PATTERNING DEVICE DEFECT DETECTION SYSTEMS AND METHODS

    公开(公告)号:US20240210336A1

    公开(公告)日:2024-06-27

    申请号:US18596467

    申请日:2024-03-05

    Abstract: Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By selecting a high-contrast illumination setting, which is different than that used on a production wafer, an improved ratio of particle printability to stochastic defects can be achieved. In combination, or instead higher dose resist can be utilized. This allows longer exposure of the wafer, such that the impact of photon shot noise is reduced, also resulting in an improved ratio of particle printability to stochastic defects. As a result, the particle printability can be enhanced further without leading to an excessive amount of stochastic defects. Because of this, the number of sites, and therefore the throughput, of a charged particle inspection and analysis can be significantly improved.

    ASSESSMENT SYSTEM, METHOD OF ASSESSING
    34.
    发明公开

    公开(公告)号:US20240079205A1

    公开(公告)日:2024-03-07

    申请号:US18506923

    申请日:2023-11-10

    Abstract: Assessment systems and methods are disclosed. In one arrangement, charged particles are directed in sub-beams arranged in a multi-beam towards a sample. A plurality of control electrodes define a control lens array. Each control lens in the control lens array is aligned with a sub-beam path of a respective sub-beam of the multi-beam and configured to operate on the respective sub-beam. A plurality of objective electrodes define an objective lens array that directs the sub-beams onto a sample. Objective lenses are aligned with a sub-beam path aligned with a respective control lens. Selectable landing energies are implemented for a sub-beam of the multi-beam by applying corresponding potentials to the control electrodes and the objective electrodes. A controller is configured to select corresponding potentials so a spatial relationship between an image plane of the system and all control electrodes and objective electrodes is the same for each selectable landing energy.

    ELECTRON-OPTICAL DEVICE
    36.
    发明公开

    公开(公告)号:US20230352266A1

    公开(公告)日:2023-11-02

    申请号:US18213765

    申请日:2023-06-23

    CPC classification number: H01J37/12 H01J37/28

    Abstract: Disclosed herein is an electron-optical device, a lens assembly and an electron-optical column. The electron-optical device comprises an array substrate and an adjoining substrate and is configured to provide a potential difference between the substrates. An array of apertures is defined in each of the substrates for the path of electron beamlets. The array substrate has a thickness which is stepped so that the array substrate is thinner in the region corresponding to the array of apertures than another region of the array substrate.

    CHARGED PARTICLE ASSESSMENT TOOL, INSPECTION METHOD

    公开(公告)号:US20230230795A1

    公开(公告)日:2023-07-20

    申请号:US18123216

    申请日:2023-03-17

    CPC classification number: H01J37/12 H01J37/28 H01J2237/04756

    Abstract: A multi-beam electron-optical system for a charged-particle assessment tool, the system comprising: a plurality of control lenses, a plurality of objective lenses and a controller. The plurality of control lenses are configured to control a parameter of a respective sub-beam. The plurality of objective lenses are configured to project one of the plurality of charged-particle beams onto a sample. The controller controls the control lenses and the objective lenses so that the charged particles are incident on the sample with a desired landing energy, demagnification and/or beam opening angle.

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