公开(公告)号：US3828228A

公开(公告)日：1974-08-06

申请号：US33796573

申请日：1973-03-05

Applicant: HEWLETT PACKARD CO

Inventor： WONG R ,  STEWART R

IPC: H01L23/66 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099

Abstract: A package for containing a microwave transistor chip is constructed so that a surface on which the transistor chip is to be mounted is recessed below a metallized surface which serves as an electrical ground. By means of this construction, a mounted transistor chip will be positioned with its top surface just below the plane of the electrical ground surface. Thus, the leads which connect the transistor to the electrical ground surface may be very short, thereby reducing the occurrance of package parasitics, and in particular minimizing the spurious common emitter inductance. According to one embodiment of the invention, a cap is used which is in electrical contact with the electrical ground surface of the package, the cap having a recessed inner portion to assure that no contact is made between the cap and any leads which are bonded to the transistor chip and the package.

Abstract translation: 用于容纳微波晶体管芯片的封装被构造成使得其上要安装晶体管芯片的表面凹陷在用作电接地的金属化表面下方。 通过这种结构，安装的晶体管芯片将被定位成其顶表面刚好在电接地表面的平面之下。 因此，将晶体管连接到电接地表面的引线可能非常短，从而减少封装寄生效应的发生，并且特别地使寄生共发射极电感最小化。 根据本发明的一个实施例，使用与封装的电接地表面电接触的盖，所述盖具有凹入的内部部分，以确保盖和与 晶体管芯片和封装。

公开(公告)号：US3826956A

公开(公告)日：1974-07-30

申请号：US25844172

申请日：1972-05-31

Applicant: SESCOSEM

Inventor： CROSET M

IPC: H01L23/29 ,  H01L23/522 ,  H01L5/00

CPC classification number: H01L23/291 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnection system circuit integrated on the same substrate comprises: ohmic contacts made by a layer of zirconium or tantalum which ensures resistive contact and overlaid with a layer of aluminum. The interconnections are effected by two superimposed layers of zirconium or tantalum and of aluminium and the resistors are made by the exposed zirconium or tantalum.

Abstract translation: 集成在同一衬底上的互连系统电路包括：由锆或钽层制成的欧姆接触，其确保电阻接触并覆盖有铝层。

公开(公告)号：US3823351A

公开(公告)日：1974-07-09

申请号：US39473473

申请日：1973-09-06

Applicant: CARBIDEX CORP

Inventor： CHAMBERS A

IPC: H01L23/40 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L23/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semi-conductor is housed within a metallic can closed at its top and having a base flange and one or more heat sink fins. Each heat sink fin includes a flexible metallic heat conductive body 0.005 inch thick of disc-shape, centrally apertured and snugly and frictionally mounted over said can. Each fin includes a central annular flange. The fins and flanges in registry for uniform spacing.

公开(公告)号：US3816847A

公开(公告)日：1974-06-11

申请号：US36132673

申请日：1973-05-17

Applicant: NIPPON ELECTRIC CO

Inventor： NAGAO H

IPC: G01J1/02 ,  H01L31/0203 ,  H01L31/0232 ,  H01L33/58 ,  H01L33/62 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L33/483 ,  H01L31/0203 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A light-sensible semiconductor device comprises a hermetic sealing case provided with a thin planar glass plate as the top surface member. A light-sensible semiconductor chip is fixed in position within the hermetic sealing case in proximity to the planar glass plate, and a light converging lens is attached onto the planar glass plate. A holder member for the light converging lens is closely attached to the hermetic sealing case in proximity to the planar glass plate, and a light converging lens is attached onto the planar glass plate. A holding member for the light converging lens is closely attached to the hermetic sealing case and holds the lowermost peripheral portion of the light converging lens, and a member presses the holder member of the light converging lens against the hermetic sealing case to secure the close attachment of the holder member for the light converging lens onto the planar glass plate.

Abstract translation: 一种光敏半导体器件包括设置有薄平面玻璃板作为顶表面构件的气密密封壳体。 光敏半导体芯片固定在密封壳体内的位于平面玻璃板附近的适当位置，并且会聚透镜附着在平面玻璃板上。 用于聚光透镜的保持器构件紧密地附着在平面玻璃板附近的气密密封壳体上，并且会聚透镜附着在平面玻璃板上。 用于聚光透镜的保持构件紧密地连接到气密密封壳体并且保持聚光透镜的最下周边部分，并且构件将聚光透镜的保持构件压靠在气密密封壳体上以确保紧密附着 用于聚光透镜的保持器构件到平面玻璃板上。

公开(公告)号：US3811075A

公开(公告)日：1974-05-14

申请号：US25615772

申请日：1972-05-23

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： SHIGA K

IPC: H01L29/82 ,  H01L5/00 ,  H01L19/00

CPC classification number: H01L29/82

Abstract: A two terminal positive feedback magnetic sensitive semiconductor device having P-type regions and N-type regions in which a channel is formed between PN junctions. The width of the channel is controlled by Lorenz''s force in response to the strength of the magnetic field and as a result an input current passing through the channel is controlled.

Abstract translation: 具有P型区域和N型区域的两端正反馈磁敏半导体器件，其中在PN结之间形成通道。 通过响应于磁场的强度的洛伦兹的力来控制通道的宽度，并且因此控制通过通道的输入电流。

公开(公告)号：US3808474A

公开(公告)日：1974-04-30

申请号：US31101672

申请日：1972-11-30

Applicant: TEXAS INSTRUMENTS INC

Inventor： COOKE H ,  EMERY F

IPC: H01L21/60 ,  H01L23/66 ,  H01L5/00

CPC classification number: H01L24/85 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/49109 ,  H01L2224/49175 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15747 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A package and mounting suitable for microwave transistors wherein lead inductances are substantially reduced and heat dissipation is improved. A semiconductor substrate having p-n junctions at one of its surfaces has its opposite surface secured to a thermally conductive electrically insulating member on a thermally conductive electrically conductive substrate which acts as the common input to the device. The member is embedded in and partially surrounded by the electrically conductive substrate in a manner that increases the interface surface area of contact between the heat dissipating member and the thermally conductive substrate and shortens the lengths of wire necessary to make connections to the substrate. Parallel connecting paths to each side of the p-n junctions extend in opposite directions over the sides of the semiconductor substrate and are interleaved on each side of the semiconductor substrate to substantially reduce lead inductances by means of the bucking effects of the generated magnetic fields. The electrically conducting substrate has a portion which is positioned intermediate to the input and output leads to the device in a substantially common plane and effectively provides shielding for further reducing lead inductances.

Abstract translation: 一种适用于微波晶体管的封装和安装件，其中引线电感被显着地减少并且散热得到改善。 在其一个表面上具有p-n结的半导体衬底的相对表面固定在作为该器件的公共输入的导热导电衬底上的导热电绝缘构件上。 该构件以增加散热构件和导热衬底之间的接触界面表面积的方式嵌入并部分地被导电衬底包围，并缩短了与衬底连接所需的电线长度。 在p-n结的每一侧的平行连接路径在半导体衬底的侧面上以相反的方向延伸，并且在半导体衬底的每一侧交错，以通过所产生的磁场的屈曲效应来显着降低引线电感。 导电衬底具有位于输入和输出中间的部分，并且输出到基本上共同的平面中的器件，并且有效地提供用于进一步减小引线电感的屏蔽。

公开(公告)号：US3805125A

公开(公告)日：1974-04-16

申请号：US34666973

申请日：1973-03-30

Applicant: RCA CORP

Inventor： STERZER F

IPC: H01L47/02 ,  H03K3/357 ,  H01L5/00 ,  G11C11/40

CPC classification number: H01L47/02 ,  H03K3/357

Abstract: The memory element makes use of two transferred electron devices, at least one of which is notched. The transferred electron devices are connected in a feedback arrangement in order to trigger one another. The memory element can be used for processing extremely high speed signals.

Abstract translation: 存储元件利用两个转移的电子器件，其中至少一个是缺口的。 转移的电子器件以反馈布置连接以便彼此触发。 存储元件可用于处理极高速度信号。

公开(公告)号：US3801881A

公开(公告)日：1974-04-02

申请号：US3801881D

申请日：1972-10-24

Applicant: NIPPON ELECTRIC CO

Inventor： ANAZAWA S

IPC: H01L21/60 ,  H01L23/055 ,  H01L23/057 ,  H01L23/498 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L24/85 ,  H01L23/055 ,  H01L23/057 ,  H01L23/49844 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/16195 ,  H01L2924/3011 ,  H01L2924/351 ,  Y10T29/4913 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A packaged semiconductor device comprises a housing having a ceramic base member in the form of a rectangle. The base member includes a ceramic sheet having rectangular regions orthogonally contiguous to one another corresponding to the base member rectangle. A plurality of first conductors and a substantially equal number of second conductors are metallized on the ceramic sheet. Each first conductor has an area at the substantial center of each rectangular region and an arm extending from that area parallel to one of the common diagonals of the region into a contiguous region and substantially bisecting the common boundary of the two contiguous regions. Each second conductor extends parallel to a diagonal traversing the one diagonal by a substantially equal amount into two contiguous regions disposed orthogonal to the first-mentioned two contiguous regions and substantially bisecting the common boundary of the last-mentioned two contiguous regions.

Abstract translation: 封装的半导体器件包括具有矩形形式的陶瓷基底构件的壳体。 所述基座部件包括陶瓷片，所述陶瓷片具有与所述基部构件矩形对应的彼此正交相邻的矩形区域。 多个第一导体和基本上相等数量的第二导体在陶瓷片上金属化。 每个第一导体具有在每个矩形区域的基本中心处的区域和从该区域的平行于该区域的公共对角线之一的区域延伸到连续区域中并且基本上将两个连续区域的公共边界基本上平分的臂。 每个第二导体平行于穿过一个对角线的对角线延伸大致相等的量，与两个连续的区域垂直地布置，并且基本上平分最后提到的两个连续区域的公共边界。

公开(公告)号：US3792318A

公开(公告)日：1974-02-12

申请号：US3792318D

申请日：1973-01-30

Applicant: SIEMENS AG

Inventor： FRIES P ,  MORITZ K

IPC: F28D15/02 ,  H01L23/427 ,  H01L23/48 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L24/72 ,  F28D15/0275 ,  F28D15/04 ,  H01L23/427 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/1301 ,  H01L2924/00

Abstract: An improved cooling apparatus for flat semiconductors in which the semiconductor is held between two base members each having one or more heat pipes inserted in holes formed therein. Heat is conducted by the vaporized working fluid in the heat pipe from the end inserted into the base member to other end which contains cooling fins which condense the vapor, which in liquid form then returns by capillary action through a wick. Also shown is an embodiment which permits locating the cooling fins remote from the semiconductor to take advantage of more favorable cooling conditions.

Abstract translation: 一种用于平板半导体的改进的冷却装置，其中半导体被保持在两个基座构件之间，每个基座构件具有插入其中形成的孔中的一个或多个热管。 热量通过热管中的蒸发的工作流体从插入基座部件的一端进入另一端，其另一端包含冷凝的冷却翅片，该冷却片冷凝蒸气，然后以液体形式通过毛细管作用通过灯芯返回。

公开(公告)号：US3790865A

公开(公告)日：1974-02-05

申请号：US3790865D

申请日：1971-08-02

Applicant: SEMIKRON GLEICHRICHTERBAU

Inventor： TOVAR T

IPC: H01L23/48 ,  H01L25/03 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L23/48 ,  H01L25/03 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor high voltage rectifier including a plurality of strips of insulating material, each strip containing a plurality of openings. One of the strips contains a semiconductor wafer within each of its plurality of openings while, two of the strips contain a conducting body within each of their openings. The strips are assembled as a unit by two end caps so that the wafers are bounded on each side by a strip containing the conducting bodies. The assembly is such that the conducting bodies each engage a conducting surface of a wafer. A series circuit is established by connecting each successive pair of conducting bodies by conducting strips and the two conducting caps with the conducting bodies closest thereto by conducting strips, with the caps constituting the external terminals of the rectifier.

Abstract translation: 包括多个绝缘材料条的半导体高压整流器，每个条带包含多个开口。 其中一个条带在其多个开口的每一个中包含半导体晶片，而两个条带在其每个开口内都包含导电体。 条带通过两个端盖组装成一个单元，使得晶片在每一侧由包含导电体的条带限定。 该组件使得导电体各自接合晶片的导电表面。 通过导电条连接每个连续的一对导电体并通过导电条将导电体与最靠近导电体的两个导电帽连接起来形成串联电路，盖构成整流器的外部端子。