Array substrate and method for fabricating the same
    33.
    发明授权
    Array substrate and method for fabricating the same 有权
    阵列基板及其制造方法

    公开(公告)号:US09548324B2

    公开(公告)日:2017-01-17

    申请号:US14430310

    申请日:2014-05-12

    Abstract: An array substrate and a method for fabricating the same are disclosed. The method includes steps of providing a substrate (20), a first metal layer including patterns of gate electrodes (21, 24) of a first and second TFTs, an active layer (27) and a gate insulation layer (28) are formed on the substrate; forming an etch stop layer film and a photoresist sequentially on the substrate (20), and allowing the photoresist to form a first, second and third regions through gray-scale exposing and developing; forming a pattern of an etch stop layer (29), a connection via hole (30), and a contact via hole (31) respectively in the first, second and third regions through a patterning process; and forming source electrodes and drain electrodes (22, 23,25, 26) of the first and second TFTs. Photoresist of different thicknesses are disposed according to etch depths, thereby avoiding the over-etch of relatively shallow via holes.

    Abstract translation: 公开了阵列基板及其制造方法。 该方法包括提供衬底(20)的步骤,包括第一和第二TFT的栅电极(21,24)的图案的第一金属层,有源层(27)和栅绝缘层(28)形成在 基材; 在衬底(20)上依次形成蚀刻停止层膜和光致抗蚀剂,并且通过灰度曝光和显影使光致抗蚀剂形成第一,第二和第三区域; 通过图案化工艺在第一,第二和第三区域分别形成蚀刻停止层(29),连接通孔(30)和接触通孔(31)的图案; 以及形成所述第一和第二TFT的源电极和漏电极(22,23,25,26)。 根据蚀刻深度设置不同厚度的光刻胶,从而避免相对浅的通孔的过度蚀刻。

    Organic electroluminescent display panel, manufacturing method thereof, and display device

    公开(公告)号:US11114636B2

    公开(公告)日:2021-09-07

    申请号:US16076420

    申请日:2018-02-02

    Abstract: The present disclosure relates to an organic electroluminescent display panel, a method of manufacturing the same, and a display device that can alleviate or avoid the occurrence of pixel crosstalk problems due to lateral conduction of the charge generation layer. An organic electroluminescent display panel is provided which comprises: a substrate; an anode layer and a pixel defining layer over the substrate, the pixel defining layer defining pixel units, wherein a recess is provided in the pixel defining layer between adjacent pixel units; a stack of organic electroluminescent units over the anode layer and the pixel defining layer, the stack comprising at least two organic electroluminescent units and a charge generation layer disposed between organic electroluminescent units which are adjacent to each other; a cathode layer over the stack, wherein the corresponding charge generation layers of the adjacent pixel units are disconnected at the recesses, and wherein the cathode layer is continuous at the recess.

    Thin film transistor and method for manufacturing the same, and display panel

    公开(公告)号:US10204933B2

    公开(公告)日:2019-02-12

    申请号:US15324791

    申请日:2016-04-07

    Abstract: The application provides a thin film transistor, a method for manufacturing the thin film transistor, and a display panel, the thin film transistor includes a metal electrode, and a step of forming the metal electrode includes: forming a first material layer on a substrate; performing a pattering process on the first material layer to form a groove pattern in the first material layer such that the groove pattern matches with a pattern of the metal electrode to be formed; forming the metal electrode in the groove pattern such that a gap is formed between an edge of the metal electrode and an edge of the groove pattern; forming a protection pattern on the substrate formed with the metal electrode such that the protection pattern covers the metal electrode and its edge. In the application, the protection pattern is formed on the resultant metal electrode and can effectively protect conductive metal.

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