公开(公告)号：US3826956A

公开(公告)日：1974-07-30

申请号：US25844172

申请日：1972-05-31

Applicant: SESCOSEM

Inventor： CROSET M

IPC: H01L23/29 ,  H01L23/522 ,  H01L5/00

CPC classification number: H01L23/291 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnection system circuit integrated on the same substrate comprises: ohmic contacts made by a layer of zirconium or tantalum which ensures resistive contact and overlaid with a layer of aluminum. The interconnections are effected by two superimposed layers of zirconium or tantalum and of aluminium and the resistors are made by the exposed zirconium or tantalum.

Abstract translation: 集成在同一衬底上的互连系统电路包括：由锆或钽层制成的欧姆接触，其确保电阻接触并覆盖有铝层。

公开(公告)号：US3737341A

公开(公告)日：1973-06-05

申请号：US3737341D

申请日：1970-12-29

Applicant: SESCOSEM

Inventor： CROSET M ,  NOUAILLES N

IPC: H01L21/00 ,  H01L21/316 ,  C23F1/02 ,  C23F7/02

CPC classification number: H01L21/31683 ,  H01L21/00 ,  Y10T428/24802

Abstract: THE INVENTION RELATES TO A METHOD OF DEPOSITING A DIELECTRIC FILM OF PREDETERMINED SHAPE, UPON A SEMICONDUCTOR SUBSTRATE.

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