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    INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT
    2.
    发明申请
    INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT 审中-公开
    INGOT，碳化硅基材和生产INGOT的方法

    公开(公告)号：US20140287226A1

    公开(公告)日：2014-09-25

    申请号：US14173068

    申请日：2014-02-05

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Tsutomu HORI ,  Makoto SASAKI ,  Shunsaku UETA ,  Tomohiro KAWASE

    IPC: C30B23/00 ,  C30B29/36

    CPC classification number: C30B23/002 ,  C30B29/36 ,  Y10T428/26

    Abstract: There is obtained an ingot in which generation of crack is suppressed. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. When measuring a lattice constant in the silicon carbide layer at a plurality of measurement points in the growth direction, a difference between a maximum value of the lattice constant and a minimum value of the lattice constant is 0.004 nm or less. A distance between adjacent two points of the measurement points is 5 mm.

    Abstract translation: 得到了抑制裂纹的产生的锭。 该锭包括：由碳化硅形成的种子基底; 以及在种子基底上生长的碳化硅层。 碳化硅层的生长方向的厚度为15mm以上。 当在生长方向的多个测量点处测量碳化硅层中的晶格常数时，晶格常数的最大值与晶格常数的最小值之间的差为0.004nm以下。 测量点的相邻两点之间的距离为5mm。

    SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
    3.
    发明申请
    SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE 有权

    公开(公告)号：US20250056856A1

    公开(公告)日：2025-02-13

    申请号：US18719575

    申请日：2022-09-15

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Naoki KAJI ,  Shunsaku UETA

    IPC: H01L29/16 ,  H01L21/02 ,  H01L29/66

    Abstract: A silicon carbide substrate has a main surface. The main surface is constituted of an outer peripheral region and a central region. The outer peripheral region is a region within 5 mm from an outer edge of the main surface. The central region is surrounded by the outer peripheral region. A standard deviation of lifetimes of minority carriers in the central region is 0.7 ns or less. A standard deviation of lifetimes of minority carriers in the central region before a process of heating to a temperature 1600-° C. to 1900° C. is performed is defined as a first standard deviation. A standard deviation of lifetimes of minority carriers in the central region after the process is performed is defined as a second standard deviation. A value obtained by subtracting the first standard deviation from the second standard deviation is 10% or less of the first standard deviation.

    CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL
    5.
    发明申请
    CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL 审中-公开
    用于生产单晶的可制造和方法

    公开(公告)号：US20160002820A1

    公开(公告)日：2016-01-07

    申请号：US14789079

    申请日：2015-07-01

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Tsutomu HORI ,  Shunsaku UETA ,  Akira MATSUSHIMA

    IPC: C30B23/06 ,  F27B14/10 ,  C30B29/36

    CPC classification number: C30B23/066 ,  C30B23/00 ,  C30B29/36 ,  C30B35/002 ,  F27B14/10 ,  F27B2014/102 ,  F27B2014/104

    Abstract: A crucible has a bottom and a cylindrical side surface. In the crucible, a source material is sublimated to grow a single crystal. The crucible includes a third region configured to receive a source material, a second region extending from the third region in a direction away from the bottom, and a first region extending from the second region in a direction away from the bottom. The crucible includes a first wall and a second wall inside the side surface. The first wall surrounds the first region, the second wall surrounds the second region. The crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface. The distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom.

    Abstract translation: 坩埚具有底部和圆柱形侧面。 在坩埚中，将源材料升华以生长单晶。 坩埚包括构造成容纳源材料的第三区域，从远离底部的方向从第三区域延伸的第二区域，以及从远离底部的方向从第二区域延伸的第一区域。 该坩埚包括侧表面内的第一壁和第二壁。 第一壁围绕第一区域，第二壁围绕第二区域。 所述坩埚包括在所述第一壁和所述侧表面之间的第一室以及所述第二壁和所述侧表面之间的第二室。 第一壁上的水平相对部分之间的距离是恒定的或随着水平相对部分靠近底部而增加。

    SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE
    6.
    发明公开
    SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE 审中-公开

    公开(公告)号：US20240309555A1

    公开(公告)日：2024-09-19

    申请号：US18575557

    申请日：2022-06-15

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Shunsaku UETA

    IPC: C30B29/36

    CPC classification number: C30B29/36

    Abstract: A middle cross-section includes a dense region in which an area density of threading screw dislocations is 2 or more times an overall average area density. An area of the dense region is 10% or less of an area of the middle cross-section. A line density of a stacking fault in each of a first and a second cross-sections is 1/cm or less, the first cross-section being separated from a first boundary toward a second boundary by a distance of 0.1 times a distance between the first and second boundaries, the second cross-section being a cross-section separated from the second boundary toward the first boundary by a distance of 0.1 times the distance between the first and second boundaries. The middle cross-section includes a sparse density region in which an area density of threading screw dislocations is lower than half the overall average area density. An area of the sparse density region is 12% or more of the area of the middle cross-section.

    METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
    8.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
    制造单晶碳化硅的方法

    公开(公告)号：US20160340796A1

    公开(公告)日：2016-11-24

    申请号：US15111013

    申请日：2014-11-21

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Tsutomu HORI ,  Shunsaku UETA ,  Akira MATSUSHIMA

    IPC: C30B23/02 ,  C30B33/02 ,  C30B29/36

    CPC classification number: C30B23/025 ,  C30B23/06 ,  C30B29/36 ,  C30B33/00 ,  C30B33/02

    Abstract: Provided is a method for manufacturing a silicon carbide single crystal capable of easily separating a silicon carbide single crystal from a pedestal. The method includes the step of fixing a seed substrate to a pedestal with a stress buffer layer being interposed therebetween, the step of growing a silicon carbide single crystal on the seed substrate, the step of separating the silicon carbide single crystal from the pedestal at the stress buffer layer, and the step of removing a residue of the stress buffer layer adhering to the silicon carbide single crystal subjected to the step of separating.

    Abstract translation: 提供一种能够容易地从基座上分离碳化硅单晶的碳化硅单晶的制造方法。 该方法包括以下步骤：将晶种基板固定到基座上，其间插入有应力缓冲层，在种子基板上生长碳化硅单晶的步骤，在该基板上分离碳化硅单晶的步骤 应力缓冲层，以及除去附着在分离步骤的碳化硅单晶上的应力缓冲层残留物的工序。

    SILICON CARBIDE SUBSTRATE
    9.
    发明公开
    SILICON CARBIDE SUBSTRATE 审中-公开

    公开(公告)号：US20240254656A1

    公开(公告)日：2024-08-01

    申请号：US18291816

    申请日：2022-06-28

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Hiroki TAKAOKA ,  Shunsaku UETA

    IPC: C30B29/36 ,  C01B32/956 ,  C30B23/06

    CPC classification number: C30B29/36 ,  C01B32/956 ,  C30B23/063

    Abstract: A silicon carbide substrate includes a dopant. The silicon carbide substrate has, on an off-downstream side with respect to a center of the silicon carbide substrate in plan view, a portion having a resistivity lower than a resistivity at the center of the silicon carbide substrate in plan view. A value obtained by dividing a difference between the resistivity of the silicon carbide substrate at the center of the silicon carbide substrate in plan view and a minimum resistivity of the silicon carbide substrate on the off-downstream side with respect to the center of the silicon carbide substrate in plan view by the resistivity of the silicon carbide substrate at the center of the silicon carbide substrate in plan view is 0.015 or less. The resistivity of the silicon carbide substrate increases from a position at which the silicon carbide substrate has the minimum resistivity toward the off-downstream side.

    SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
    10.
    发明申请
    SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE 有权

    公开(公告)号：US20230081506A1

    公开(公告)日：2023-03-16

    申请号：US17993200

    申请日：2022-11-23

    Applicant: Sumitomo Electric Industries, Ltd.

    Inventor： Kyoko OKITA ,  Takashi SAKURADA ,  Eiryo TAKASUKA ,  Shunsaku UETA ,  Sho SASAKI ,  Naoki KAJI ,  Hidehiko MISHIMA ,  Hirokazu EGUCHI

    IPC: C30B29/36 ,  G01N23/207

    Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

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