公开(公告)号：US20170222007A1

公开(公告)日：2017-08-03

申请号：US15014752

申请日：2016-02-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jean-Pierre COLINGE

IPC: H01L29/423 ,  H01L29/08 ,  H01L29/66 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/36 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78687 ,  H01L29/78696

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a nanowire structure formed over the substrate. In addition, the nanowire structure includes a first portion, a second portion, and a third portion. The semiconductor structure further includes a gate structure formed around the third portion of the nanowire structure and a source region formed in the first portion of the nanowire structure. In addition, a depletion region in the nanowire structure has a length longer than a length of the gate structure and is not in contact with the source region.

公开(公告)号：US20170170236A1

公开(公告)日：2017-06-15

申请号：US14970001

申请日：2015-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jean-Pierre COLINGE ,  Carlos H. DIAZ

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC classification number: H01L27/2454 ,  G11C7/04 ,  G11C13/0061 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0078 ,  G11C2013/0092 ,  G11C2213/53 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/148 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1683

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a substrate and a memory cell structure formed over the substrate. In addition, the memory cell structure includes a first electrode layer formed over the substrate and a resistance-change material layer formed over the first electrode layer. The memory cell structure further includes a second electrode layer formed over the resistance-change material layer. In addition, the resistance-change material layer includes a semimetal or a semimetal alloy.

公开(公告)号：US20170084461A1

公开(公告)日：2017-03-23

申请号：US14856875

申请日：2015-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Jean-Pierre COLINGE ,  Carlos H. DIAZ

IPC: H01L21/225 ,  H01L29/423 ,  H01L29/66 ,  H01L21/308 ,  H01L29/78

CPC classification number: H01L21/3085 ,  H01L21/31 ,  H01L21/311 ,  H01L29/4236 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The semiconductor device structure further includes a spacer element over a sidewall of the gate stack. The spacer element includes a first layer and a second layer over the first layer. The dielectric constant of the first layer is greater than the dielectric constant of the second layer.