公开(公告)号：US20220085172A1

公开(公告)日：2022-03-17

申请号：US17420416

申请日：2019-09-26

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa HONKE ,  Kyoko OKITA

IPC: H01L29/16 ,  H01L21/02

Abstract: A recycle wafer of silicon carbide has a silicon carbide substrate and a first silicon carbide layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide layer is in contact with the first main surface. The silicon carbide substrate includes a substrate region that is within 10 μm from the first main surface toward the second main surface. In a direction perpendicular to the first main surface, a value obtained by subtracting a value that is three times a standard deviation of a nitrogen concentration in the substrate region from an average value of the nitrogen concentration in the substrate region is greater than a minimum value of a nitrogen concentration in the first silicon carbide layer.

公开(公告)号：US20180355513A1

公开(公告)日：2018-12-13

申请号：US16106101

申请日：2018-08-21

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA

IPC: C30B33/10 ,  H01L21/02 ,  H01L29/16 ,  H01L21/67 ,  B24B37/04 ,  C30B29/36 ,  H01L21/306 ,  H01L21/04

Abstract: A method for manufacturing a silicon carbide substrate includes steps of preparing a silicon carbide substrate having a main surface, polishing the main surface of the silicon carbide substrate using a polishing agent containing a metal catalyst, and cleaning the silicon carbide substrate after the step of polishing. The step of cleaning includes a step of cleaning the silicon carbide substrate with aqua regia.

公开(公告)号：US20180254323A1

公开(公告)日：2018-09-06

申请号：US15754661

申请日：2016-07-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Shunsaku UETA ,  Kyoko OKITA ,  Shin HARADA

IPC: H01L29/16 ,  H01L21/02 ,  C30B29/36

CPC classification number: H01L29/1608 ,  C30B23/025 ,  C30B29/36 ,  H01L21/02378

Abstract: A silicon carbide substrate includes a carbon-surface-side principal surface and a silicon-surface-side principal surface. The silicon carbide substrate has a diameter of 100 mm or greater and a thickness of 300 μm or greater. An off angle of the carbon-surface-side principal surface and the silicon-surface-side principal surface relative to a {0001} plane is smaller than or equal to 4°. A nitrogen concentration in the carbon-surface-side principal surface is higher than a nitrogen concentration in the silicon-surface-side principal surface, and a difference in Raman peak shift between the carbon-surface-side principal surface and the silicon-surface-side principal surface is smaller than or equal to 0.2 cm−1.

公开(公告)号：US20180033703A1

公开(公告)日：2018-02-01

申请号：US15552863

申请日：2016-01-21

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Tsubasa HONKE ,  Kyoko OKITA

IPC: H01L21/66 ,  C23C14/34 ,  C23C14/58 ,  C30B29/36 ,  B24C1/08 ,  C30B33/02 ,  H01L21/027 ,  H01L21/306 ,  H01L29/66 ,  C23C14/06 ,  C30B25/20

CPC classification number: H01L22/20 ,  B24C1/08 ,  C23C14/0682 ,  C23C14/185 ,  C23C14/34 ,  C23C14/5806 ,  C23C16/325 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  C30B31/20 ,  C30B33/02 ,  H01L21/02013 ,  H01L21/02024 ,  H01L21/027 ,  H01L21/265 ,  H01L21/304 ,  H01L21/30625 ,  H01L22/12 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66053 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8083 ,  H01L29/872

Abstract: A silicon carbide single crystal substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface includes a central square region and an outer square region. When viewed in a thickness direction, each of the central square region and the outer square region has a side having a length of 15 mm. The first main surface has a maximum diameter of not less than 100 mm. The silicon carbide single crystal substrate has a TTV of not more than 5 μm. A value obtained by dividing a LTIR in the central square region by a LTV in the central square region is not less than 0.8 and not more than 1.2. A value obtained by dividing a LTV in the outer square region by the LTV in the central square region is not less than 1 and not more than 3.

公开(公告)号：US20170335489A1

公开(公告)日：2017-11-23

申请号：US15527121

申请日：2015-11-04

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa HONKE ,  Kyoko OKITA

IPC: C30B33/12 ,  H01L29/04 ,  H01L21/306 ,  H01L21/02 ,  C30B29/36 ,  C01B32/956 ,  C09K3/14 ,  C09G1/02 ,  B24B37/04 ,  B08B3/08 ,  H01L29/16 ,  C30B33/10

CPC classification number: C30B33/12 ,  B08B3/08 ,  B24B37/00 ,  B24B37/044 ,  C01B32/956 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C30B29/36 ,  C30B33/10 ,  H01L21/02024 ,  H01L21/02052 ,  H01L21/30625 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/34 ,  H01L29/78 ,  H01L29/861

Abstract: A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear etch-pit groups observed in the main surface is equal to or less than the diameter of the substrate.

公开(公告)号：US20170073837A1

公开(公告)日：2017-03-16

申请号：US15125238

申请日：2015-02-09

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa HONKE ,  Kyoko OKITA

IPC: C30B25/18 ,  B24B37/04 ,  C30B29/36 ,  C23C16/32 ,  H01L21/02 ,  C30B25/20

CPC classification number: C30B25/186 ,  B24B37/042 ,  C23C16/325 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658

Abstract: A silicon carbide single-crystal substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface has a maximum diameter of not less than 100 mm. The first main surface includes a first central region excluding a region within 3 mm from an outer circumference of the first main surface. When the first central region is divided into first square regions each having a side of 250 μm, each of the first square regions has an arithmetic average roughness (Sa) of less than 0.2 nm, and an oxygen concentration in each of the first square regions is not less than 5 atom % and less than 20 atom %.

Abstract translation: 碳化硅单晶衬底包括第一主表面和与第一主表面相对的第二主表面。 第一主表面的最大直径不小于100mm。 第一主表面包括除了距离第一主表面的外圆周3mm以内的区域的第一中心区域。 当第一中心区域被分成具有250μm侧面的第一方形区域时，第一方形区域中的每一个具有小于0.2nm的算术平均粗糙度（Sa），并且每个第一方形区域中的氧浓度 不小于5原子％且小于20原子％。

公开(公告)号：US20140073228A1

公开(公告)日：2014-03-13

申请号：US14083003

申请日：2013-11-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko OKITA ,  Keiji ISHIBASHI

IPC: B24B9/06

CPC classification number: H01L29/34 ,  B24B9/065 ,  B24D3/06 ,  H01L23/562 ,  H01L29/04 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon carbide single-crystal substrate includes a first surface, a second surface opposite to the first surface, and a peripheral edge portion sandwiched between the first surface and the second surface, A plurality of grinding traces are formed in a surface of the peripheral edge portion. A chamfer width as a distance from an outermost peripheral end portion of the peripheral edge portion to one of the plurality of grinding traces which is located on an innermost peripheral side of the peripheral edge portion in a direction parallel to the first surface is not less than 50 μm and not more than 400 μm. Thereby, a silicon carbide single-crystal substrate capable of suppressing occurrence of a crack, and a method for manufacturing the same can be provided.

Abstract translation: 碳化硅单晶衬底包括第一表面，与第一表面相对的第二表面和夹在第一表面和第二表面之间的周边边缘部分。多个磨削痕迹形成在周边边缘的表面中 一部分。 与周缘部的最外周端部相对于位于周缘部的与第一面平行的方向的最内周侧的多个研磨轨迹之一的距离的倒角宽度不小于 50岁，不超过400个妈妈。 由此，可以提供能够抑制裂纹发生的碳化硅单晶基板及其制造方法。