公开(公告)号：US10162277B2

公开(公告)日：2018-12-25

申请号：US15800215

申请日：2017-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh Chien ,  Jye-Fu Jeng ,  Shih-Chang Shih ,  Kun-Jin Wu ,  Guan-Heng Liu ,  Jen-Yang Chung ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) lithography system includes a collector designed to collect and reflect EUV radiation, a cover integrated with the collector, a first exhaust line connected to the cover and configured to receive debris vapor from the collector, a debris trapper connected to the first exhaust line and configured to trap the debris vapor, and a second exhaust line connected to the debris trapper.