公开(公告)号：US20110151676A1

公开(公告)日：2011-06-23

申请号：US13039724

申请日：2011-03-03

Applicant: Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

Inventor： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

IPC: H01L21/31

CPC classification number: H01L21/67253 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76232

Abstract: A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

Abstract translation: 一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。 第一电介质层形成在特征上并且在至少一个空间内。 第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。 第一固体产物被分解以基本上除去第一介电层的部分。 形成第二电介质层以基本上填充至少一个空间。

公开(公告)号：US20110135962A1

公开(公告)日：2011-06-09

申请号：US12634480

申请日：2009-12-09

Applicant: LIUBO HONG ,  Aron Pentek ,  Yi Zheng

Inventor： LIUBO HONG ,  Aron Pentek ,  Yi Zheng

IPC: G11B5/33

CPC classification number: G11B5/1278 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T428/1171

Abstract: Methods for fabrication of tapered magnetic poles with a non-magnetic front bump layer. A magnetic pole may have a tapered surface at or near and air bearing surface (ABS), wherein a thickness of the write pole increases in a direction away from the ABS. A non-magnetic front bump layer may be formed on the tapered surface of the magnetic pole and away from the ABS. The front bump layer may increase the separation distance between a shield layer and the magnetic pole near the tapered surface, thereby improving the performance of the write head.

Abstract translation: 用非磁性前凸块层制造锥形磁极的方法。 磁极可以在空气轴承表面（ABS）处或附近具有锥形表面，其中写入极的厚度在远离ABS的方向上增加。 可以在磁极的锥形表面上远离ABS形成非磁性前凸块层。 前凸块层可以增加在锥形表面附近的屏蔽层和磁极之间的间隔距离，从而提高写入头的性能。

公开(公告)号：US20110120878A1

公开(公告)日：2011-05-26

申请号：US12623206

申请日：2009-11-20

Applicant: Liubo Hong ,  Wen-Chien D. Hsiao ,  Yimin Hsu ,  Yi Zheng

Inventor： Liubo Hong ,  Wen-Chien D. Hsiao ,  Yimin Hsu ,  Yi Zheng

IPC: C23C14/34 ,  C25D5/34

CPC classification number: G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49048

Abstract: A method for manufacturing a magnetic write head having a write pole and a trailing wrap around magnetic shield, and having a non-magnetic step layer and a non-magnetic bump to provide additional spacing between the write pole and the trailing wrap around shield at a location removed from the air bearing surface. A magnetic write pole material is deposited on a substrate and a non-magnetic step layer is deposited over the write pole. A reactive ion milling can he used to pattern the non-magnetic step layer to have a front edge that is located a desired distance from an air hearing surface. A patterning and ion milling process is then performed to define a write pole, and then a layer of alumina is deposited and ion milled to from a tapered, non-magnetic bump at the front the non-magnetic step layer.

Abstract translation: 一种用于制造磁性写入头的方法，该写入磁头在磁屏蔽周围具有写入磁极和尾部缠绕，并且具有非磁性阶跃层和非磁性凸起，以在写入磁极和屏蔽之间的后续缠绕在一个 位置从空气轴承表面移除。 磁性写入极材料沉积在衬底上，非磁性步骤层沉积在写入极上。 他可以使用反应离子研磨来对非磁性阶梯层进行图案化以具有位于距离空气听力表面所需距离的前边缘。 然后进行图形化和离子研磨处理以限定写入极，然后沉积氧化铝层，并从非磁性阶梯层前面的锥形非磁性凸块离子研磨。

公开(公告)号：US20110063950A1

公开(公告)日：2011-03-17

申请号：US12992228

申请日：2009-05-15

Applicant: James F. Greenleaf ,  Shigao Chen ,  Yi Zheng ,  Aiping Yao

Inventor： James F. Greenleaf ,  Shigao Chen ,  Yi Zheng ,  Aiping Yao

IPC: G01S15/88

CPC classification number: A61B8/485 ,  G01S7/52038

Abstract: A method for measuring a mechanical property of a subject includes using an ultrasonic transducer to apply ultrasonic vibration pulses to a vibration origin in the subject in an on-off time sequence in order to impart a harmonic motion at a prescribed frequency to the subject, and when the vibration pulses are off, preferably using the same transducer to apply ultrasonic detection pulses to a motion detection point and to receive echo signals therefrom in order to sense the harmonic motion on the subject at the motion detection point The ultrasonic detection pulses are interspersed with the vibration pulses and can be applied in a non-uniform manner From the received ultrasonic echo signals, a harmonic signal is detected and a characteristic such as amplitude or phase of the detected harmonic signal is calculated using a Kalman filter or interpolation.

Abstract translation: 用于测量受试者的机械性质的方法包括使用超声波换能器以开关时间顺序将超声波振动脉冲施加到被检体中的振动起点，以向受检者施加规定频率的谐波运动，以及 当振动脉冲关闭时，优选地使用相同的换能器将超声波检测脉冲施加到运动检测点并从其接收回波信号，以便感测在运动检测点处的对象上的谐波运动。超声波检测脉冲分布在 可以以不均匀的方式施加振动脉冲从接收到的超声波回波信号中，检测出谐波信号，并且使用卡尔曼滤波器或内插来计算检测到的谐波信号的振幅或相位的特性。

公开(公告)号：US07826982B2

公开(公告)日：2010-11-02

申请号：US11496959

申请日：2006-07-31

Applicant: Yi Zheng ,  Nicolas Nassar ,  Karlheinz R. Skowronek

Inventor： Yi Zheng ,  Nicolas Nassar ,  Karlheinz R. Skowronek

IPC: G01N31/00 ,  G06G7/58

CPC classification number: C12N9/16 ,  A61K31/506 ,  C07K2299/00 ,  Y02A90/26

Abstract: The preferred embodiments generally relate to methods and compositions that affect the GTP-binding activity of members of the Rho family GTPases, preferably Rac (Rac1, Rac2 and/or Rac3), such compositions include compounds that modulate the GTP/GDP exchange activity, along with uses for the compounds including screening for compounds which recognize Rac GTPase, and methods of treating pathological conditions associated or related to a Rho family GTPase, including Rac. The preferred embodiments also relate to methods of using such compounds, or derivatives thereof, e.g., in therapeutics, diagnostics, and as research tools.

Abstract translation: 优选的实施方案通常涉及影响Rho家族GTP酶，优选Rac（Rac1，Rac2和/或Rac3）成员的GTP-结合活性的方法和组合物，所述组合物包括调节GTP / GDP交换活性的化合物 用于化合物的用途，包括筛选识别Rac GTP酶的化合物，以及治疗与Rho家族GTP酶（包括Rac）相关或相关的病理状况的方法。 优选实施方案还涉及使用这些化合物或其衍生物的方法，例如在治疗学，诊断学和研究工具中。

公开(公告)号：US07818875B2

公开(公告)日：2010-10-26

申请号：US11297228

申请日：2005-12-07

Applicant: Hamid Balamame ,  Daniel Wayne Bedell ,  Mary Kathryn Gutberlet ,  Clarence Kai-Sheng Hsieh ,  Aron Pentek ,  Yi Zheng

Inventor： Hamid Balamame ,  Daniel Wayne Bedell ,  Mary Kathryn Gutberlet ,  Clarence Kai-Sheng Hsieh ,  Aron Pentek ,  Yi Zheng

IPC: G11B5/187

CPC classification number: G11B5/3163 ,  G11B5/3116 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method of manufacturing a magnetic write head that provides improved pole critical dimension control, such as improved track width control (improved sigma) and improved flare point control. The method involves a combination of several process improvements, such as photolithographically patterning a P2 pole tip defining photoresist frame using a zero print bias and also using a small flash field. The method also involves the use of a non-reactive ion etch to notch the first pole (P1) using the second pole (P2) as a mask.

Abstract translation: 一种制造磁写头的方法，其提供改进的极关键尺寸控制，例如改进的轨道宽度控制（改进的σ）和改进的闪点控制。 该方法涉及几个工艺改进的组合，例如使用零印刷偏压光刻地图案化限定光致抗蚀剂框架的P2极尖端并且还使用小的闪光场。 该方法还涉及使用非反应性离子蚀刻来使用第二极（P2）作为掩模来切割第一极（P1）。

公开(公告)号：US07749563B2

公开(公告)日：2010-07-06

申请号：US10266551

申请日：2002-10-07

Applicant: Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

Inventor： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

IPC: C23C16/00

CPC classification number: H01L21/02167 ,  C23C16/0272 ,  C23C16/325 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/314 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

Abstract translation: 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。 提供了一种用于沉积在低k碳化硅阻挡层上基本上没有从包含无氧有机硅化合物的处理气体连接到硅原子上的苯基沉积碳化硅盖层的方法。

公开(公告)号：US20100155367A1

公开(公告)日：2010-06-24

申请号：US12343720

申请日：2008-12-24

Applicant: Aron Pentek ,  Sue Siyang Zhang ,  Yi Zheng

Inventor： Aron Pentek ,  Sue Siyang Zhang ,  Yi Zheng

IPC: B44C1/22

CPC classification number: G11B5/3116 ,  G11B5/1278 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for manufacturing a magnetic write head having a write pole with a tapered trailing edge step. The resulting tapered trailing edge step maximizes write field at very small bit sizes by preventing the magnetic saturation of the write pole at the pole tip. The method includes depositing a magnetic write pole material and then depositing a magnetic material over the magnetic write pole material. A RIE mask and hard mask are deposited over the magnetic bump material. A resist mask is formed over the RIE mask and hard mask, and a reactive ion etching is performed to transfer the pattern of the resist mask onto the underlying hard mask. Then an ion milling is performed to form a the magnetic step layer with a tapered edge that defines a tapered trailing edge step structure of the write pole.

Abstract translation: 一种用于制造具有具有锥形后缘台阶的写极的磁写头的方法。 所产生的锥形后沿步骤通过防止磁极尖端的写极的磁饱和而使非常小的位尺寸的写入场最大化。 该方法包括沉积磁性写入磁极材料，然后在磁性写入磁极材料上沉积磁性材料。 RIE掩模和硬掩模沉积在磁性凸块材料上。 在RIE掩模和硬掩模上形成抗蚀剂掩模，并且执行反应离子蚀刻以将抗蚀剂掩模的图案转移到下面的硬掩模上。 然后执行离子铣削以形成具有锥形边缘的磁性阶梯层，其限定了写入极的锥形后缘阶梯结构。

公开(公告)号：US07659220B1

公开(公告)日：2010-02-09

申请号：US12327207

申请日：2008-12-03

Applicant: Yi Zheng ,  Richard C. Marlor ,  George C. Wei

Inventor： Yi Zheng ,  Richard C. Marlor ,  George C. Wei

IPC: C03C8/14 ,  C03C8/18

CPC classification number: C03C8/24 ,  C04B37/005 ,  C04B41/009 ,  C04B41/5022 ,  C04B41/86 ,  C04B2237/062 ,  C04B2237/066 ,  C04B2237/095 ,  C04B2237/10 ,  C04B2237/366 ,  H01J9/266 ,  C04B35/581 ,  C04B41/5096 ,  C04B41/5071

Abstract: There is described a sealing composition for sealing aluminum nitride and aluminum oxynitride ceramics comprising: a mixture of SiO2, at least one other metal oxide, and a silicon additive comprising at least one of silicon metal or a silicide. The silicon additive acts to suppress the formation of nitrogen bubbles during the sealing of articles comprised of aluminum nitride or aluminum oxynitride ceramics, e.g., as in the case of a ceramic discharge vessel for a high intensity discharge lamp.

Abstract translation: 描述了用于密封氮化铝和氮氧化铝陶瓷的密封组合物，其包括：SiO 2，至少一种其它金属氧化物和包含硅金属或硅化物中的至少一种的硅添加剂的混合物。 在氮化铝或氮氧化铝陶瓷的制品的密封过程中，例如与用于高强度放电灯的陶瓷放电容器的情况相同，硅添加剂起到抑制氮气泡形成的作用。

公开(公告)号：US07612080B2

公开(公告)日：2009-11-03

申请号：US11283556

申请日：2005-11-18

Applicant: Yi Zheng ,  Huzoor Akbar ,  David A. Williams ,  Wieslaw Adam Mazur

Inventor： Yi Zheng ,  Huzoor Akbar ,  David A. Williams ,  Wieslaw Adam Mazur

IPC: A61K31/506

CPC classification number: A61K31/506

Abstract: The preferred embodiments generally relate to methods and compositions that affect the GTP-binding activity of members of the Rho family GTPases, preferably Rac (Rac1, Rac2 and/or Rac3), such compositions include compounds that modulate the GTP/GDP exchange activity, along with uses for the compounds including screening for compounds which recognize Rac GTPase, and methods of treating pathological conditions associated or related to a Rho family GTPase, including Rac. The preferred embodiments also relate to methods of using such compounds, or derivatives thereof, e.g., in therapeutics, diagnostics, and as research tools.

Abstract translation: 优选的实施方案通常涉及影响Rho家族GTP酶，优选Rac（Rac1，Rac2和/或Rac3）成员的GTP结合活性的方法和组合物，所述组合物包括沿着GTP / GDP交换活性调节GTP / GDP交换活性的化合物 用于化合物的用途，包括筛选识别Rac GTP酶的化合物，以及治疗与Rho家族GTP酶（包括Rac）相关或相关的病理状况的方法。 优选实施方案还涉及使用这些化合物或其衍生物的方法，例如在治疗学，诊断学和研究工具中。