公开(公告)号：US20230317740A1

公开(公告)日：2023-10-05

申请号：US18021090

申请日：2022-03-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Ce Ning ,  Yunping Di ,  Binbin Tong ,  Rui Huang ,  Tianmin Zhou ,  Wei Yang ,  Liping Lei

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/124 ,  G02F1/136209 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/127

Abstract: The present application provides an array substrate, a manufacturing method for the same, and a display panel. The array substrate includes a display area and a non-display area connected to the display area, and the display area includes a plurality of sub-pixels arranged in an array. The non-display area includes at least one polysilicon transistor, each of the sub-pixels includes an oxide transistor and a pixel electrode. A gate of the oxide transistor as well as a first electrode and a second electrode of the polysilicon transistor are arranged in a same layer; an active layer of the oxide transistor and the pixel electrode are arranged in a same layer, and are in contact with each other. The active layer of the oxide transistor includes an oxide semiconductor material, and the pixel electrode includes an oxide conductor material.

公开(公告)号：US11695079B2

公开(公告)日：2023-07-04

申请号：US17356167

申请日：2021-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Xiaochun Xu ,  Nianqi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US11605739B2

公开(公告)日：2023-03-14

申请号：US16876344

申请日：2020-05-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Shuilang Dong ,  Wenhua Wang ,  Nianqi Yao

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02

Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.

公开(公告)号：US11495043B2

公开(公告)日：2022-11-08

申请号：US16412644

申请日：2019-05-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianmin Zhou ,  Lizhong Wang ,  Rui Huang

IPC: G06V40/13 ,  H01L27/32 ,  H01L51/56 ,  H01L27/146

Abstract: The present disclosure provides an optical fingerprint identification unit, a display panel, a method for manufacturing an optical fingerprint identification unit and a method for identifying a fingerprint. The optical fingerprint identification unit includes a substrate, and a light source, a photoluminescent layer and a light sensor above the substrate. The light source is configured to emit visible light. The photoluminescent layer is configured to receive the visible light reflected by a fingerprint and convert the received visible light into non-visible light. The light sensor is configured to detect the non-visible light.

公开(公告)号：US20220344480A1

公开(公告)日：2022-10-27

申请号：US17755380

申请日：2021-05-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Hehe Hu ,  Tianmin Zhou ,  Jipeng Song

IPC: H01L29/417 ,  H01L29/786

Abstract: The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.

公开(公告)号：US11296249B2

公开(公告)日：2022-04-05

申请号：US16812764

申请日：2020-03-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Tianmin Zhou ,  Rui Huang ,  Lizhong Wang ,  Jipeng Song ,  Tao Yang ,  Zhaohui Qiang

IPC: H01L31/101 ,  H01L31/11 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0392

Abstract: A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

公开(公告)号：US20210233467A1

公开(公告)日：2021-07-29

申请号：US16767351

申请日：2019-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingzhao Liu ,  Guoqiang Wang ,  Rui Huang ,  Lizhong Wang ,  Shuilang Dong ,  Xinhong Lu

IPC: G09G3/3233 ,  H01L31/12 ,  H01L29/78 ,  H01L27/12 ,  G09G3/3266

Abstract: The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.