公开(公告)号：US10078448B2

公开(公告)日：2018-09-18

申请号：US15196726

申请日：2016-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Young Lim ,  Taeksoo Kim ,  Indong Kim ,  Hangu Sohn

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G06F3/06 ,  G11C14/00 ,  G11C11/00

CPC classification number: G11C14/0018 ,  G06F12/0246 ,  G06F2212/1016 ,  G06F2212/7203 ,  G11C11/005 ,  G11C14/0063

Abstract: Electronic devices and memory management methods thereof are provided. Memory management methods may include setting page data of a nonvolatile memory as a read/write mode, copying the page data of the nonvolatile memory to a dynamic random access memory (DRAM) and setting the page data of the DRAM copied from the nonvolatile memory as a read only mode.