Invention Grant
- Patent Title: Semiconductor memory element
- Patent Title (中): 半导体存储元件
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Application No.: US34666973Application Date: 1973-03-30
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Publication No.: US3805125APublication Date: 1974-04-16
- Inventor: STERZER F
- Applicant: RCA CORP
- Assignee: RCA Corp
- Current Assignee: RCA Corp
- Priority: US34666973 1973-03-30
- Main IPC: H01L47/02
- IPC: H01L47/02 ; H03K3/357 ; H01L5/00 ; G11C11/40
Abstract:
The memory element makes use of two transferred electron devices, at least one of which is notched. The transferred electron devices are connected in a feedback arrangement in order to trigger one another. The memory element can be used for processing extremely high speed signals.
Information query
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