frequency range, in response to receiving an indication to operate the ultrasound probe in the second mode.

公开(公告)号：US20200269279A1

公开(公告)日：2020-08-27

申请号：US16683750

申请日：2019-11-14

Applicant: Butterfly Network, Inc.

Inventor： Lingyun Miao ,  Jianwei Liu ,  Keith G. Fife

IPC: B06B1/02 ,  B81B3/00 ,  B81C1/00

Abstract: A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.

公开(公告)号：US10512936B2

公开(公告)日：2019-12-24

申请号：US16012999

申请日：2018-06-20

Applicant: Butterfly Network, Inc.

Inventor： Susan A. Alie ,  Keith G. Fife ,  Joseph Lutsky ,  David Grosjean

IPC: B06B1/02 ,  B81C1/00 ,  G01N29/24 ,  B81B3/00 ,  G01N29/22

Abstract: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

公开(公告)号：US20190210869A1

公开(公告)日：2019-07-11

申请号：US16290188

申请日：2019-03-01

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: B81C1/00 ,  B06B1/02 ,  B81B7/00 ,  G01N29/24 ,  H01L29/84 ,  H04R19/00

Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

公开(公告)号：US20190160490A1

公开(公告)日：2019-05-30

申请号：US16245214

申请日：2019-01-10

Applicant: Butterfly Network, Inc.

Inventor： Susan A. Alie ,  Keith G. Fife ,  Joseph Lutsky ,  David Grosjean

IPC: B06B1/02 ,  B81C1/00 ,  G01N29/24 ,  B81B3/00

Abstract: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

公开(公告)号：US10231713B2

公开(公告)日：2019-03-19

申请号：US15263939

申请日：2016-09-13

Applicant: Butterfly Network, Inc.

Inventor： Kailiang Chen ,  Keith G. Fife

IPC: A61B8/00 ,  H03M1/12 ,  H03M1/06 ,  G01S7/52 ,  A61B8/08

Abstract: A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.

公开(公告)号：US10228353B2

公开(公告)日：2019-03-12

申请号：US15648187

申请日：2017-07-12

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180243792A1

公开(公告)日：2018-08-30

申请号：US15905289

申请日：2018-02-26

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Susan A. Alie ,  Joseph Lutsky ,  David Grosjean

IPC: B06B1/02 ,  B81B3/00 ,  B81C1/00 ,  G01N29/24

CPC classification number: B06B1/0292 ,  B81B3/0086 ,  B81C1/00698 ,  B81C2201/0173 ,  B81C2201/115 ,  B81C2203/038 ,  G01N29/2406

Abstract: Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.