公开(公告)号：US20130056349A1

公开(公告)日：2013-03-07

申请号：US13600812

申请日：2012-08-31

Applicant: Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Kenji NOMA ,  Tadashi KAI ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Katsuya NISHIYAMA ,  Koji UEDA ,  Daisuke WATANABE ,  Hiroaki YODA ,  Satoru SANO ,  Yoshihiro NISHIMURA ,  Takayuki WATANABE ,  Yuzo KATO ,  Akira UEKI

Inventor： Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Kenji NOMA ,  Tadashi KAI ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Katsuya NISHIYAMA ,  Koji UEDA ,  Daisuke WATANABE ,  Hiroaki YODA ,  Satoru SANO ,  Yoshihiro NISHIMURA ,  Takayuki WATANABE ,  Yuzo KATO ,  Akira UEKI

IPC: C23C14/08 ,  C23C14/35

CPC classification number: C23C14/082 ,  C23C14/3414 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: Provided are a sputtering target including a target main body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and a method of manufacturing a magnetic memory using the sputtering target which improves an MR ratio.

Abstract translation: 提供一种溅射靶，其包括具有MgO作为主要成分并且厚度为3mm以下的靶主体10以及使用该溅射靶的磁性存储器的制造方法，其提高MR比。

公开(公告)号：US08305801B2

公开(公告)日：2012-11-06

申请号：US13043064

申请日：2011-03-08

Applicant: Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC: G11C11/14

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

Abstract translation: 根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US08299552B2

公开(公告)日：2012-10-30

申请号：US12233100

申请日：2008-09-18

Applicant: Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadaomi Daibou ,  Tatsuya Kishi ,  Hiroaki Yoda

Inventor： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadaomi Daibou ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC: H01L29/82

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228

Abstract: A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.

Abstract translation: 磁阻元件包括具有NaCl结构并且包含在（001）面中取向的氮化物的第一下层，具有垂直于膜表面的具有L10结构的磁各向异性的第一下层上的第一磁性层，以及 含有在（001）面取向的铁磁性合金，设置在第一磁性层上的第一非磁性层和设置在第一非磁性层上并具有垂直于膜表面的磁各向异性的第二磁性层。

公开(公告)号：US20120241827A1

公开(公告)日：2012-09-27

申请号：US13210678

申请日：2011-08-16

Applicant: Tadaomi DAIBOU ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

Inventor： Tadaomi DAIBOU ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

公开(公告)号：US20120068285A1

公开(公告)日：2012-03-22

申请号：US13234720

申请日：2011-09-16

Applicant: Eiji KITAGAWA ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

Inventor： Eiji KITAGAWA ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC: H01L29/82 ,  H01L21/20

CPC classification number: H01L43/10 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

Abstract translation: 根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜 以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。 磁性膜包括非晶相和粒径为0.5nm以上的晶体。

公开(公告)号：US20120068284A1

公开(公告)日：2012-03-22

申请号：US13233420

申请日：2011-09-15

Applicant: Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

Inventor： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

IPC: H01L29/82

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/08

Abstract: According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.

Abstract translation: 根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向 磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。 第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

公开(公告)号：US20110222335A1

公开(公告)日：2011-09-15

申请号：US13112260

申请日：2011-05-20

Applicant: Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

Inventor： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC: G11C11/00 ,  H01L29/82

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

Abstract translation: 本发明提供一种自旋注入型的低电阻磁阻元件。 形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面 。 通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

公开(公告)号：US20110073970A1

公开(公告)日：2011-03-31

申请号：US12879544

申请日：2010-09-10

Applicant: Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

Inventor： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC: H01L29/82

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

Abstract translation: 根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及 在第一和第二磁性层之间的第一非磁性层。 第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。 第一磁性层具有指向垂直方向的C轴。 并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

公开(公告)号：US20100244163A1

公开(公告)日：2010-09-30

申请号：US12716582

申请日：2010-03-03

Applicant: Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

Inventor： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC: H01L43/08 ,  H01L27/115

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

Abstract translation: 磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向上具有磁各向异性的自旋极化层和设置在该磁性层的一侧的磁性层 非磁性层与设置有自旋极化层的一侧相反。 稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。 自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含 ）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

公开(公告)号：US20090251951A1

公开(公告)日：2009-10-08

申请号：US12409654

申请日：2009-03-24

Applicant: Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

Inventor： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC: G11C11/00 ,  H01L29/82 ,  G11C11/416 ,  G11C11/14

CPC classification number: H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/307 ,  H01L43/08

Abstract: A magnetoresistive element includes a foundation layer, a first magnetic layer on the foundation layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer is made of a ferromagnetic metal containing one or more elements selected from a first group consisting of Co, Fe, and Ni, and one or more elements selected from a second group consisting of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir, and Os. The foundation layer is made of a metal containing one or more elements selected from a third group consisting of Al, Ni, Co, Fe, Mn, Cr, and V.

Abstract translation: 磁阻元件包括基础层，基础层上的第一磁性层，第一磁性层上的隧道势垒层，以及隧道势垒层上的第二磁性层。 第一磁性层由含有选自Co，Fe和Ni的第一组中的一种或多种元素的铁磁性金属和选自由Cu，Ag，Au，Pd，Pt组成的第二组中的一种或多种元素 ，Ru，Rh，Ir和Os。 基底层由含有选自由Al，Ni，Co，Fe，Mn，Cr和V组成的第三组中的一种或多种元素的金属制成。