公开(公告)号：US09614121B1

公开(公告)日：2017-04-04

申请号：US15238047

申请日：2016-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Seok Choi ,  Chul Min Kim ,  Dong Gyu Shin ,  Ho Chul Lee ,  Joo Young Cheon ,  Do Young Rhee ,  Jeong Wook Lee

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L33/06

Abstract: A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature, and forming a second conductivity-type semiconductor layer.

公开(公告)号：US09252327B1

公开(公告)日：2016-02-02

申请号：US14698575

申请日：2015-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Min Kim ,  Tan Sakong ,  Suk Ho Yoon ,  Keon Hun Lee ,  Do Young Rhee ,  Sang Don Lee

IPC: H01L29/207 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46

CPC classification number: H01L33/145 ,  H01L25/167 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0872 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.

Abstract translation: 半导体发光器件可以包括：第一导电类型半导体层; 设置在所述第一导电类型半导体层上的有源层; 设置在有源层上的电子阻挡层; 设置在电子阻挡层上的第二导电类型半导体层; 以及设置在电子阻挡层和第二导电类型半导体层之间的空穴扩散层。 空穴扩散层可以包括具有不同能带隙和不同电阻水平的三层，三层中的至少一层可以含有Al。 所述Al的组成在所述至少一层中比在所述电子阻挡层中低。

公开(公告)号：US09698304B2

公开(公告)日：2017-07-04

申请号：US14979869

申请日：2015-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Min Kim ,  Tan Sakong ,  Suk Ho Yoon ,  Keon Hun Lee ,  Do Young Rhee ,  Sang Don Lee

IPC: H01L33/06 ,  H01L33/14 ,  H01L25/16 ,  H05B33/08 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L25/167 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0872 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

公开(公告)号：US08828751B2

公开(公告)日：2014-09-09

申请号：US13844569

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do Young Rhee ,  Tan Sakong ,  Ki Sung Kim ,  Suk Ho Yoon ,  Young Sun Kim ,  Sung Tae Kim

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/26

CPC classification number: H01L33/005 ,  H01L33/26

Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Abstract translation: 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。