公开(公告)号：US11075228B2

公开(公告)日：2021-07-27

申请号：US16599948

申请日：2019-10-11

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jingang Fang ,  Luke Ding

IPC: H01L27/12 ,  H01L29/786

Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided in the present disclosure. The display substrate includes: a substrate; a first insulation layer on the substrate; a first signal line on a side of the first insulation layer distal to the substrate; a second insulation layer covering the first signal line; and a second signal line on a side of the second insulation layer distal to the substrate, the second signal line overlapping with the first signal line at an overlap region. A concave portion is formed in the first insulation layer. At least at the overlap region, the first signal line is in the concave portion.

公开(公告)号：US11037801B2

公开(公告)日：2021-06-15

申请号：US16657062

申请日：2019-10-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingang Fang ,  Luke Ding ,  Jun Liu ,  Wei Li ,  Yang Zhang ,  Leilei Cheng ,  Dongfang Wang

IPC: H01L21/32 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/28 ,  H01L21/285

Abstract: A fabrication method of a patterned metal film layer, including: sequentially depositing a first metal layer and a photoresist on a substrate; forming a first patterned photoresist in the photoresist retaining area; etching the first metal layer, and removing a part of the first metal layer having a first thickness and located in an edge area of the photoresist retaining area and in the photoresist removing area, to form a second metal layer; processing the first patterned photoresist to form a second patterned photoresist; etching and removing a part, which is not in contact with the second patterned photoresist, of the second metal layer on the substrate to form a patterned metal film layer.

公开(公告)号：US10886410B2

公开(公告)日：2021-01-05

申请号：US16393023

申请日：2019-04-24

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yingbin Hu ,  Ce Zhao ,  Yuankui Ding ,  Wei Li ,  Wei Song ,  Luke Ding ,  Jun Liu ,  Liangchen Yan

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66

Abstract: Provided is a thin film transistor, including: a conductive light shielding layer; a metal oxide layer arranged on the light shielding layer; a buffer layer, an active layer, a gate insulating layer, a gate electrode, and an interlayer insulating layer arranged in sequence on the metal oxide layer, the interlayer insulating layer and the buffer layer comprising a first via hole and a second via hole for exposing the active layer, and a third via hole for exposing the metal oxide layer, in which a portion of the metal oxide layer exposed through the third via hole is a conductive portion, and other portions are insulative; and a source electrode and a drain electrode arranged on the interlayer insulating layer, in which the source electrode is connected to the active layer through the first via hole, and the drain electrode is connected to the active layer through the second via hole and connected to the conductive portion through the third via hole.

公开(公告)号：US10680053B1

公开(公告)日：2020-06-09

申请号：US16441422

申请日：2019-06-14

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yingbin Hu ,  Liangchen Yan ,  Ce Zhao ,  Yuankui Ding ,  Yang Zhang ,  Yongchao Huang ,  Luke Ding ,  Jun Liu

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L51/56 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.

公开(公告)号：US20200075773A1

公开(公告)日：2020-03-05

申请号：US16403860

申请日：2019-05-06

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Yang Zhang ,  Luke Ding ,  Bin Zhou ,  Haitao Wang ,  Ning Liu ,  Jingang Fang ,  Yongchao Huang ,  Liangchen Yan

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.

公开(公告)号：US09835921B2

公开(公告)日：2017-12-05

申请号：US14436004

申请日：2014-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Luke Ding ,  Wenlin Zhang ,  Xiangchun Kong ,  Feng Zhang ,  Qi Yao ,  Zhixing Zhang

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1343 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136222 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/124 ,  H01L27/127

Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a plurality of pixel unit regions each including a thin-film transistor (TFTs) and a pixel electrode. A first insulating layer provided with a first through hole and a second through hole is formed between an active layer of the TFT and the pixel electrode. A source electrode of the TFT is connected with the active layer through the first through hole. A drain electrode of the TFT is lapped onto the pixel electrode and connected with the active layer through the second through hole. The array substrate can prevent the oxidization of metal such as copper in the process of patterning a transparent conductive film.

公开(公告)号：US09653284B2

公开(公告)日：2017-05-16

申请号：US14429059

申请日：2014-07-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Zhen Liu ,  Luke Ding ,  Bin Zhang ,  Zhanfeng Cao ,  Guanbao Hui

IPC: H01L21/338 ,  H01L29/00 ,  H01L21/02 ,  H01L41/08 ,  H01L29/49 ,  H01L29/786 ,  C22C9/00 ,  H01L21/28

CPC classification number: H01L21/02304 ,  C22C9/00 ,  H01L21/28008 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606 ,  H01L41/0815

Abstract: A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor comprises: a gate electrode (11), a source electrode (15) and a drain electrode (16), and the thin film transistor further comprises a buffer layer (11) which is directly provided at one side or both sides of at least one of the gate electrode (11), the source electrode (15) and the drain electrode (16), wherein, the buffer layer (11) and at least one of the gate electrode (11), the source electrode (15) and the drain electrode (16) directly contacting the buffer layer (11) are conformal. Therefore, the adhesion between an electrode of the thin film transistor and a film layer contacting it is improved and at the same time an atom in the electrode of the thin film transistor is effectively prevented from diffusing to the film layer connected with it, and the reliability of the thin film transistor is improved and the production cost is reduced.