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    METHOD OF PRODUCING APERTURE MEMBER
    21.
    发明申请
    METHOD OF PRODUCING APERTURE MEMBER 有权
    生产APERTURE会员的方法

    公开(公告)号：US20160056046A1

    公开(公告)日：2016-02-25

    申请号：US14732001

    申请日：2015-06-05

    Applicant: NuFlare Technology, Inc.

    Inventor： Takashi KAMIKUBO

    IPC: H01L21/308 ,  H01L21/84 ,  H01L21/306 ,  H01L21/78

    CPC classification number: H01L21/84 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/0451 ,  H01J2237/31776

    Abstract: In one embodiment, an aperture member producing method includes applying a charged particle beam to a plurality of chip areas on a first substrate while changing a writing condition to write a first pattern corresponding to an aperture opening, processing the first substrate based on the written first pattern to form a second pattern, cutting out a chip area provided with the second pattern having desired accuracy from the first substrate to produce a template, allowing the template to come into contact with a resist overlying a front surface of a second substrate, separating the template from the hardened resist to pattern the resist with a transfer pattern, processing the second substrate using the transfer pattern as a mask to form a first recess, and etching a rear surface of the second substrate to form a second recess communicating with the first recess.

    Abstract translation: 在一个实施例中，一种孔径构件的制造方法包括：在改变写入条件的同时，向第一衬底上的多个芯片区域施加带电粒子束以写入对应于孔径开口的第一图案，基于所写入的第一衬底来处理第一衬底 形成第二图案，从第一基板切出具有期望精度的第二图案的芯片区域以产生模板，从而允许模板与覆盖在第二基板的前表面上的抗蚀剂接触， 模板，用转印图案对抗蚀剂进行图案化，使用转印图案作为掩模处理第二基板以形成第一凹部，并且蚀刻第二基板的后表面以形成与第一凹部连通的第二凹部 。

    Charged particle beam apparatus
    22.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号：US09208995B2

    公开(公告)日：2015-12-08

    申请号：US14379291

    申请日：2013-02-15

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yusuke Ominami ,  Takashi Ohshima ,  Hiroyuki Ito ,  Mitsugu Sato ,  Sukehiro Ito

    IPC: G21K5/00 ,  H01J37/28 ,  H01J37/16 ,  H01J37/18 ,  H01J37/09

    CPC classification number: H01J37/28 ,  H01J37/09 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/0451 ,  H01J2237/06341 ,  H01J2237/10 ,  H01J2237/1405 ,  H01J2237/164 ,  H01J2237/2608 ,  H01J2237/2801

    Abstract: Provided is a charged particle beam apparatus (111) to and from which a diaphragm (101) can be easily attached and detached, and in which a sample (6) can be arranged under vacuum and under high pressure. The charged particle beam apparatus includes: a lens barrel (3) holding a charged particle source (110) and an electron optical system (1,2,7); a first housing (4) connected to the lens barrel (3); a second housing (100) recessed to inside the first housing (4); a first diaphragm (10) separating the space inside the lens barrel (3) and the space inside the first housing (4), and through which the charged particle beam passes; a second diaphragm (101) separating the spaces inside and outside the recessed section (100a) in the second housing (100), and through which the charged particle beam passes; and a pipe (23) connected to a third housing (22) accommodating the charged particle source (110). The first diaphragm (10) is attached to the pipe (23), and the pipe (23) and the third housing (22) can be attached to and detached from the lens barrel (3) in the direction of the optical axis (30). A space (105) surrounded by the first housing (4) and the second housing (100) is depressurized, and the sample (6) arranged inside the recessed section (100a) is irradiated with a charged particle beam.

    Abstract translation: 提供了一种带电粒子束装置（111），隔膜（101）可以从其中容易地附接和拆卸，并且其中样品（6）可以在真空和高压下布置。 带电粒子束装置包括：保持带电粒子源（110）和电子光学系统（1,2,7）的镜筒（3）; 连接到镜筒（3）的第一壳体（4）; 第二壳体（100），其凹入到所述第一壳体（4）的内部; 分离透镜筒（3）内的空间与第一壳体（4）内的空间的第一隔膜（10），带电粒子束通过该第一隔膜 第二隔膜（101），其分离所述第二壳体（100）中的所述凹部（100a）的内部和外部的空间，并且所述带电粒子束穿过所述第二隔膜; 以及连接到容纳所述带电粒子源（110）的第三壳体（22）的管道（23）。 第一隔膜（10）附接到管道（23），并且管道（23）和第三壳体（22）可以沿着光轴（30）的方向附接到镜筒（3）并从镜筒 ）。 由第一壳体（4）和第二壳体（100）围绕的空间（105）被减压，并且将配置在凹部（100a）内部的样品（6）照射带电粒子束。

    CHARGED PARTICLE BEAM APPARATUS
    23.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS 有权
    充电颗粒光束装置

    公开(公告)号：US20150014530A1

    公开(公告)日：2015-01-15

    申请号：US14379291

    申请日：2013-02-15

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yusuke Ominami ,  Takashi Ohshima ,  Hiroyuki Ito ,  Mitsugu Sato ,  Sukehiro Ito

    IPC: H01J37/28 ,  H01J37/09 ,  H01J37/18

    CPC classification number: H01J37/28 ,  H01J37/09 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/0451 ,  H01J2237/06341 ,  H01J2237/10 ,  H01J2237/1405 ,  H01J2237/164 ,  H01J2237/2608 ,  H01J2237/2801

    Abstract: Provided is a charged particle beam apparatus (111) to and from which a diaphragm (101) can be easily attached and detached, and in which a sample (6) can be arranged under vacuum and under high pressure. The charged particle beam apparatus includes: a lens barrel (3) holding a charged particle source (110) and an electron optical system (1,2,7); a first housing (4) connected to the lens barrel (3); a second housing (100) recessed to inside the first housing (4); a first diaphragm (10) separating the space inside the lens barrel (3) and the space inside the first housing (4), and through which the charged particle beam passes; a second diaphragm (101) separating the spaces inside and outside the recessed section (100a) in the second housing (100), and through which the charged particle beam passes; and a pipe (23) connected to a third housing (22) accommodating the charged particle source (110). The first diaphragm (10) is attached to the pipe (23), and the pipe (23) and the third housing (22) can be attached to and detached from the lens barrel (3) in the direction of the optical axis (30). A space (105) surrounded by the first housing (4) and the second housing (100) is depressurized, and the sample (6) arranged inside the recessed section (100a) is irradiated with a charged particle beam.

    Abstract translation: 提供了一种带电粒子束装置（111），隔膜（101）可以从其中容易地附接和拆卸，并且其中样品（6）可以在真空和高压下布置。 带电粒子束装置包括：保持带电粒子源（110）和电子光学系统（1,2,7）的镜筒（3）; 连接到镜筒（3）的第一壳体（4）; 第二壳体（100），其凹入到所述第一壳体（4）的内部; 分离透镜筒（3）内的空间与第一壳体（4）内的空间的第一隔膜（10），带电粒子束通过该第一隔膜 第二隔膜（101），其分离所述第二壳体（100）中的所述凹部（100a）的内部和外部的空间，并且所述带电粒子束通过所述第二隔膜; 以及连接到容纳所述带电粒子源（110）的第三壳体（22）的管道（23）。 第一隔膜（10）附接到管道（23），并且管道（23）和第三壳体（22）可以沿着光轴（30）的方向附接到镜筒（3）并从镜筒 ）。 由第一壳体（4）和第二壳体（100）围绕的空间（105）被减压，并且将配置在凹部（100a）内部的样品（6）照射带电粒子束。

    Ion implanting apparatus for forming ion beam shape
    24.
    发明授权
    Ion implanting apparatus for forming ion beam shape 有权
    用于形成离子束形状的离子注入装置

    公开(公告)号：US07791040B2

    公开(公告)日：2010-09-07

    申请号：US12219526

    申请日：2008-07-23

    Applicant: Minoru Ikeda ,  Toshio Iida

    Inventor： Minoru Ikeda ,  Toshio Iida

    IPC: G21K5/04

    CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J2237/0451 ,  H01J2237/31701

    Abstract: Aimed at providing an ion implantation apparatus elongated in period over which failure of a target work, due to deposition and release of ion species typically to and from the inner surface of a through-hole shaping a beam shape of ion beam, may be avoidable, reduced in frequency of exchange of an aperture component, and consequently improved in productivity, an aperture component shaping a beam shape has a taper opposed to the ion beam, in at least a part of inner surface of at least the through-hole, and has a thick thermal-sprayed film formed so as to cover the inner surface and therearound of the through-hole.

    Abstract translation: 旨在提供一种延长的离子注入装置，其中由于离子种类的沉积和释放通常到达和离开形成离子束的束形状的通孔的内表面，在该时间段内可以避免目标工作的故障， 降低孔径分量的交换频率，从而提高生产率，成形波束形状的孔径部件在至少通孔的内表面的至少一部分中具有与离子束相对的锥形，并且具有 形成为覆盖通孔的内表面和周围的厚的热喷涂膜。

    Ion source
    25.
    发明授权
    Ion source 有权
    离子源

    公开(公告)号：US07767977B1

    公开(公告)日：2010-08-03

    申请号：US12417929

    申请日：2009-04-03

    Applicant: Ludovic Godet ,  Svetlana Radovanov ,  Timothy J. Miller

    Inventor： Ludovic Godet ,  Svetlana Radovanov ,  Timothy J. Miller

    IPC: H01J49/10 ,  H01J37/08 ,  H01J23/06

    CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/09 ,  H01J2237/0451 ,  H01J2237/0453 ,  H01J2237/0456 ,  H01J2237/065 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/31 ,  H01J2237/31701 ,  Y10S438/961

    Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

    Abstract translation: 离子源包括具有提取孔的电弧室和等离子体鞘调制器。 等离子体鞘调制器被配置为控制等离子体和靠近提取孔的等离子体鞘之间的边界的形状。 等离子体鞘调制器可以包括位于电弧室中的一对绝缘体，并且间隔开位于靠近提取孔的间隙。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。

    METHOD AND SYSTEM FOR MULTI-PASS CORRECTION OF SUBSTRATE DEFECTS
    26.
    发明申请
    METHOD AND SYSTEM FOR MULTI-PASS CORRECTION OF SUBSTRATE DEFECTS 有权
    基板缺陷多通道校正方法与系统

    公开(公告)号：US20090084759A1

    公开(公告)日：2009-04-02

    申请号：US11864461

    申请日：2007-09-28

    Applicant: Ruairidh MacCRIMMON ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

    Inventor： Ruairidh MacCRIMMON ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

    IPC: C23F1/00

    CPC classification number: H01J37/3023 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/0451 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/0812 ,  H01J2237/20228 ,  H01J2237/2485 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30488

    Abstract: A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.

    Abstract translation: 描述了在衬底上的位置特定处理的方法和系统。 该方法包括获取衬底的度量数据，以及计算用于调整衬底上度量数据的第一区域的校正数据。 此后，建立了用于处理高梯度区域的第一气体簇离子束（GCIB），并且根据校正数据将第一GCIB施加到衬底。 该方法还包括可选地在应用第一GCIB之后获取第二计量数据，以及计算第二校正数据，用于调整测量数据的第二区域或第二测量数据，或二者在衬底上。 此后，建立了用于处理第二区域的第二气体簇离子束（GCIB），并且根据第二校正数据将第二GCIB施加到衬底。

    Shaped apertures in an ion implanter
    27.
    发明申请
    Shaped apertures in an ion implanter 审中-公开
    离子注入机中的成形孔

    公开(公告)号：US20080099696A1

    公开(公告)日：2008-05-01

    申请号：US11589767

    申请日：2006-10-31

    Applicant: Geoffrey Ryding ,  Takao Sakase ,  Marvin Farley ,  Steven Hays

    Inventor： Geoffrey Ryding ,  Takao Sakase ,  Marvin Farley ,  Steven Hays

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/0451

    Abstract: This invention relates to shaped apertures in an ion implanter that may act to clip an ion beam and so adversely affect uniformity of an implant. In particular, the present invention finds application in ion implanters that employ scanning of a substrate to be implanted relative to the ion beam such that the ion beam traces a raster pattern over the substrate. An ion implanter is provided comprising: a substrate scanner arranged to scan a substrate repeatedly through an ion beam in a scanning direction substantially transverse to the ion beam path, thereby forming a series of scan lines across the substrate; and an aperture plate having provided therein an aperture positioned on the ion beam path upstream of the substrate scanner, and wherein the aperture is defined in part by an inwardly-facing projection.

    Abstract translation: 本发明涉及离子注入机中的成形孔，其可以用于夹住离子束并且对输入的均匀性产生不利影响。 特别地，本发明应用于使用相对于离子束进行植入的衬底的扫描的离子注入器，使得离子束在衬底上追踪光栅图案。 提供了一种离子注入机，包括：衬底扫描器，其布置成在基本上横向于离子束路径的扫描方向上反复扫描基板通过离子束，从而在衬底上形成一系列扫描线; 以及孔板，其中设置有位于所述基板扫描器上游的离子束路径上的孔，并且其中所述孔部分地由向内的突起限定。

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