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    Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same
    21.
    发明授权
    Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same 有权
    化学气相沉积装置及使用其形成半导体外延薄膜的方法

    公开(公告)号：US09171994B2

    公开(公告)日：2015-10-27

    申请号：US14518948

    申请日：2014-10-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

    IPC: H01L21/00 ,  H01L33/00 ,  C23C16/455 ,  C23C16/458

    CPC classification number: H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

    Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

    Abstract translation: 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

    AIR CONDITIONER
    22.
    发明申请
    AIR CONDITIONER 有权
    冷气机

    公开(公告)号：US20140117825A1

    公开(公告)日：2014-05-01

    申请号：US14047471

    申请日：2013-10-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Wook Jin Lee ,  Sung Tae Kim

    IPC: F24F13/20 ,  A47B81/00

    CPC classification number: F24F13/20 ,  F24F1/20 ,  F24F1/22 ,  G06F15/161 ,  H05K5/00 ,  H05K7/1418 ,  H05K7/1454 ,  H05K7/1467 ,  H05K7/1488 ,  H05K13/0015

    Abstract: An air conditioner includes a control box assembly capable of efficiently utilizing a space inside a control box and easily performing inspection and repair of a circuit unit disposed in the control box. The air conditioner includes a case that constitutes an exterior and a control box assembly mounted in the case, wherein the control box assembly includes a control box in which an accommodation portion is formed, a sliding panel having one side on which a circuit unit is mounted and being accommodated in the accommodation portion so as to be taken out of the control box, and a rotation panel having one side on which the circuit unit is mounted and being rotatably mounted at one side of the control box.

    Abstract translation: 空调器包括能够有效地利用控制箱内的空间并且容易地进行设置在控制箱中的电路单元的检查和修理的控制箱组件。 空调器包括构成外壳的壳体和安装在壳体中的控制箱组件，其中控制箱组件包括其中形成有容纳部分的控制箱，具有安装有电路单元的一侧的滑动面板 并且容纳在所述容纳部分中以便从所述控制箱中取出;以及旋转板，其一侧安装有所述电路单元并且可旋转地安装在所述控制箱的一侧。

    Light emitting device
    28.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08912726B2

    公开(公告)日：2014-12-16

    申请号：US13789601

    申请日：2013-03-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong Ho Lee ,  Sung Tae Kim ,  Chan Mook Lim ,  Jin Hwan Kim

    IPC: H05B37/02 ,  H05B33/08

    CPC classification number: H05B33/083 ,  H05B33/0809 ,  H05B33/0821

    Abstract: Light emitting devices. A light emitting device including a power source; and a plurality of light emitting diode (LED) arrays coupled to the power source unit; and at least one delay unit. Each delay unit is coupled to a corresponding light emitting diode array of the light emitting diode arrays.

    Abstract translation: 发光装置。 一种发光装置，包括电源; 以及耦合到所述电源单元的多个发光二极管（LED）阵列; 和至少一个延迟单元。 每个延迟单元耦合到发光二极管阵列的对应的发光二极管阵列。

    Method of manufacturing light emitting device
    29.
    发明授权
    Method of manufacturing light emitting device 有权
    制造发光器件的方法

    公开(公告)号：US08828751B2

    公开(公告)日：2014-09-09

    申请号：US13844569

    申请日：2013-03-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Do Young Rhee ,  Tan Sakong ,  Ki Sung Kim ,  Suk Ho Yoon ,  Young Sun Kim ,  Sung Tae Kim

    IPC: H01L21/00 ,  H01L33/00 ,  H01L33/26

    CPC classification number: H01L33/005 ,  H01L33/26

    Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

    Abstract translation: 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

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