公开(公告)号：US20250006796A1

公开(公告)日：2025-01-02

申请号：US18703652

申请日：2022-09-15

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takahiro SHIIHARA ,  Naoki KAJI ,  Shunsaku UETA ,  Hiroki TAKAOKA

IPC: H01L29/16 ,  C30B29/36 ,  H01L21/02

Abstract: A silicon carbide substrate includes a first main surface and a second main surface opposite to the first main surface. A void is present in the silicon carbide substrate. An area density of the void in the first main surface is 0.7/cm2 or less. A width of the void is 10 μm to 80 μm when viewed in a direction perpendicular to the first main surface. In a cross-section perpendicular to the first main surface, the width of the void decreases from the first surface toward the second surface when viewed in a direction parallel to the first main surface. A depth of the void is larger than or equal to the width of the void in the first main surface and smaller than a thickness of the silicon carbide substrate when viewed in the direction parallel to the first main surface.

公开(公告)号：US20240254656A1

公开(公告)日：2024-08-01

申请号：US18291816

申请日：2022-06-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hiroki TAKAOKA ,  Shunsaku UETA

IPC: C30B29/36 ,  C01B32/956 ,  C30B23/06

CPC classification number: C30B29/36 ,  C01B32/956 ,  C30B23/063

Abstract: A silicon carbide substrate includes a dopant. The silicon carbide substrate has, on an off-downstream side with respect to a center of the silicon carbide substrate in plan view, a portion having a resistivity lower than a resistivity at the center of the silicon carbide substrate in plan view. A value obtained by dividing a difference between the resistivity of the silicon carbide substrate at the center of the silicon carbide substrate in plan view and a minimum resistivity of the silicon carbide substrate on the off-downstream side with respect to the center of the silicon carbide substrate in plan view by the resistivity of the silicon carbide substrate at the center of the silicon carbide substrate in plan view is 0.015 or less. The resistivity of the silicon carbide substrate increases from a position at which the silicon carbide substrate has the minimum resistivity toward the off-downstream side.