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235 条记录 (耗时 0.044 秒)

    Method of fabricating a surface-type optical apparatus
    22.
    发明申请
    Method of fabricating a surface-type optical apparatus 失效

    公开(公告)号：US20050074973A1

    公开(公告)日：2005-04-07

    申请号：US10995363

    申请日：2004-11-24

    申请人： Toshihiko Ouchi ,  Yasuhiro Shimada

    发明人： Toshihiko Ouchi ,  Yasuhiro Shimada

    IPC分类号： B81B3/00 ,  G01Q30/20 ,  G01Q60/00 ,  H01J3/14 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： G01Q60/22

    摘要： A surface optical apparatus that includes a surface optical device with p-side and n-side electrodes, such as a surface emitting laser, a first substrate for supporting the surface optical device directly or through an elastic supporter formed of one or plural layers, and a first electrode wiring of at least a wire formed on the first substrate and electrically connected to one of the electrodes. A current is injected into or a voltage is applied across the surface optical device through the first electrode wiring and the p-side and n-side electrodes. A photodetector for detecting light from the surface optical device may also be arranged in the vicinity of the optical device.

    Semiconductor memory device and drive method therefor
    24.
    发明授权
    Semiconductor memory device and drive method therefor 失效
    半导体存储器件及其驱动方法

    公开(公告)号：US06707704B2

    公开(公告)日：2004-03-16

    申请号：US10392843

    申请日：2003-03-21

    申请人： Yoshihisa Kato ,  Yasuhiro Shimada ,  Takayoshi Yamada

    发明人： Yoshihisa Kato ,  Yasuhiro Shimada ,  Takayoshi Yamada

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： The semiconductor memory device of the invention includes at least three memory cell blocks arranged in a word line direction. Each of the memory cell blocks includes a plurality of memory cells arranged in a bit line direction. Each of the memory cells includes a ferroelectric capacitor for storing data by displacement of polarization of a ferroelectric film and a selection transistor connected to one of paired electrodes of the ferroelectric capacitor. Each of the memory cell blocks also includes: a bit line, a sub-bit line and a source line extending in the bit line direction; and a read transistor having a gate connected to one end of the sub-bit line, a source connected to the source line, and a drain connected to one end of the bit line. The read transistor reads data by detecting the displacement of the polarization of the ferroelectric film of the ferroelectric capacitor of a data read memory cell from which data is read among the plurality of memory cells. The sub-bit lines of any two of the memory cell blocks are connected to each other via a sub-bit line coupling switch.

    摘要翻译： 本发明的半导体存储器件包括沿字线方向布置的至少三个存储单元块。 每个存储单元块包括以位线方向排列的多个存储单元。 每个存储单元包括用于通过铁电薄膜的极化位移存储数据的铁电电容器和连接到铁电体电容器的一对电极之一的选择晶体管。 每个存储单元块还包括：位线，子位线和沿位线方向延伸的源极线; 以及读取晶体管，其具有连接到子位线的一端的栅极，连接到源极线的源极和连接到位线的一端的漏极。 读取晶体管通过检测在多个存储单元中从其读取数据的数据读取存储单元的铁电电容器的铁电体的极化的位移来读取数据。 任何两个存储单元块的子位线通过子位线耦合开关相互连接。

    Silver halide photosensitive material
    25.
    发明授权
    Silver halide photosensitive material 失效
    卤化银感光材料

    公开(公告)号：US06686140B2

    公开(公告)日：2004-02-03

    申请号：US10383771

    申请日：2003-03-10

    申请人： Naoki Asanuma ,  Kohzaburoh Yamada ,  Yasuhiro Shimada

    发明人： Naoki Asanuma ,  Kohzaburoh Yamada ,  Yasuhiro Shimada

    IPC分类号： G03C108

    CPC分类号： G03C1/10 ,  G03C1/346 ,  Y10S430/156

    摘要： A silver halide photosensitive material comprises at least one light sensitive silver halide emulsion layer on a support. The silver halide photosensitive material contains at least one compound capable of undergoing a one-electron oxidation to thereby form a one-electron oxidation product thereof, the one-electron oxidation product being capable of releasing further one or more electrons, and at least one reducing compound having a C/H value of 3 or less; and another reducing compound having a C/H value of more than 3, the C/H value representing a ratio of (the number of Group IV elements)/(the sum of Groups III, V, VI and VII elements).

    摘要翻译： 卤化银感光材料在载体上包含至少一种感光卤化银乳剂层。 卤化银感光材料含有至少一种能够进行单电子氧化从而形成单电子氧化产物的化合物，该单电子氧化产物能够进一步释放一个或多个电子，并且至少一个还原 C / H值为3以下的化合物; 和C / H值大于3的另一种还原化合物，C / H值表示（IV族元素的数量）/（III，V，VI和VII族元素的总和）的比率。

    1H-pyrrolo-[1,2-b][1,2,4,]triazole compound and its synthetic intermediate, and method of preparing a 1H-1,2,4-triazole-5-yl-acetic acid ester compound
    27.
    发明授权
    1H-pyrrolo-[1,2-b][1,2,4,]triazole compound and its synthetic intermediate, and method of preparing a 1H-1,2,4-triazole-5-yl-acetic acid ester compound 失效
    1H-吡咯并[1,2-b] [1,2,4]三唑化合物及其合成中间体，以及制备1H-1,2,4-三唑-5-基 - 乙酸酯化合物

    公开(公告)号：US06384219B1

    公开(公告)日：2002-05-07

    申请号：US09003881

    申请日：1998-01-07

    申请人： Yasuhiro Shimada ,  Hideki Maeta ,  Yoshio Shimura

    发明人： Yasuhiro Shimada ,  Hideki Maeta ,  Yoshio Shimura

    IPC分类号： C07D48704

    CPC分类号： C07D249/08 ,  C07D487/04 ,  G03C7/383

    摘要： There is disclosed a 1H-pyrrolo-[1,2-b][1,2,4]triazole compound represented by formula (I): wherein R is an alkyl group; R1, R2, R3, R1′, R2′, and R3′ each are a hydrogen atom or an alkyl group; R1 and R2, and R1′ and R2′ may bond together to form a ring, respectively; R4 is a hydrogen atom or an alkyl group, and X is heterocyclic group, a substituted amino group, or an aryl group. The compound is useful as a photographic cyan coupler. There is also disclosed synthetic intermediates of the compound and a production method of the intermediates.

    摘要翻译： 公开了由式（I）表示的1H-吡咯并[1,2-b] [1,2,4]三唑化合物：其中R是烷基; R1，R2，R3，R1'，R2'和R3'各自为氢原子或烷基; R 1和R 2，并且R 1'和R 2'可以分别键合在一起形成环; R4是氢原子或烷基，X是杂环基，取代氨基或芳基。 该化合物可用作照相青色成色剂。 还公开了该化合物的合成中间体和中间体的制备方法。