公开(公告)号：US20250006796A1

公开(公告)日：2025-01-02

申请号：US18703652

申请日：2022-09-15

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takahiro SHIIHARA ,  Naoki KAJI ,  Shunsaku UETA ,  Hiroki TAKAOKA

IPC: H01L29/16 ,  C30B29/36 ,  H01L21/02

Abstract: A silicon carbide substrate includes a first main surface and a second main surface opposite to the first main surface. A void is present in the silicon carbide substrate. An area density of the void in the first main surface is 0.7/cm2 or less. A width of the void is 10 μm to 80 μm when viewed in a direction perpendicular to the first main surface. In a cross-section perpendicular to the first main surface, the width of the void decreases from the first surface toward the second surface when viewed in a direction parallel to the first main surface. A depth of the void is larger than or equal to the width of the void in the first main surface and smaller than a thickness of the silicon carbide substrate when viewed in the direction parallel to the first main surface.