公开(公告)号：US11048645B2

公开(公告)日：2021-06-29

申请号：US16103058

申请日：2018-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Young Lim ,  Dimin Niu ,  Jae-Gon Lee

IPC: G06F3/06 ,  G06F12/14 ,  G06F21/79 ,  G06F16/11 ,  G06F16/174 ,  G11C16/26 ,  G11C29/52 ,  G11C16/04 ,  G11C16/10 ,  G06F11/10

Abstract: A memory module includes a random access memory (RAM) device that includes a first storage region and a second storage region, a nonvolatile memory device, and a controller that controls the RAM device or the nonvolatile memory device under control of a host. The controller includes a data buffer that temporarily stores first data received from the host, and a buffer returning unit that transmits first release information to the host when the first data are moved from the data buffer to the first storage region or the second storage region of the RAM device and transmits second release information to the host when the first data are moved from the second storage region to the nonvolatile memory device.

公开(公告)号：US20190034344A1

公开(公告)日：2019-01-31

申请号：US16150366

申请日：2018-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Young Lim

IPC: G06F12/0877 ,  G11C8/08

Abstract: A method of accessing volatile memory devices, nonvolatile memory devices, and a controller controlling the volatile memory devices and the nonvolatile memory devices is provided. The method includes receiving, by the controller, a row address associated with the volatile memory devices and the nonvolatile memory devices through first lines at a first timing, receiving, by the controller, an extended address associated with the nonvolatile memory devices through second lines at a second timing, and receiving, by the controller, a column address associated with the nonvolatile memory devices and the volatile memory devices through third lines at a third timing.

公开(公告)号：US10078448B2

公开(公告)日：2018-09-18

申请号：US15196726

申请日：2016-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Young Lim ,  Taeksoo Kim ,  Indong Kim ,  Hangu Sohn

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G06F3/06 ,  G11C14/00 ,  G11C11/00

CPC classification number: G11C14/0018 ,  G06F12/0246 ,  G06F2212/1016 ,  G06F2212/7203 ,  G11C11/005 ,  G11C14/0063

Abstract: Electronic devices and memory management methods thereof are provided. Memory management methods may include setting page data of a nonvolatile memory as a read/write mode, copying the page data of the nonvolatile memory to a dynamic random access memory (DRAM) and setting the page data of the DRAM copied from the nonvolatile memory as a read only mode.

公开(公告)号：US09472305B2

公开(公告)日：2016-10-18

申请号：US14534492

申请日：2014-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Yeab Choo ,  Bu-Il Jung ,  Do-Geun Kim ,  Mi-Kyoung Park ,  Dong-Yang Lee ,  Sun-Young Lim ,  Ju-Yun Jung ,  Hyuk Han

IPC: G11C29/04 ,  G11C29/00

CPC classification number: G11C29/04 ,  G11C29/78 ,  G11C29/785 ,  G11C29/88

Abstract: A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, includes repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region, repairing the normal memory region by performing at least one of excluding second fault memory units from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units.

Abstract translation: 一种修复包括引导存储器区域，正常存储器区域和冗余存储器区域的存储器件的方法，所述冗余存储器区域包括多个修复存储器单元，包括通过执行以下操作中的至少一个修复引导存储器区域：排除第一 引导存储器区域的故障存储器单元用作存储，并且用修复存储器单元的引导修复存储器单元替换第一故障存储器单元，每个第一故障存储器单元具有至少一个故障存储器单元; 并且在修复引导存储器区域之后，通过执行排除第二故障存储器单元中的至少一个作为存储来修复正常存储器区域，并用修复存储器单元的正常修复存储器单元替换第二故障存储器单元。