公开(公告)号：US20230307551A1

公开(公告)日：2023-09-28

申请号：US18092973

申请日：2023-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwon YOO ,  Yongseok KIM ,  Min Tae RYU ,  Huije RYU ,  Yongjin LEE ,  Wonsok LEE ,  Min Hee CHO

IPC: H01L29/786 ,  H10B12/00 ,  H01L27/146 ,  H01L29/417

CPC classification number: H01L29/78693 ,  H01L27/10814 ,  H01L27/14616 ,  H01L29/41733 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, a source electrode in contact with a first sidewall of the channel layer, and a drain electrode in contact with a second sidewall of the channel layer. The second sidewall is opposite to the first sidewall. The channel layer includes a first channel pattern in contact with one of the source electrode and the drain electrode, and a second channel pattern between the first channel pattern and the gate electrode. The first channel pattern and the second channel pattern includes oxide semiconductor materials different from each other. A portion of the source electrode and a portion of the drain electrode overlap a portion of the gate electrode.

公开(公告)号：US20190241844A1

公开(公告)日：2019-08-08

申请号：US16250069

申请日：2019-01-17

Applicant: Samsung Electronics Co., Ltd. ,  SEMES Co., Ltd.

Inventor： Mi Hyun PARK ,  Jung-Min OH ,  Young-Hoo KIM ,  Hyo San LEE ,  Tae Keun KIM ,  Ye Rim YEON ,  Hae Rim OH ,  Ji Soo JEONG ,  Min Hee CHO

IPC: C11D11/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/10 ,  C11D17/00 ,  C11D1/14 ,  C11D3/20 ,  C11D3/34 ,  C11D3/32 ,  C11D3/28

CPC classification number: C11D11/0047 ,  B08B3/10 ,  C11D1/146 ,  C11D3/201 ,  C11D3/2017 ,  C11D3/2044 ,  C11D3/2096 ,  C11D3/28 ,  C11D3/32 ,  C11D3/3445 ,  C11D17/0008 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/68764

Abstract: A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.035.

公开(公告)号：US20170243973A1

公开(公告)日：2017-08-24

申请号：US15391888

申请日：2016-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsam LEE ,  Junsoo KIM ,  Hyoshin AHN ,  Satoru YAMADA ,  Joohyun JEON ,  MoonYoung JEONG ,  Chunhyung CHUNG ,  Min Hee CHO ,  Kyo-Suk CHAE ,  Eunae CHOI

IPC: H01L29/78 ,  H01L29/04 ,  H01L29/423

CPC classification number: H01L29/7827 ,  H01L28/00 ,  H01L29/045 ,  H01L29/4236

Abstract: A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.

公开(公告)号：US20170005100A1

公开(公告)日：2017-01-05

申请号：US15139444

申请日：2016-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Hee CHO ,  Satoru YAMADA ,  Sung-Sam LEE ,  Jung-Bun LEE

IPC: H01L27/108

CPC classification number: H01L27/10897 ,  H01L23/522 ,  H01L23/5226

Abstract: A semiconductor device may include a plurality of dummy wirings formed on a substrate at different vertical levels and electrically floated and a plurality of dummy contact plugs each electrically connected between two adjacent dummy wirings of the plurality of dummy wiring of the plurality of dummy wirings. No dummy wiring of the plurality of dummy wirings is electrically connected to a terminal of any one of a plurality of transistors included in the substrate.

Abstract translation: 半导体器件可以包括形成在不同垂直级别的基板上的电浮置的多个虚拟布线和多个虚拟接触插塞，每个虚拟接触插头电连接在多个虚拟布线中的多个虚拟布线的两个相邻的虚拟布线之间。 多个虚拟布线的虚拟布线不与基板中包含的多个晶体管中的任一个晶体管的端子电连接。