公开(公告)号：US08502331B2

公开(公告)日：2013-08-06

申请号：US13234720

申请日：2011-09-16

Applicant: Eiji Kitagawa ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

Inventor： Eiji Kitagawa ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC: H01L29/82

CPC classification number: H01L43/10 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

Abstract translation: 根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜 以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。 磁性膜包括非晶相和粒径为0.5nm以上的晶体。

公开(公告)号：US20120068139A1

公开(公告)日：2012-03-22

申请号：US13043064

申请日：2011-03-08

Applicant: Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC: H01L45/00

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

Abstract translation: 根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US20130020659A1

公开(公告)日：2013-01-24

申请号：US13628724

申请日：2012-09-27

Applicant: Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC: H01L29/82

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

Abstract translation: 根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US08547737B2

公开(公告)日：2013-10-01

申请号：US13628724

申请日：2012-09-27

Applicant: Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC: G11C11/14

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

Abstract translation: 根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US08305801B2

公开(公告)日：2012-11-06

申请号：US13043064

申请日：2011-03-08

Applicant: Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC: G11C11/14

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

Abstract translation: 根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US20120068285A1

公开(公告)日：2012-03-22

申请号：US13234720

申请日：2011-09-16

Applicant: Eiji KITAGAWA ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

Inventor： Eiji KITAGAWA ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC: H01L29/82 ,  H01L21/20

CPC classification number: H01L43/10 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

Abstract translation: 根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜 以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。 磁性膜包括非晶相和粒径为0.5nm以上的晶体。