公开(公告)号：US11528798B2

公开(公告)日：2022-12-13

申请号：US17338441

申请日：2021-06-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00

Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.

公开(公告)号：US11470710B2

公开(公告)日：2022-10-11

申请号：US17135768

申请日：2020-12-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Shin Cheng ,  Han-Lung Chang ,  Li-Jui Chen ,  Po-Chung Cheng ,  Hsiao-Lun Chang

IPC: H05G2/00 ,  G05D7/06

Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.

公开(公告)号：US20210033986A1

公开(公告)日：2021-02-04

申请号：US16805836

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Tu ,  Po-Chung Cheng ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Han-Lung Chang

IPC: G03F7/20 ,  H05G2/00

Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

公开(公告)号：US11067906B2

公开(公告)日：2021-07-20

申请号：US16805836

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Tu ,  Po-Chung Cheng ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Han-Lung Chang

IPC: H05G2/00 ,  G03F7/20

Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

公开(公告)号：US11997778B2

公开(公告)日：2024-05-28

申请号：US18064156

申请日：2022-12-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00

CPC classification number: H05G2/006 ,  H05G2/005 ,  H05G2/008

Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.

公开(公告)号：US11134558B2

公开(公告)日：2021-09-28

申请号：US16508596

申请日：2019-07-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Yu-Kuang Sun ,  Shao-Hua Wang ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng ,  Cheng-Hao Lai ,  Hsin-Feng Chen ,  Wei-Shin Cheng ,  Ming-Hsun Tsai ,  Yen-Hsun Chen

IPC: H05G2/00

Abstract: A droplet generator assembly includes a storage tank, a refill system, a droplet generator, and a temperature control system. The storage tank is configured to store a target material. The refill system is connected to the storage tank. The droplet generator includes a reservoir and a nozzle connected to the reservoir, in which the droplet generator is connected to the refill system, and the refill system is configured to deliver the target material to the reservoir. The temperature control system is adjacent to the refill system or the reservoir.

公开(公告)号：US11032897B2

公开(公告)日：2021-06-08

申请号：US16548731

申请日：2019-08-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00

Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.

公开(公告)号：US10802394B2

公开(公告)日：2020-10-13

申请号：US15884801

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Lun Chang ,  Chueh-Chi Kuo ,  Tsung-Yen Lee ,  Tzung-Chi Fu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Che-Chang Hsu

IPC: G03F1/40 ,  G03F1/66 ,  G03F1/24 ,  G03F1/38

Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.