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    TE-BASED THERMOELECTRIC MATERIAL HAVING COMPLEX CRYSTAL STRUCTURE BY ADDITION OF INTERSTITIAL DOPANT
    22.
    发明申请
    TE-BASED THERMOELECTRIC MATERIAL HAVING COMPLEX CRYSTAL STRUCTURE BY ADDITION OF INTERSTITIAL DOPANT 审中-公开
    具有复合晶体结构的基于TE的热电材料通过添加间接掺杂物

    公开(公告)号：US20150372212A1

    公开(公告)日：2015-12-24

    申请号：US14473029

    申请日：2014-08-29

    申请人： Korea Electrotechnology Research Institute

    发明人： Su Dong Park ,  Bong Seo Kim ,  Bok Ki Min ,  Min Wook Oh ,  Jae Ki Lee ,  Hee Woong Lee ,  Gi Jeong Kong

    IPC分类号： H01L35/16 ,  C30B29/46 ,  C30B29/68

    CPC分类号： H01L35/16 ,  C30B29/46 ,  H01L35/34

    摘要： This invention relates to a Te-based thermoelectric material having stacking faults by addition of an interstitial dopant, including unit cells configured such that A-B-A-C-A elements are stacked to five layers, in which A element of a terminal of a unit cell and A element of a terminal of another unit cell are repeatedly stacked by a van der Waals interaction, wherein an interstitial element as the dopant is located at an interstitial position between the repeatedly stacked A elements adjacent to each other, thus generating stacking faults of the repeatedly stacked unit cells to thereby form a twin as well as a complex crystal structure different from the unit cells (where A is Te or Se, B is Bi or Sb, and C is Bi or Sb).

    摘要翻译： 本发明涉及一种通过添加间隙掺杂物而具有堆垛层错的Te基热电材料，包括配置为使ABACA元件堆叠成五层的单元电池，其中单元电池端子的A元件和 另一个晶胞的端子通过范德华相互作用重复堆叠，其中作为掺杂剂的间隙元素位于彼此相邻的重复堆叠的A元件之间的间隙位置，从而产生重复堆叠的单元电池的堆垛层错 从而形成双晶体以及不同于晶胞的复合晶体结构（其中A为Te或Se，B为Bi或Sb，C为Bi或Sb）。

    RECHARGEABLE SOLID STATE NEUTRON DETECTOR AND VISIBLE RADIATION INDICATOR
    23.
    发明申请
    RECHARGEABLE SOLID STATE NEUTRON DETECTOR AND VISIBLE RADIATION INDICATOR 有权
    可充电固态中性探测器和可见辐射指示器

    公开(公告)号：US20150285924A1

    公开(公告)日：2015-10-08

    申请号：US14729715

    申请日：2015-06-03

    申请人： Ashley C. STOWE ,  Brenden WIGGINS ,  Arnold BURGER

    发明人： Ashley C. STOWE ,  Brenden WIGGINS ,  Arnold BURGER

    IPC分类号： G01T3/00 ,  C30B29/46 ,  H01L21/67 ,  C30B33/02

    CPC分类号： G01T3/00 ,  C30B11/12 ,  C30B29/46 ,  C30B33/02 ,  H01L21/67098

    摘要： A radiation detection device, including: a support structure; and a chalcopyrite crystal coupled to the support structure; wherein, when the chalcopyrite crystal is exposed to radiation, a visible spectrum of the chalcopyrite crystal changes from an initial color to a modified color. The visible spectrum of the chalcopyrite crystal is changed back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below a melting point of the chalcopyrite crystal over time. The chalcopyrite crystal is optionally a 6LiInSe2 crystal. The radiation is comprised of neutrons that decrease the 6Li concentration of the chalcopyrite crystal via a 6Li(n,α) reaction. The initial color is yellow and the modified color is one of orange and red. The annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs.

    摘要翻译： 一种放射线检测装置，包括：支撑结构; 和连接到所述支撑结构的黄铜矿晶体; 其中，当黄铜矿晶体暴露于辐射时，黄铜矿晶体的可见光谱从初始颜色变为修饰颜色。 随着时间的推移，黄铜矿晶体的可见光谱通过在黄铜矿晶体的熔点以下的高温下退火黄铜矿晶体，从改色变为初始颜色。 黄铜矿晶体任选是6LiInSe2晶体。 辐射由通过6Li（n，α）反应降低黄铜矿晶体的6Li浓度的中子组成。 初始颜色为黄色，修饰颜色为橙色和红色。 退火温度在约450℃至约650℃之间，退火时间为约12小时至约36小时。

    BULK SEMICONDUCTING SCINTILLATOR DEVICE FOR RADIATION DETECTION
    26.
    发明申请
    BULK SEMICONDUCTING SCINTILLATOR DEVICE FOR RADIATION DETECTION 有权
    用于辐射检测的大容量半导体扫描仪器件

    公开(公告)号：US20140209805A1

    公开(公告)日：2014-07-31

    申请号：US14230822

    申请日：2014-03-31

    申请人： Ashley C. Stowe ,  Arnold Burger ,  Michael Groza

    发明人： Ashley C. Stowe ,  Arnold Burger ,  Michael Groza

    IPC分类号： G01T1/202 ,  G01T3/08

    CPC分类号： G01T1/2023 ,  C30B29/46 ,  G01T3/08

    摘要： A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

    摘要翻译： 一种散装半导体闪烁体装置，包括：一般组成为Li-III-VI2的含Li半导体化合物，其中III为III族元素，VI为VI族元素; 其中所述含Li半导体化合物用于第一模式和第二模式中的一个或多个，其中：在所述第一模式中，所述含Li半导体化合物耦合到可在电位 - 在存在中子的含Li半导体化合物中，并且含Li的半导体化合物也耦合到电流检测电子器件，其可操作以检测含Li半导体化合物中的对应电流; 并且在第二模式中，含Li半导体化合物耦合到可在中子存在的情况下检测在含Li半导体化合物中产生的光子的光电检测器。

    QUATERNARY CHALCOGENIDE WAFERS
    29.
    发明申请
    QUATERNARY CHALCOGENIDE WAFERS 失效
    季刊CHALCOGENIDE WAFERS

    公开(公告)号：US20120145970A1

    公开(公告)日：2012-06-14

    申请号：US12963979

    申请日：2010-12-09

    申请人： ALEX SERGEY IONKIN ,  BRIAN M. FISH

    发明人： ALEX SERGEY IONKIN ,  BRIAN M. FISH

    IPC分类号： H01B1/20 ,  H01L21/34

    CPC分类号： C30B29/46 ,  C30B9/00 ,  C30B9/12

    摘要： Disclosed herein are processes for making quaternary chalcogenide wafers. The process comprises heating a mixture of quaternary chalcogenide crystals and flux and then cooling the mixture to form a solidified mixture comprising ingots of quaternary chalcogenide and flux. The process also comprises isolating one or more ingots of quaternary chalcogenide from the solidified mixture and mounting at least one ingot in a polymer binder to form a quaternary chalcogenide-polymer composite. The process also comprises optionally slicing the quaternary chalcogenide-polymer composite to form one or more quaternary chalcogenide-polymer composite wafers. The quaternary chalcogenide wafers are useful for forming solar cells.

    摘要翻译： 本文公开了制备四元硫族化物晶片的方法。 该方法包括加热季硫族化物晶体和助熔剂的混合物，然后冷却混合物以形成包含四元硫族化物和熔剂锭的固化混合物。 该方法还包括从凝固的混合物中分离一个或多个四元硫属化物锭，并将至少一个锭安装在聚合物粘合剂中以形成季硫族化合物 - 聚合物复合材料。 该方法还包括任选地将季硫族化合物 - 聚合物复合物切片以形成一种或多种季硫族化合物 - 聚合物复合晶片。 四元硫族化物晶片可用于形成太阳能电池。

    Manufacture of cadmium mercury telluride
    30.
    发明授权
    Manufacture of cadmium mercury telluride 有权
    碲化汞制造

    公开(公告)号：US08021914B2

    公开(公告)日：2011-09-20

    申请号：US10594393

    申请日：2005-04-05

    申请人： Janet E Hails ,  Jean Giess ,  John W Cairns ,  Andrew Graham ,  Louise Buckle ,  David J Hall ,  Neil T Gordon

    发明人： Janet E Hails ,  Jean Giess ,  John W Cairns ,  Andrew Graham ,  Louise Buckle ,  David J Hall ,  Neil T Gordon

    IPC分类号： H01L21/00

    CPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/46 ,  H01L31/1032 ,  H01L31/1832

    摘要： A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between 0 and 1 inclusive, is grown by metal organic vapour phase epitaxy (MOVPE). The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffer layers provide the correct orientation for later MOVPE growth of CMT and also prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.

    摘要翻译： 公开了一种制造碲化汞镉（CMT）的方法。 该方法包括通过分子束外延（MBE）在衬底上生长一个或多个缓冲层。 随后，通过金属有机气相外延（MOVPE）生长至少一层碲化汞镉Hg（其中x在0和1之间）在0和1之间的Hg1-xCdxTe。 使用MBE来生长缓冲层可以使一系列底物用于CMT生长。 MBE缓冲层为CMT的后续MOVPE生长提供了正确的方向，并且还防止了在MOVPE期间CMT的化学污染和基材的侵蚀。 该方法还允许通过结晶CMT层和/或钝化层的进一步MOVPE生长来执行CMT层的器件处理。 本发明还涉及通过该方法形成的新装置。