公开(公告)号：US12125785B2

公开(公告)日：2024-10-22

申请号：US17530206

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoo Shin ,  Jongmin Baek ,  Sanghoon Ahn ,  Woojin Lee ,  Junhyuk Lim

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/53214 ,  H01L23/53238 ,  H01L23/53257

Abstract: A semiconductor integrated circuit device includes a substrate; a transistor on the substrate; an interlayer insulating film on the transistor; an insulating liner on the interlayer insulating film; a first insulating film on the insulating liner; and a first wiring layer on the interlayer insulating film and surrounded by the insulating liner. A height of a top surface of the first insulating film in a vertical direction from a main surface of the interlayer insulating film is different than a height of a top surface of the first wiring layer in the vertical direction. A step exists between the top surfaces of the first wiring layer and the first insulating film. A height of the first insulating film is greater than a height of the first wiring layer. A width of the first wiring layer gradually narrows as the first wiring layer extends upwards along the vertical direction.

公开(公告)号：US12080595B2

公开(公告)日：2024-09-03

申请号：US17411467

申请日：2021-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Sanghoon Ahn ,  Woojin Lee ,  Kyung-Eun Byun ,  Junghoo Shin ,  Hyeonjin Shin ,  Yunseong Lee

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/7685 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/28562

Abstract: Provided is a method of forming an interconnect structure. The method includes preparing a substrate including a first metal layer and a first insulating layer, selectively forming a carbon layer having an sp2 bonding structure on the first metal layer, selectively forming a second insulating layer on the first insulating layer, forming a third insulating layer to cover the second insulating layer, and forming a second metal layer electrically connected to the first metal layer.

公开(公告)号：US12015073B2

公开(公告)日：2024-06-18

申请号：US17984877

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Lee ,  Kiyoung Lee ,  Yongsung Kim ,  Eunsun Kim

IPC: H01L29/51 ,  C01G23/00 ,  C01G35/00 ,  H10B51/00 ,  H10B53/00

CPC classification number: H01L29/516 ,  C01G23/006 ,  C01G35/006 ,  H10B51/00 ,  H10B53/00 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/77 ,  C01P2006/40

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US20240085812A1

公开(公告)日：2024-03-14

申请号：US18230472

申请日：2023-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyuhee Han ,  Koungmin Ryu ,  Kyeongbeom Park ,  Jongmin Baek ,  Wookyung You ,  Woojin Lee ,  Juhee Lee

IPC: G03F7/00 ,  G03F7/20 ,  G03F7/40 ,  H01L21/033

CPC classification number: G03F7/70925 ,  G03F7/2004 ,  G03F7/40 ,  H01L21/033

Abstract: A substrate processing apparatus includes a chamber having an internal space configured to process a substrate loaded therein; a light source configured to emit light on the substrate to harden a photoresist pattern coated on the substrate; and a transparent division part provided between the substrate and the light source, wherein the transparent division part divides the chamber into a first space, in which the light source is provided, and a second space, in which the substrate is provided.

公开(公告)号：US11862514B2

公开(公告)日：2024-01-02

申请号：US17984874

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghoon Ahn ,  Woojin Lee ,  Kyuhee Han

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H10B12/00 ,  H01L23/48 ,  H01L23/28

CPC classification number: H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5329 ,  H01L21/76895 ,  H01L23/28 ,  H01L23/48 ,  H10B12/482

Abstract: An integrated circuit device according to the inventive concepts includes lower wiring structures formed on a substrate, an air gap arranged between the lower wiring structures, a capping layer covering an upper surface of the air gap, an etch stop layer conformally covering an upper surfaces of the lower wiring structures and the capping layer and having a protrusion and recess structure, an insulating layer covering the etch stop layer, and an upper wiring structure penetrating the insulating layer and connected to the upper surface of the lower wiring structure not covered with the etch stop layer, wherein the upper wiring structure covers a portion of an upper surface of the capping layer, and a level of the upper surface of the capping layer is higher than a level of the upper surface of the lower wiring structures.

公开(公告)号：US11569128B2

公开(公告)日：2023-01-31

申请号：US17174409

申请日：2021-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woojin Lee ,  Hoon Seok Seo ,  Sanghoon Ahn ,  Kyu-Hee Han

IPC: H01L23/528 ,  H01L21/768

Abstract: A semiconductor device includes a substrate including an active pattern, a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer including a recess on an upper portion thereof, and a lower connection line in the first interlayer dielectric layer, the lower connection line being electrically connected to the active pattern, and the lower connection line including a conductive pattern, the recess of the first interlayer dielectric layer selectively exposing a top surface of the conductive pattern, and a barrier pattern between the conductive pattern and the first interlayer dielectric layer, the first interlayer dielectric layer covering a top surface of the barrier pattern.

公开(公告)号：US11532722B2

公开(公告)日：2022-12-20

申请号：US16779863

申请日：2020-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Lee ,  Kiyoung Lee ,  Yongsung Kim ,  Eunsun Kim

IPC: H01L29/51 ,  C01G23/00 ,  H01L27/11585 ,  H01L27/11502 ,  C01G35/00

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US20220238433A1

公开(公告)日：2022-07-28

申请号：US17453197

申请日：2021-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoo Shin ,  Sanghoon Ahn ,  Seung Jae Lee ,  Deokyoung Jung ,  Woojin Lee

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes a second insulating layer disposed on a substrate and that includes a first trench that extends in a first direction, a first via disposed in the first hole, a first interconnection layer disposed in the first trench on the first via and that has an upwardly upper region, and a third insulating layer disposed on the second insulating layer and that includes a second hole and a second trench connected to the second hole. The first trench has inclined side surfaces such that a width of the first trench increases in a direction toward the substrate, the second hole has inclined side surfaces such that a width of the second hole decreases in the direction toward the substrate, and a lower portion of the second hole is wider than an upper surface of the first interconnection layer.

公开(公告)号：US10546663B2

公开(公告)日：2020-01-28

申请号：US15296261

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Sungwoo Hwang ,  Se Yun Kim ,  Jong Wook Roh ,  Woojin Lee ,  Jongmin Lee ,  Doh Won Jung ,  Chan Kwak

IPC: H01B1/08 ,  G06F3/041

Abstract: An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet.

公开(公告)号：US09648738B2

公开(公告)日：2017-05-09

申请号：US15235363

申请日：2016-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doh Won Jung ,  Yoon Chul Son ,  Woojin Lee ,  Jongmin Lee

IPC: H05K1/00 ,  H05K1/02 ,  H05K1/09 ,  H05K3/22

CPC classification number: H05K1/09 ,  H05K1/028 ,  H05K1/0393 ,  H05K3/22 ,  H05K3/24 ,  H05K2201/0326 ,  H05K2201/0338 ,  H05K2203/0108 ,  H05K2203/0257 ,  H05K2203/1105

Abstract: An electrical conductor includes a first conductive layer including a plurality of metal oxide nanosheets, wherein a metal oxide nanosheet of the plurality of metal oxide nanosheets includes a proton bonded to a the surface of the metal oxide nanosheet, wherein the metal oxide is represented by Chemical Formula 1: MO2  Chemical Formula 1 wherein M is Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, or Mn, wherein the plurality of metal oxide nanosheets has a content of hydrogen atoms of less than about 100 atomic percent, with respect to 100 atomic percent of metal atoms as measured by Rutherford backscattering spectrometry, and wherein the plurality of metal oxide nanosheets includes an electrical connection between contacting metal oxide nanosheets.