公开(公告)号：US20170243973A1

公开(公告)日：2017-08-24

申请号：US15391888

申请日：2016-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsam LEE ,  Junsoo KIM ,  Hyoshin AHN ,  Satoru YAMADA ,  Joohyun JEON ,  MoonYoung JEONG ,  Chunhyung CHUNG ,  Min Hee CHO ,  Kyo-Suk CHAE ,  Eunae CHOI

IPC: H01L29/78 ,  H01L29/04 ,  H01L29/423

CPC classification number: H01L29/7827 ,  H01L28/00 ,  H01L29/045 ,  H01L29/4236

Abstract: A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.