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21.发明授权公开(公告)号：US11067906B2
公开(公告)日：2021-07-20
申请号：US16805836
申请日：2020-03-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Yu Tu , Po-Chung Cheng , Hsiao-Lun Chang , Li-Jui Chen , Han-Lung Chang
Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.
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22.发明授权公开(公告)号：US10955762B2
公开(公告)日：2021-03-23
申请号：US16927142
申请日：2020-07-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi Yang , Ssu-Yu Chen , Shang-Chieh Chien , Chieh Hsieh , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
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公开(公告)号：US20210037634A1
公开(公告)日：2021-02-04
申请号：US16805854
申请日：2020-03-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jen-Hung Hsiao , Po-Chung Cheng , Li-Jui Chen , Shang-Chieh Chien
Abstract: A droplet generator includes a steering system, a reservoir, a nozzle, a first heater, a second heater and a third heater. The steering system is used for controlling a position of droplet release of the droplet generator. The reservoir is held on the steering system for storing tin. The nozzle is connected with the reservoir for generating tin droplets, wherein the nozzle comprises at least a first zone, a second zone and a third zone connected in sequence. The first heater surrounds a peripheral surface of the nozzle in the first zone. The second heater surrounds a peripheral surface of the nozzle in the second zone. The third heater surrounds a peripheral surface of the nozzle in the third zone, wherein the heating of the first heater, the second heater and the third heater are separately controlled.
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公开(公告)号：US10720419B2
公开(公告)日：2020-07-21
申请号：US16522825
申请日：2019-07-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hung-Wen Cho , Fu-Jye Liang , Chun-Kuang Chen , Chih-Tsung Shih , Li-Jui Chen , Po-Chung Cheng , Chin-Hsiang Lin
Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer is calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. The second portion is adjacent to the first portion, and a width of the second portion equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout.
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公开(公告)号：US10718718B2
公开(公告)日：2020-07-21
申请号：US16587010
申请日：2019-09-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Shang-Chieh Chien , Shang-Ying Wu , Li-Kai Cheng , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng , Anthony Yen , Chia-Chen Chen
IPC: G01N21/94 , G03F7/00 , G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/954
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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Patent Agency Ranking
公开(公告)号：US10712676B2
公开(公告)日：2020-07-14
申请号：US16675921
申请日：2019-11-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi Yang , Ssu-Yu Chen , Shang-Chieh Chien , Chieh Hsieh , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.
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公开(公告)号：US10687410B2
公开(公告)日：2020-06-16
申请号：US16250026
申请日：2019-01-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi Yang , Sheng-Ta Lin , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
IPC: H05G2/00 , B08B5/02 , B01D46/10 , G03F7/20 , H01L21/027
Abstract: An extreme ultraviolet radiation source is provided, including a vessel, an optical collector, and a gas scrubber. The vessel has a gas inlet and a gas outlet. The optical collector is disposed within the vessel and configured to collect and reflect extreme ultraviolet light produced in the vessel. A cleaning gas is introduced into the vessel through the gas inlet to clean the surface of the optical collector. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the size of the gas passage close to the gas outlet is smaller than the size of the gas passage away from the gas outlet.
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公开(公告)号：US10477663B2
公开(公告)日：2019-11-12
申请号：US15868373
申请日：2018-01-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chieh Hsieh , Shang-Chieh Chien , Chun-Chia Hsu , Bo-Tsun Liu , Tzung-Chi Fu , Li-Jui Chen , Po-Chung Cheng
Abstract: A method for generating light is provided. The method includes generating targets with a fuel target generator. The method further includes measuring a period of time during which one of the targets passes through two detection positions on a path along which the targets move. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the fuel target generator or the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value.
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公开(公告)号：US10314154B1
公开(公告)日：2019-06-04
申请号：US15905951
申请日：2018-02-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Chia Hsu , Chieh Hsieh , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng , Tzung-Chi Fu , Bo-Tsun Liu
IPC: H05G2/00
Abstract: An EUV radiation source module includes a target droplet generator configured to generate target droplets; a first laser source configured to generate first laser pulses that heat the target droplets to produce target plumes; a second laser source configured to generate second laser pulses that heat the target plumes to produce plasma emitting EUV radiation; third and fourth laser sources configured to generate first and second laser beams, respectively, that are directed onto a travel path of the target plumes, wherein the first and second laser beams are substantially parallel; and a monitor configured to receive the first and second laser beams reflected by the target plumes.
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公开(公告)号：US10162277B2
公开(公告)日：2018-12-25
申请号：US15800215
申请日：2017-11-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shang-Chieh Chien , Jye-Fu Jeng , Shih-Chang Shih , Kun-Jin Wu , Guan-Heng Liu , Jen-Yang Chung , Li-Jui Chen , Po-Chung Cheng
Abstract: An extreme ultraviolet (EUV) lithography system includes a collector designed to collect and reflect EUV radiation, a cover integrated with the collector, a first exhaust line connected to the cover and configured to receive debris vapor from the collector, a debris trapper connected to the first exhaust line and configured to trap the debris vapor, and a second exhaust line connected to the debris trapper.
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